公开(公告)号：WO2004075262A3

公开(公告)日：2006-04-13

申请号：PCT/US2004004733

申请日：2004-02-17

Applicant: ADVANCED TECH MATERIALS ,  MARGANSKI PAUL J ,  SHREVE THEODORE A ,  SWEENEY JOSEPH ,  OLANDER KARL W ,  ARNO JOSE ,  HOLST MARK

Inventor： MARGANSKI PAUL J ,  SHREVE THEODORE A ,  SWEENEY JOSEPH ,  OLANDER KARL W ,  ARNO JOSE ,  HOLST MARK

IPC: B01D53/04 ,  B01D53/68 ,  B01D53/70

CPC classification number: B01D53/0415 ,  B01D53/0446 ,  B01D53/685 ,  B01D53/70 ,  B01D2253/10 ,  B01D2253/102 ,  B01D2253/112 ,  B01D2256/26 ,  B01D2258/0216

Abstract: An apparatus and method are provided for treating pollutants in a process effluent stream. The apparatus comprises an up-flow canister having a lower section plenum space (22), a section for a sorbent bed material (18), an upper section plenum space (24), and inlet (20) for introducing a process effluent stream to the lower section plenum space, and an outlet (26) for egress of the process effluent stream from the canister, the inlet, lower section plenum space, and sorbent bed material being arranged in a manner which provides for process effluent stream to flow into the sorbent bed against gravity, by a pressure differential.

Abstract translation: 提供了一种用于处理工艺流出物流中的污染物的装置和方法。 该装置包括具有下段增压空间（22），用于吸附剂床材料（18）的部分，上段增压空间（24）和用于将工艺流出物流引入的入口（20）的上流式罐 所述下段增压空间和用于从所述罐，所述入口，下部区域空间和吸附剂床材料排出的所述工艺流出物流的出口（26）以提供流程流出物流的方式布置 吸附剂床反对重力，通过压差。

公开(公告)号：WO0128917A9

公开(公告)日：2002-08-08

申请号：PCT/US0028846

申请日：2000-10-18

Applicant: ADVANCED TECH MATERIALS

Inventor： HOLST MARK ,  DUBOIS RAY ,  ARNO JOSE ,  FALLER REBECCA ,  TOM GLENN

IPC: B01D53/64 ,  B01D53/04 ,  B01J20/08 ,  B01J20/10 ,  B01J20/20 ,  B01J20/34 ,  C23C16/18 ,  C23C16/44 ,  C01B7/00 ,  B01D47/00 ,  C01C3/00

CPC classification number: B01D53/04 ,  B01D53/0446 ,  B01D53/06 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2256/26 ,  B01D2257/706 ,  B01D2258/0216 ,  B01D2259/40096 ,  B01D2259/40098 ,  C23C16/18 ,  C23C16/4412

Abstract: A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to an organic or organometallic molecule such that upon exposure to heat (36) such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate (32) by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition (16) for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent (14).

Abstract translation: 一种使用具有松散地结合有机或有机金属分子的金属有机物的源试剂从CVD工艺中消除流出物的方法和装置，使得在暴露于热（36）时，这种结合易于切割，例如涉及 通过利用用于这种成膜的前体组合物（16）的金属有机化学气相沉积（CVD）在衬底（32）上形成膜。 在具体实施方案中的减排方法有利于利用Cu（hfac）TMVS作为铜源试剂（14）从铜沉积过程中高效地减少废水。

公开(公告)号：WO02058858A9

公开(公告)日：2002-12-27

申请号：PCT/US0150913

申请日：2001-11-07

Applicant: ADVANCED TECH MATERIALS ,  ARNO JOSE ,  WANG LUPING ,  TOM GLENN M

Inventor： ARNO JOSE ,  WANG LUPING ,  TOM GLENN M

IPC: C23C16/44 ,  F17C1/00 ,  F17C7/00 ,  F17C11/00 ,  F17C13/02 ,  F17C13/04 ,  B08B9/08

CPC classification number: F17C1/00 ,  C23C16/4405 ,  F17C7/00 ,  F17C11/00 ,  F17C13/02 ,  F17C13/025 ,  F17C13/04 ,  F17C2201/0119 ,  F17C2201/056 ,  F17C2201/058 ,  F17C2203/0617 ,  F17C2205/0323 ,  F17C2205/0329 ,  F17C2205/0338 ,  F17C2205/0341 ,  F17C2205/0391 ,  F17C2221/01 ,  F17C2223/0153 ,  F17C2223/036 ,  F17C2225/0123 ,  F17C2225/033 ,  F17C2260/044 ,  F17C2265/017 ,  F17C2270/05

