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    ZIRCONIUM-DOPED BST MATERIALS AND MOCVD PROCESS FOR FORMING SAME
    2.
    发明申请
    ZIRCONIUM-DOPED BST MATERIALS AND MOCVD PROCESS FOR FORMING SAME 审中-公开
    ZIRCONIUM-DOPED BST材料和MOCVD工艺形成

    公开(公告)号：WO0245128A2

    公开(公告)日：2002-06-06

    申请号：PCT/US0143984

    申请日：2001-11-14

    Applicant: ADVANCED TECH MATERIALS ,  STAUF GREGORY T ,  CHEN PHILIP S ,  ROEDER JEFFREY F

    Inventor： STAUF GREGORY T ,  CHEN PHILIP S ,  ROEDER JEFFREY F

    IPC: C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L

    CPC classification number: C23C16/409 ,  H01L21/31691

    Abstract: A Zr-doped (Ba,Sr)TiO3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1x10 A/cm under applied voltage of about +/-3V or above and at temperature of about 100 DEG C or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd)2-polyamine, Sr(thd)2-polyamine, Zr(thd)4, and Ti(OiPr)2(thd)2 at a deposition temperature inthe range from about 560 DEG C to 700 DEG C.

    Abstract translation: Zr掺杂（Ba，Sr）TiO3钙钛矿晶体材料介电薄膜。 这种介电薄膜的特征在于以下特征中的至少一个：（a）击穿强度至少为1.3MV / cm; （b）在大约+/- 3V或以上的施加电压和约100℃或更高的温度下的泄漏电流不大于1×10 -3 A / cm 2; 和（c）至少15J / cc的储能密度。 电介质薄膜包含Zr掺杂（Ba，Sr）TiO 3钙钛矿晶体材料的总重量的0.5〜50％的锆掺杂剂，优选2-15％，更优选4％〜14％，最多 优选5％至12％。 通过使用金属前体Ba（thd）2-多胺，Sr（thd）2 - 多胺，Zr（thd）4和Ti（OiPr）2（thd）2的MOCVD法沉积这种电介质薄膜， 沉积温度在约560℃至700℃的范围内。

    Zirconium-doped bst materials and mocvd process for forming same
    3.
    发明专利
    Zirconium-doped bst materials and mocvd process for forming same 未知

    公开(公告)号：AU2572802A

    公开(公告)日：2002-06-11

    申请号：AU2572802

    申请日：2001-11-14

    Applicant: ADVANCED TECH MATERIALS

    Inventor： STAUF GREGORY T ,  CHEN PHILIP S ,  ROEDER JEFFREY F

    IPC: C23C16/40 ,  H01L21/314 ,  H01L21/316

    Abstract: A Zr-doped (Ba,Sr)TiO3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1x10-3 A/cm2 under applied voltage of about ±3V or above and at temperature of about 100° C. or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd)2-polyamine, Sr(thd)2-polyamine, Zr(thd)4, and Ti(OiPr)2(thd)2 at a deposition temperature in the range from about 560° C. to 700° C.

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