公开(公告)号：WO1996017376A1

公开(公告)日：1996-06-06

申请号：PCT/US1995015260

申请日：1995-11-22

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  PRAMANICK, Shekhar ,  LUNING, Scott ,  FEWKES, Jonathan

IPC: H01L21/027

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/32137

Abstract: A structure for patterning a polysilicon layer includes a TiN layer located above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is located above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.

Abstract translation: 用于图案化多晶硅层的结构包括位于形成TiN / a-Si叠层的非晶硅（a-Si）层之上的TiN层。 TiN / a-Si堆叠位于多晶硅层的上方。 TiN层用作ARC以减少用于图案化多晶硅层的光致抗蚀剂的过度曝光，而a-Si层防止多晶硅层下面的层被污染。

公开(公告)号：EP0795199B1

公开(公告)日：2005-11-09

申请号：EP95942471.4

申请日：1995-11-22

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： PRAMANICK, Shekhar ,  LUNING, Scott ,  FEWKES, Jonathan

IPC: H01L21/027 ,  H01L21/321

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/32137

Abstract: A structure for patterning a polysilicon layer includes a TiN layer located above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is located above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.

公开(公告)号：EP0795199A1

公开(公告)日：1997-09-17

申请号：EP95942471.0

申请日：1995-11-22

Applicant: ADVANCED MICRO DEVICES INC.

Inventor： PRAMANICK, Shekhar ,  LUNING, Scott ,  FEWKES, Jonathan

IPC: G03F7 ,  H01L21

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/32137

Abstract: A structure for patterning a polysilicon layer includes a TiN layer located above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is located above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.