公开(公告)号：WO0128917A9

公开(公告)日：2002-08-08

申请号：PCT/US0028846

申请日：2000-10-18

Applicant: ADVANCED TECH MATERIALS

Inventor： HOLST MARK ,  DUBOIS RAY ,  ARNO JOSE ,  FALLER REBECCA ,  TOM GLENN

IPC: B01D53/64 ,  B01D53/04 ,  B01J20/08 ,  B01J20/10 ,  B01J20/20 ,  B01J20/34 ,  C23C16/18 ,  C23C16/44 ,  C01B7/00 ,  B01D47/00 ,  C01C3/00

CPC classification number: B01D53/04 ,  B01D53/0446 ,  B01D53/06 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2256/26 ,  B01D2257/706 ,  B01D2258/0216 ,  B01D2259/40096 ,  B01D2259/40098 ,  C23C16/18 ,  C23C16/4412

Abstract: A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to an organic or organometallic molecule such that upon exposure to heat (36) such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate (32) by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition (16) for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent (14).

Abstract translation: 一种使用具有松散地结合有机或有机金属分子的金属有机物的源试剂从CVD工艺中消除流出物的方法和装置，使得在暴露于热（36）时，这种结合易于切割，例如涉及 通过利用用于这种成膜的前体组合物（16）的金属有机化学气相沉积（CVD）在衬底（32）上形成膜。 在具体实施方案中的减排方法有利于利用Cu（hfac）TMVS作为铜源试剂（14）从铜沉积过程中高效地减少废水。

公开(公告)号：WO0129281A9

公开(公告)日：2001-09-27

申请号：PCT/US0041253

申请日：2000-10-18

Applicant: ADVANCED TECH MATERIALS

Inventor： HOLST MARK ,  FALLER REBECCA ,  DUBOIS RAY ,  ARNO JOSE

IPC: B01D53/72 ,  B01D53/04 ,  B01D53/34 ,  B01D53/64 ,  B01J20/08 ,  B01J20/10 ,  B01J20/18 ,  B01J20/20 ,  B01J20/26 ,  B01J20/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/56

CPC classification number: B01D53/02 ,  B01D53/04 ,  B01D53/64 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2258/0216 ,  C23C16/409 ,  C23C16/4412

Abstract: Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products for the effluent. An endpoint detector (62) such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

Abstract translation: 用于使用金属源试剂液体溶液沉积的多组分金属氧化物排出的流出物的装置和方法，所述金属源试剂液体溶液包含至少一种金属配位络合物，所述金属配位络合物包括与稳定络合物中的至少一个配位体配位结合的金属， 用于该金属配位络合物的溶剂介质，例如用于在基底上形成钛酸钡锶（BST）薄膜的金属有机化学气相沉积（MOCVD）工艺。 废水被吸附处理以除去流出物的前体物质和MOCVD过程副产物。 可以使用诸如石英微量天平检测器的端点检测器（62）来检测吸附处理单元中的初始突破条件。

公开(公告)号：AU2114301A

公开(公告)日：2001-04-30

申请号：AU2114301

申请日：2000-10-18

Applicant: ADVANCED TECH MATERIALS

Inventor： HOLST MARK ,  FALLER REBECCA ,  DUBOIS RAY ,  ARNO JOSE

IPC: B01D53/72 ,  B01D53/04 ,  B01D53/34 ,  B01D53/64 ,  B01J20/08 ,  B01J20/10 ,  B01J20/18 ,  B01J20/20 ,  B01J20/26 ,  B01J20/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/56

Abstract: Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products from the effluent. An endpoint detector such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

公开(公告)号：AU1788701A

公开(公告)日：2001-06-04

申请号：AU1788701

申请日：2000-11-22

Applicant: ADVANCED TECH MATERIALS

Inventor： FALLER REBECCA ,  HOLST MARK

IPC: B01D53/46 ,  B01D53/04 ,  B01D53/34 ,  C23C16/44 ,  B01J19/12 ,  B01J19/02 ,  B01D53/00 ,  B01D53/22 ,  A62D3/00

Abstract: An effluent abatement system for abating hydride species in a hydride-containing effluent, arranged for carrying out the steps of: (1) contacting the hydride-containing effluent with a dry scrubber material comprising a metal oxide that is reactive with the hydride species to remove the hydride species from the effluent, until the capacity of the dry scrubber material for hydride species is at least partially exhausted; and (2) contacting the at least partially exhausted capacity dry scrubber material with an oxidant to at least partially regain the capacity of the dry scrubber material for the hydride species. The system of the invention has particular utility in the treatment of effluent from III-V compound semiconductor manufacturing operations.

公开(公告)号：EP1230420A4

公开(公告)日：2006-02-01

申请号：EP00984541

申请日：2000-10-18

Applicant: ADVANCED TECH MATERIALS

Inventor： HOLST MARK ,  FALLER REBECCA ,  DUBOIS RAY ,  ARNO JOSE

IPC: B01D53/72 ,  B01D53/04 ,  B01D53/34 ,  B01D53/64 ,  B01J20/08 ,  B01J20/10 ,  B01J20/18 ,  B01J20/20 ,  B01J20/26 ,  B01J20/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/56

CPC classification number: B01D53/02 ,  B01D53/04 ,  B01D53/64 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2258/0216 ,  C23C16/409 ,  C23C16/4412

Abstract: Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products for the effluent. An endpoint detector (62) such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

公开(公告)号：EP1246694A4

公开(公告)日：2003-07-02

申请号：EP00980656

申请日：2000-11-22

Applicant: ADVANCED TECH MATERIALS

Inventor： FALLER REBECCA ,  HOLST MARK

IPC: B01D53/46 ,  B01D53/04 ,  B01D53/34 ,  C23C16/44 ,  B01D53/86

CPC classification number: B01D53/02 ,  B01D53/04 ,  B01D2253/112 ,  B01D2258/0216 ,  B01D2259/402

Abstract: Effluent abating system (10) for abating hydride species in a hydride-containing effluent, arranged for carrying out the steps of: contacting the hydride-containing effluent with a dry scrubber material comprising a metal oxide that is reactive with hydride species to remove the hydride species from the effluent, until the capacity of the dry scrubber material for hydride species is at least partially exhausted: and contacting the at least partially exhausted capacity dry scrubber material with an oxidant to at least partially regain the capacity of the dry scrubber material for the hydride species. The system of the invention has particular utility in the treatment of effluent from III-V compound semiconductor manufacturing operations from the manufacturing plant (36).