Abstract: An improved, non-plasma, static method for removing accumulated films and solid residues from interior surfaces of processing chambers used in thermal or plasma CVD treatment processes. The method includes introducing a reactive substance into a processing chamber while adjusting the pressure within the processing chamber to a predetermined level. The flow of the reactive substance into the processing chamber is terminated and the reactive substance is retained in the processing chamber to react with solid residues and form reaction products, following which the reaction products are subsequently removed from the processing chamber. Advantageously, terminating the flow of reactive substance into the processing chamber results in etching action that more effectively utilizes the cleaning agent and generates less hazardous materials.

Abstract translation: 一种用于从热处理室或等离子体CVD处理工艺中使用的处理室的内表面去除积聚的膜和固体残余物的改进的非等离子体静态方法。 该方法包括将反应物质引入处理室，同时将处理室内的压力调节至预定水平。 终止反应物质流入处理室，反应物质保留在处理室中，与固体残留物反应形成反应产物，随后将反应产物从处理室中除去。 有利地，终止反应物质流入处理室中导致蚀刻作用，其更有效地利用清洁剂并产生较少危险的材料。

公开(公告)号：WO2004010462A3

公开(公告)日：2004-11-25

申请号：PCT/US0313937

申请日：2003-05-05

Applicant: ADVANCED TECH MATERIALS

Inventor： ARNO JOSE

IPC: C23C16/52 ,  G01N21/35 ,  H01L21/00 ,  H01L21/205

CPC classification number: G01N21/3504 ,  G01J5/0007 ,  G01J5/0014 ,  G01J5/025 ,  G01J5/12 ,  H01L21/67253 ,  Y10T483/16

Abstract: A thermopile-based detector (20) for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.

Abstract translation: 用于监测和/或控制半导体工艺的基于热电堆的检测器（20），以及使用基于热电堆的感测条件和/或影响这些工艺的半导体工艺的监控和/或控制方法。

公开(公告)号：WO0129281A9

公开(公告)日：2001-09-27

申请号：PCT/US0041253

申请日：2000-10-18

Applicant: ADVANCED TECH MATERIALS

Inventor： HOLST MARK ,  FALLER REBECCA ,  DUBOIS RAY ,  ARNO JOSE

IPC: B01D53/72 ,  B01D53/04 ,  B01D53/34 ,  B01D53/64 ,  B01J20/08 ,  B01J20/10 ,  B01J20/18 ,  B01J20/20 ,  B01J20/26 ,  B01J20/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/56

CPC classification number: B01D53/02 ,  B01D53/04 ,  B01D53/64 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/108 ,  B01D2258/0216 ,  C23C16/409 ,  C23C16/4412

Abstract: Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products for the effluent. An endpoint detector (62) such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

Abstract translation: 用于使用金属源试剂液体溶液沉积的多组分金属氧化物排出的流出物的装置和方法，所述金属源试剂液体溶液包含至少一种金属配位络合物，所述金属配位络合物包括与稳定络合物中的至少一个配位体配位结合的金属， 用于该金属配位络合物的溶剂介质，例如用于在基底上形成钛酸钡锶（BST）薄膜的金属有机化学气相沉积（MOCVD）工艺。 废水被吸附处理以除去流出物的前体物质和MOCVD过程副产物。 可以使用诸如石英微量天平检测器的端点检测器（62）来检测吸附处理单元中的初始突破条件。

公开(公告)号：AU2003276827A1

公开(公告)日：2004-02-09

申请号：AU2003276827

申请日：2003-05-05

Applicant: ADVANCED TECH MATERIALS

Inventor： ARNO JOSE

IPC: C23C16/52 ,  G01N21/35 ,  H01L21/00 ,  H01L21/205

Abstract: The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. In one embodiment, an infrared light beam is transmitted through a linear transmission path from an infrared light source through a sampling region containing material of interest into the thermopile detector. The linear transmission path reduces the risk of signal loss during transmission of the infrared light. The transmission path of the infrared light may comprise a highly smooth and reflective inner surface for minimizing such signal loss during transmission.

