公开(公告)号：WO2012009639A3

公开(公告)日：2012-04-26

申请号：PCT/US2011044191

申请日：2011-07-15

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

Inventor： BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

IPC: H01L21/302 ,  H01L21/28

CPC classification number: C11D11/0041 ,  C11D3/042 ,  G03F7/42 ,  H01L21/02063 ,  H01L21/02071

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Abstract translation: 用于从其上具有所述残余物的微电子器件清洁后等离子体蚀刻残留物的清洁组合物和方法。 该组合物可实现对来自微电子器件的残余物质（包括含钛，含铜，含钨和/或含钴）蚀刻后残留物的高效清洁，同时不损坏层间电介质，金属互连材料， 和/或也存在于其上的封盖层。

公开(公告)号：WO2012009639A2

公开(公告)日：2012-01-19

申请号：PCT/US2011044191

申请日：2011-07-15

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

Inventor： BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

IPC: H01L21/302 ,  H01L21/28

CPC classification number: C11D11/0041 ,  C11D3/042 ,  G03F7/42 ,  H01L21/02063 ,  H01L21/02071

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

公开(公告)号：SG187551A1

公开(公告)日：2013-03-28

申请号：SG2013003736

申请日：2011-07-15

Applicant: ADVANCED TECH MATERIALS

Inventor： BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

公开(公告)号：SG11201403556WA

公开(公告)日：2014-07-30

申请号：SG11201403556W

申请日：2012-12-27

Applicant: ADVANCED TECH MATERIALS

Inventor： BARNES JEFFREY A ,  COOPER EMANUEL I ,  CHEN LI-MIN ,  LIPPY STEVEN ,  RAJARAM REKHA ,  TU SHENG-HUNG

IPC: H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.