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    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    2.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    半导体加工系统的清洁

    公开(公告)号：WO2007127865A3

    公开(公告)日：2008-12-11

    申请号：PCT/US2007067542

    申请日：2007-04-26

    Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    IPC: C25F1/00 ,  C25F3/12

    CPC classification number: C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    Abstract translation: 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    ZIRCONIUM-DOPED BST MATERIALS AND MOCVD PROCESS FOR FORMING SAME
    6.
    发明申请
    ZIRCONIUM-DOPED BST MATERIALS AND MOCVD PROCESS FOR FORMING SAME 审中-公开
    ZIRCONIUM-DOPED BST材料和MOCVD工艺形成

    公开(公告)号：WO0245128A2

    公开(公告)日：2002-06-06

    申请号：PCT/US0143984

    申请日：2001-11-14

    Applicant: ADVANCED TECH MATERIALS ,  STAUF GREGORY T ,  CHEN PHILIP S ,  ROEDER JEFFREY F

    Inventor： STAUF GREGORY T ,  CHEN PHILIP S ,  ROEDER JEFFREY F

    IPC: C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L

    CPC classification number: C23C16/409 ,  H01L21/31691

    Abstract: A Zr-doped (Ba,Sr)TiO3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1x10 A/cm under applied voltage of about +/-3V or above and at temperature of about 100 DEG C or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd)2-polyamine, Sr(thd)2-polyamine, Zr(thd)4, and Ti(OiPr)2(thd)2 at a deposition temperature inthe range from about 560 DEG C to 700 DEG C.

    Abstract translation: Zr掺杂（Ba，Sr）TiO3钙钛矿晶体材料介电薄膜。 这种介电薄膜的特征在于以下特征中的至少一个：（a）击穿强度至少为1.3MV / cm; （b）在大约+/- 3V或以上的施加电压和约100℃或更高的温度下的泄漏电流不大于1×10 -3 A / cm 2; 和（c）至少15J / cc的储能密度。 电介质薄膜包含Zr掺杂（Ba，Sr）TiO 3钙钛矿晶体材料的总重量的0.5〜50％的锆掺杂剂，优选2-15％，更优选4％〜14％，最多 优选5％至12％。 通过使用金属前体Ba（thd）2-多胺，Sr（thd）2 - 多胺，Zr（thd）4和Ti（OiPr）2（thd）2的MOCVD法沉积这种电介质薄膜， 沉积温度在约560℃至700℃的范围内。

    Zirconium-doped bst materials and mocvd process for forming same
    8.
    发明专利
    Zirconium-doped bst materials and mocvd process for forming same 未知

    公开(公告)号：AU2572802A

    公开(公告)日：2002-06-11

    申请号：AU2572802

    申请日：2001-11-14

    Applicant: ADVANCED TECH MATERIALS

    Inventor： STAUF GREGORY T ,  CHEN PHILIP S ,  ROEDER JEFFREY F

    IPC: C23C16/40 ,  H01L21/314 ,  H01L21/316

    Abstract: A Zr-doped (Ba,Sr)TiO3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1x10-3 A/cm2 under applied voltage of about ±3V or above and at temperature of about 100° C. or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd)2-polyamine, Sr(thd)2-polyamine, Zr(thd)4, and Ti(OiPr)2(thd)2 at a deposition temperature in the range from about 560° C. to 700° C.

    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    9.
    发明专利
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 未知

    公开(公告)号：SG171606A1

    公开(公告)日：2011-06-29

    申请号：SG2011029022

    申请日：2007-04-26

    Applicant: ADVANCED TECH MATERIALS

    Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas- phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, C12, HC1, C1F3, C102, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COC12, CC14, CHC13, CH2C12 and CH3C1.

    HIGH-K PEROVSKITE MATERIAL AND METHODS OF MAKING AND USING THE SAME
    10.
    发明申请
    HIGH-K PEROVSKITE MATERIAL AND METHODS OF MAKING AND USING THE SAME 审中-公开
    高K薄膜材料及其制造方法和使用方法

    公开(公告)号：WO2012177642A2

    公开(公告)日：2012-12-27

    申请号：PCT/US2012043153

    申请日：2012-06-19

    Applicant: ADVANCED TECH MATERIALS ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

    Inventor： HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

    IPC: H01L21/31 ,  H01L21/205

    CPC classification number: H01L28/55 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/0228 ,  H01L27/108

    Abstract: High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material- forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.

    Abstract translation: 高k材料和器件，例如DRAM电容器，以及制造和使用它们的方法。 描述了形成钙钛矿薄膜的各种方法，包括其中通过脉冲气相沉积工艺将钙钛矿材料沉积在基底上的方法，包括使基底与形成钙钛矿的金属前体接触。 在一种这样的方法中，该方法通过钙钛矿材料的掺杂或合金化与在形成钙钛矿材料的金属前体中的金属物质具有更高的迁移率和/或更高的挥发性金属物质进行。 在另一种方法中，将钙钛矿材料暴露于升高的温度足够的时间以结晶或增强钙钛矿材料的结晶，随后在脉冲气相沉积条件下生长钙钛矿材料。 描述了各种钙钛矿组合物，包括：（Sr，Pb）TiO 3; SrRuO3或SrTiO3，掺杂Zn，Cd或Hg; SR（锡，钌）O3; 和Sr（Sn，Ti）O 3。

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