公开(公告)号：WO2012009639A3

公开(公告)日：2012-04-26

申请号：PCT/US2011044191

申请日：2011-07-15

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

Inventor： BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

IPC: H01L21/302 ,  H01L21/28

CPC classification number: C11D11/0041 ,  C11D3/042 ,  G03F7/42 ,  H01L21/02063 ,  H01L21/02071

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Abstract translation: 用于从其上具有所述残余物的微电子器件清洁后等离子体蚀刻残留物的清洁组合物和方法。 该组合物可实现对来自微电子器件的残余物质（包括含钛，含铜，含钨和/或含钴）蚀刻后残留物的高效清洁，同时不损坏层间电介质，金属互连材料， 和/或也存在于其上的封盖层。

公开(公告)号：WO2012048079A2

公开(公告)日：2012-04-12

申请号：PCT/US2011055049

申请日：2011-10-06

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

Inventor： CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

IPC: C23F1/02 ,  C23F1/44

CPC classification number: H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

Abstract translation: 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地移除第一金属栅极材料（例如，氮化钛）的移除组合物和工艺。 去除组合物可以包括氟化物或者可选地基本上不含氟化物。 衬底优选地包括高k /金属栅集成方案。

公开(公告)号：WO2012009639A2

公开(公告)日：2012-01-19

申请号：PCT/US2011044191

申请日：2011-07-15

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

Inventor： BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

IPC: H01L21/302 ,  H01L21/28

CPC classification number: C11D11/0041 ,  C11D3/042 ,  G03F7/42 ,  H01L21/02063 ,  H01L21/02071

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

公开(公告)号：SG189292A1

公开(公告)日：2013-05-31

申请号：SG2013025697

申请日：2011-10-06

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

公开(公告)号：SG11201509933QA

公开(公告)日：2016-01-28

申请号：SG11201509933Q

申请日：2014-06-06

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN LI-MIN ,  LIPPY STEVEN ,  COOPER EMANUEL I ,  SONG LINGYAN

IPC: G03F7/32 ,  C09K13/00

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：SG11201507014RA

公开(公告)日：2015-10-29

申请号：SG11201507014R

申请日：2014-03-04

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： CHEN LI-MIN ,  COOPER EMANUEL I ,  LIPPY STEVEN ,  SONG LINGYAN ,  HSU CHIA-JUNG ,  TU SHENG-HUNG ,  WANG CHIEH JU ,  CHEN LI-MIN ,  COOPER EMANUEL I ,  LIPPY STEVEN ,  SONG LINGYAN ,  HSU CHIA-JUNG ,  TU SHENG-HUNG ,  WANG CHIEH JU

IPC: C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  G03F7/42

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：SG187551A1

公开(公告)日：2013-03-28

申请号：SG2013003736

申请日：2011-07-15

Applicant: ADVANCED TECH MATERIALS

Inventor： BARNES JEFFREY ,  LIPPY STEVEN ,  ZHENG PENG ,  RAJARAM REKHA

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

公开(公告)号：SG11201601158VA

公开(公告)日：2016-03-30

申请号：SG11201601158V

申请日：2014-08-28

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： COOPER EMANUEL I ,  CHEN LI-MIN ,  LIPPY STEVEN ,  HSU CHIA-JUNG ,  TU SHENG-HUNG ,  WANG CHIEH JU

IPC: C09K13/00 ,  H01L21/306

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.

公开(公告)号：SG11201403556WA

公开(公告)日：2014-07-30

申请号：SG11201403556W

申请日：2012-12-27

Applicant: ADVANCED TECH MATERIALS

Inventor： BARNES JEFFREY A ,  COOPER EMANUEL I ,  CHEN LI-MIN ,  LIPPY STEVEN ,  RAJARAM REKHA ,  TU SHENG-HUNG

IPC: H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：EP2964725A4

公开(公告)日：2016-11-23

申请号：EP14759688

申请日：2014-03-04

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： CHEN LI-MIN ,  COOPER EMANUEL I ,  LIPPY STEVEN ,  SONG LINGYAN ,  HSU CHIA-JUNG ,  TU SHENG-HUNG ,  WANG CHIEH JU

IPC: C09K13/08 ,  C09K13/10 ,  G03F7/42

CPC classification number: C09K13/00 ,  C09K13/08 ,  C09K13/10 ,  C23F1/14 ,  C23F1/26 ,  C23G1/02 ,  G03F7/423 ,  H01L21/32134