公开(公告)号：WO2003083936A1

公开(公告)日：2003-10-09

申请号：PCT/US2002/040806

申请日：2002-12-20

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： WIECZOREK, Karsten ,  KAHLERT, Volker ,  HORSTMANN, Manfred

IPC: H01L21/768

CPC classification number: H01L21/28518 ,  H01L21/28052 ,  H01L21/76841 ,  H01L29/4933 ,  H01L29/665

Abstract: A layer stack (220) comprising at least three material layers (221, 222, and 223) is provided on a silicon-containing conductive region to form a silicide portion (208) on and in the silicon-containing conductive region, wherein the layer (221) next to the silicon provides the metal atoms for the silicide reaction, the intermediate layer (222) is a metal-nitrogen-compound formed by supplying a nitrogen containing as during deposition, and for formation of the top layer (223), supply for said gas is discontinued. The method may be carried out as an in situ method, thereby significantly improving throughput and deposition tool performance compared to typical prior art processes, in which at least two deposition chambers have to be used

Abstract translation: 包含至少三个材料层（221,222和223）的层叠体（220）设置在含硅导电区域上以在含硅导电区域上和之中形成硅化物部分（208），其中层 （221）提供了用于硅化物反应的金属原子，中间层（222）是通过在沉积期间提供含氮并形成顶层（223）而形成的金属氮化合物， 所述气体的供给被停止。 该方法可以作为原位方法进行，从而与典型的现有技术方法相比显着提高生产量和沉积工具性能，其中必须使用至少两个沉积室

公开(公告)号：WO2008066884A8

公开(公告)日：2008-06-05

申请号：PCT/US2007/024564

申请日：2007-11-29

Applicant: ADVANCED MICRO DEVICES, INC. ,  STRECK, Christof ,  KAHLERT, Volker

Inventor： STRECK, Christof ,  KAHLERT, Volker

IPC: H01L21/768

Abstract: A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material (210). A recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver (216), possibly encapsulated by rhodium (214), (217).

公开(公告)号：WO2008094669A1

公开(公告)日：2008-08-07

申请号：PCT/US2008/001316

申请日：2008-01-31

Applicant: ADVANCED MICRO DEVICES, INC. ,  STRECK, Christof ,  KAHLERT, Volker

Inventor： STRECK, Christof ,  KAHLERT, Volker

IPC: H01L21/768 ,  H01L21/314

CPC classification number: H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  H01L21/0228 ,  H01L21/318 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867

Abstract: By forming an aluminum nitride layer (106) by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.

Abstract translation: 通过自限制工艺顺序形成氮化铝层（106），可以显着提高铜基金属化层的界面特性，同时保持层堆叠的整体介电常数处于较低的水平。

公开(公告)号：WO2007053381A1

公开(公告)日：2007-05-10

申请号：PCT/US2006/041559

申请日：2006-10-23

Applicant: ADVANCED MICRO DEVICES, INC. ,  STRECK, Christof ,  KAHLERT, Volker ,  HANKE, Alexander

Inventor： STRECK, Christof ,  KAHLERT, Volker ,  HANKE, Alexander

IPC: H01L21/20 ,  H01L21/205

CPC classification number: H01L21/02532 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/0251

Abstract: By incorporating an atomic species of increased covalent radius, which may at least partially substitute germanium, a highly efficient strain mechanism may be provided, in which the risk of stress relief due to germanium conglomeration and lattice defects may be reduced. The atomic species of increased radius, such as tin, may be readily incorporated by epitaxial growth techniques on the basis of tin hydride.

Abstract translation: 通过掺入可以至少部分替代锗的增加的共价半径的原子种类，可以提供高效的应变机理，其中可能降低由于锗聚集和晶格缺陷引起的应力消除的风险。 增加半径的原子物质，如锡，可以通过基于氢化锡的外延生长技术容易地引入。

公开(公告)号：EP1490901A1

公开(公告)日：2004-12-29

申请号：EP02787066.6

申请日：2002-12-20

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： WIECZOREK, Karsten ,  KAHLERT, Volker ,  HORSTMANN, Manfred

IPC: H01L21/768

CPC classification number: H01L21/28518 ,  H01L21/28052 ,  H01L21/76841 ,  H01L29/4933 ,  H01L29/665

Abstract: A layer stack (220) comprising at least three material layers (221, 222, and 223) is provided on a silicon-containing conductive region to form a silicide portion (208) on and in the silicon-containing conductive region, wherein the layer (221) next to the silicon provides the metal atoms for the silicide reaction, the intermediate layer (222) is a metal-nitrogen-compound formed by supplying a nitrogen containing as during deposition, and for formation of the top layer (223), supply for said gas is discontinued. The method may be carried out as an in situ method, thereby significantly improving throughput and deposition tool performance compared to typical prior art processes, in which at least two deposition chambers have to be used