公开(公告)号：WO2003030230A1

公开(公告)日：2003-04-10

申请号：PCT/US2002/013578

申请日：2002-04-30

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： WU, Yider ,  KIM, UnSoon ,  SUN, Yu ,  YANG, Jean, Yee-Mei

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L27/11517

Abstract: A method for transferring a reduced lithographic image size pattern onto a film (14) on a substrate (12) is disclosed. A photosensitive material having an opening (20) of a minimum size achievable by the limits of lithography is transferred onto a mask layer (16) on a substrate (12) having a film (14) thereon. Reduction in the image size is achieved by establishing sidewalls (28) to the interior vertical surfaces (26) of the opening of the mask layer (16) by depositing a conformal layer (28), followed by anisotropic etching. The dimension of the opening (24) is reduced by the combined thickness of the two opposite sidewalls (28). An anisotropic etching of the film (14) transfers a pattern of openings (30) of a minimum size smaller than possible by lithography.

Abstract translation: 公开了一种将还原的平版印刷图像尺寸图案转印到基片（12）上的薄膜（14）上的方法。 具有通过光刻限制可实现的最小尺寸的开口（20）的感光材料被转印到其上具有膜（14）的基底（12）上的掩模层（16）上。 通过沉积保形层（28），然后进行各向异性蚀刻，通过将掩模层（16）的开口的内部垂直表面（26）建立侧壁（28）来实现图像尺寸的减小。 开口（24）的尺寸减小了两个相对侧壁（28）的组合厚度。 薄膜（14）的各向异性蚀刻通过光刻传递尺寸小于可能的最小尺寸的开口（30）图案。

公开(公告)号：WO2003058709A3

公开(公告)日：2003-07-17

申请号：PCT/US2002/039739

申请日：2002-12-11

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： KIM, UnSoon ,  SUN, Yu ,  KINOSHITA, Hiroyuki ,  CHANG, Kuo-Tung ,  SACHAR, Harpreet, K. ,  CHANG, Mark, S.

IPC: H01L21/762

Abstract: A method for performing shallow trench isolation during semiconductor fabrication that improves trench corner rounding is disclosed. The method includes etching trenches into a silicon substrate (24) between active regions, and performing a double liner oxidation process and on the trenches. The method further includes performing a double sacrificial oxidation process and on the active regions, wherein corners (35) of the trenches are substantially rounded by the four oxidation processes.

公开(公告)号：WO2003058709A2

公开(公告)日：2003-07-17

申请号：PCT/US2002/039739

申请日：2002-12-11

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： KIM, UnSoon ,  SUN, Yu ,  KINOSHITA, Hiroyuki ,  CHANG, Kuo-Tung ,  SACHAR, Harpreet, K. ,  CHANG, Mark, S.

IPC: H01L21/762

CPC classification number: H01L21/76235

Abstract: A method for performing shallow trench isolation during semiconductor fabrication that improves trench corner rounding is disclosed. The method includes etching trenches (34) into a silicon substrate (24) between active regions (30), and performing a double liner oxidation process (56) and (60) on the trenches (34). The method further includes performing a double sacrificial oxidation process (72) and (76) on the active regions (30), wherein corners (35) of the trenches (34) are substantially rounded by the four oxidation processes.

Abstract translation: 公开了一种用于在半导体制造期间进行浅沟槽隔离的方法，其改善沟槽角圆化。 该方法包括将沟槽（34）蚀刻到有源区域（30）之间的硅衬底（24）中，并且在沟槽（34）上执行双衬层氧化工艺（56）和（60）。 该方法还包括在有源区域（30）上执行双重牺牲氧化工艺（72）和（76），其中沟槽（34）的拐角（35）通过四个氧化工艺基本上被圆化。

公开(公告)号：EP1459374A2

公开(公告)日：2004-09-22

申请号：EP02806155.4

申请日：2002-12-11

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： KIM, UnSoon ,  SUN, Yu ,  KINOSHITA, Hiroyuki ,  CHANG, Kuo-Tung ,  SACHAR, Harpreet, K. ,  CHANG, Mark, S.

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/316

CPC classification number: H01L21/76235

Abstract: A method for performing shallow trench isolation during semiconductor fabrication that improves trench corner rounding is disclosed. The method includes etching trenches into a silicon substrate (24) between active regions, and performing a double liner oxidation process and on the trenches. The method further includes performing a double sacrificial oxidation process and on the active regions, wherein corners (35) of the trenches are substantially rounded by the four oxidation processes.