公开(公告)号：US11760771B2

公开(公告)日：2023-09-19

申请号：US16760171

申请日：2018-07-27

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Nana Okada ,  Masako Hatase

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285

CPC classification number: C07F15/0046 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/28568

Abstract: A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

公开(公告)号：US11555044B2

公开(公告)日：2023-01-17

申请号：US17281105

申请日：2019-09-24

Applicant: ADEKA CORPORATION

Inventor： Nana Okada ,  Tomoharu Yoshino ,  Atsushi Yamashita

IPC: C23C16/455 ,  C23C16/18 ,  C07F5/00

Abstract: The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A1 represents an alkanediyl group having 1 to 5 carbon atoms.

公开(公告)号：US11161867B2

公开(公告)日：2021-11-02

申请号：US16346724

申请日：2017-10-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Nana Okada ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.).

公开(公告)号：US12276022B2

公开(公告)日：2025-04-15

申请号：US18014371

申请日：2021-06-25

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Nana Okada ,  Ryota Fukushima

IPC: C23C16/455 ,  C23C16/18

Abstract: A method for producing a thin-film containing a metal atom or a semimetal atom on the surface of a substrate, comprising the steps of vaporizing a thin-film forming raw material comprising an alkoxide compound represented by the following general formula (1), introducing the vaporized compound into a treatment atmosphere, and subjecting the vaporized compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing a metal atom or a semimetal atom on the surface of the substrate: where R1 to R6, M and n are defined herein.

公开(公告)号：US11618762B2

公开(公告)日：2023-04-04

申请号：US17490227

申请日：2021-09-30

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Nana Okada ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.