公开(公告)号：MY131132A

公开(公告)日：2007-07-31

申请号：MYPI20034080

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： ARNO JOSE ,  STURM EDWARD ,  WANG LUPING ,  DIETZ JAMES

IPC: B01D53/04

Abstract: A GERMANE STORAGE AND DISPENSING SYSTEM (110), IN WHICH GERMANE GAS IS SORPTIVELY RETAINED ON AN ACTIVATED CARBON SORBENT MEDIUM (116) IN A VESSEL (112) CONTAINING ADSORBED AND FREE GERMANE GAS. THE ACTIVATED CARBON SORBENT MEDIUM IS DEFLAGRATION-RESISTANT IN RELATION TO THE GERMANE GAS ADSORBED THEREON, I.E., UNDER DEFLAGRATION CONDITIONS OF 65° C. AND 650 TORR, UNDER WHICH FREE GERMANE GAS UNDERGOES DEFLAGRATION, THE ACTIVATED CARBON SORBENT MEDIUM DOES NOT SUSTAIN DEFLAGRATION OF THE ADSORBED GERMANE GAS OR THERMALLY DESORB THE GERMANE GAS SO THAT IT UNDERGOES SUBSEQUENT DEFLAGRATION. THE DEFLAGRATION-RESISTANCE OF THE ACTIVATED CARBON SORBENT MEDIUM IS PROMOTED BY PRE-TREATMENT OF THE SORBENT MATERIAL TO REMOVE EXTRANEOUS SORBABLES THEREFROM AND BY MAINTAINING THE FILL LEVEL OF THE SORBENT MEDIUM IN THE GAS STORAGE AND DISPENSING VESSEL AT A SUBSTANTIAL VALUE, E.G., OF AT LEAST 30%.(FIG 5)

公开(公告)号：AU2003276827A8

公开(公告)日：2004-02-09

申请号：AU2003276827

申请日：2003-05-05

Applicant: ADVANCED TECH MATERIALS

Inventor： ARNO JOSE

IPC: C23C16/52 ,  G01N21/35 ,  H01L21/00 ,  H01L21/205

Abstract: The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. In one embodiment, an infrared light beam is transmitted through a linear transmission path from an infrared light source through a sampling region containing material of interest into the thermopile detector. The linear transmission path reduces the risk of signal loss during transmission of the infrared light. The transmission path of the infrared light may comprise a highly smooth and reflective inner surface for minimizing such signal loss during transmission.

公开(公告)号：AU2114301A

公开(公告)日：2001-04-30

申请号：AU2114301

申请日：2000-10-18

Applicant: ADVANCED TECH MATERIALS

Inventor： HOLST MARK ,  FALLER REBECCA ,  DUBOIS RAY ,  ARNO JOSE

IPC: B01D53/72 ,  B01D53/04 ,  B01D53/34 ,  B01D53/64 ,  B01J20/08 ,  B01J20/10 ,  B01J20/18 ,  B01J20/20 ,  B01J20/26 ,  B01J20/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/56

Abstract: Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products from the effluent. An endpoint detector such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

公开(公告)号：EP1502289A4

公开(公告)日：2010-01-20

申请号：EP03765426

申请日：2003-05-05

Applicant: ADVANCED TECH MATERIALS

Inventor： ARNO JOSE

IPC: C23C16/52 ,  G01N21/35 ,  H01L21/00 ,  H01L21/205 ,  G01J3/42 ,  H01L21/66

CPC classification number: G01N21/3504 ,  G01J5/0007 ,  G01J5/0014 ,  G01J5/025 ,  G01J5/12 ,  H01L21/67253 ,  Y10T483/16