公开(公告)号：WO2012097143A3

公开(公告)日：2013-01-10

申请号：PCT/US2012021069

申请日：2012-01-12

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  BARNES JEFFREY A

Inventor： COOPER EMANUEL I ,  BARNES JEFFREY A

IPC: H01L21/302 ,  H01L21/265

CPC classification number: H01L21/02076 ,  H01L21/02057 ,  H01L21/31133

Abstract: Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device fabrication hardware. Preferably, the lanthanoidcontaining solids and/or species comprise cerium. The composition is preferably substantially devoid of fluoride ions.

Abstract translation: 用于从微电子器件或微电子器件制造硬件的表面去除含镧系元素的固体和/或物质的组合物和方法。 优选地，含镧系元素的固体和/或物质包括铈。 组合物优选基本上不含氟离子。

公开(公告)号：WO2010048139A3

公开(公告)日：2010-07-29

申请号：PCT/US2009061263

申请日：2009-10-20

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY A ,  BENAC BRIAN ,  BOGGS KARL E ,  FENG LIN ,  LIU JUN ,  PETRUSKA MELISSA A ,  YAN XIAODONG ,  ZHANG PENG

Inventor： BARNES JEFFREY A ,  BENAC BRIAN ,  BOGGS KARL E ,  FENG LIN ,  LIU JUN ,  PETRUSKA MELISSA A ,  YAN XIAODONG ,  ZHANG PENG

IPC: C11D1/62

CPC classification number: C11D3/0073 ,  B08B3/08 ,  C11D1/72 ,  C11D3/042 ,  C11D3/2096 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和方法，用于清洁来自其上具有所述残留物和污染物的微电子装置的化学机械抛光（CMP）残留物和污染物。 清洁组合物包含新颖的腐蚀抑制剂。 该组合物实现了对微电子器件表面上的CMP后残留物和污染物质的高效清洁，而不损害低k介电材料或铜互连材料。

公开(公告)号：WO2012154498A3

公开(公告)日：2013-01-31

申请号：PCT/US2012036329

申请日：2012-05-03

Applicant: ADVANCED TECH MATERIALS ,  CHEN LI-MIN RAYMOND ,  COOPER EMANUEL I ,  BARNES JEFFREY A ,  LIU JUN ,  SUN LAISHENG ,  BAUM THOMAS ,  KORZENSKI MICHAEL ,  LOCHTENBERG BEN ,  DUBOIS LAWRENCE

Inventor： CHEN LI-MIN RAYMOND ,  COOPER EMANUEL I ,  BARNES JEFFREY A ,  LIU JUN ,  SUN LAISHENG ,  BAUM THOMAS ,  KORZENSKI MICHAEL ,  LOCHTENBERG BEN ,  DUBOIS LAWRENCE

IPC: H01L31/042 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/02052 ,  C11D3/042 ,  C11D3/046 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0041 ,  C11D11/0047 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Removal compositions and processes for removing at least one metal impurity from a substrate (e.g., a silicon-containing substrate) having same thereon. Advantageously, the compositions remove metal impurities, e.g., iron, from silicon-containing substrates used as semiconductor devices and solar cell devices.

Abstract translation: 去除组合物和从其上具有相同的基底（例如含硅基底）去除至少一种金属杂质的方法。 有利地，组合物从用作半导体器件和太阳能电池器件的含硅衬底中除去金属杂质，例如铁。

公开(公告)号：WO2012048079A2

公开(公告)日：2012-04-12

申请号：PCT/US2011055049

申请日：2011-10-06

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

Inventor： CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

IPC: C23F1/02 ,  C23F1/44

CPC classification number: H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

Abstract translation: 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地移除第一金属栅极材料（例如，氮化钛）的移除组合物和工艺。 去除组合物可以包括氟化物或者可选地基本上不含氟化物。 衬底优选地包括高k /金属栅集成方案。

公开(公告)号：WO2012174518A2

公开(公告)日：2012-12-20

申请号：PCT/US2012042925

申请日：2012-06-18

Applicant: ADVANCED TECH MATERIALS ,  WU HSING-CHEN ,  COOPER EMANUEL I ,  KOJI YUKICHI ,  BARNES JEFFREY A ,  SHYU JIEH-HWA ,  IDA TOSHIYUKI ,  HUANG YUNG-HSIN ,  HSU HENG-KAI ,  HSU WISMA

Inventor： WU HSING-CHEN ,  COOPER EMANUEL I ,  KOJI YUKICHI ,  BARNES JEFFREY A ,  SHYU JIEH-HWA ,  IDA TOSHIYUKI ,  HUANG YUNG-HSIN ,  HSU HENG-KAI ,  HSU WISMA

CPC classification number: H01L21/31111

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to silicon oxide materials from a microelectronic device having same thereon. The removal compositions include at least one alkoxysilane, at least one etchant, at least one oxidizing agent, at least one organic solvent, and water.

Abstract translation: 可用于相对于氧化硅材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括至少一种烷氧基硅烷，至少一种蚀刻剂，至少一种氧化剂，至少一种有机溶剂和水。

公开(公告)号：WO2008036823A2

公开(公告)日：2008-03-27

申请号：PCT/US2007079044

申请日：2007-09-20

Applicant: ADVANCED TECH MATERIALS ,  ANGST DAVID ,  BARNES JEFFREY A ,  SONTHALIA PRERNA ,  ZHANG PENG

Inventor： ANGST DAVID ,  BARNES JEFFREY A ,  SONTHALIA PRERNA ,  ZHANG PENG

IPC: C11D3/28

CPC classification number: C11D11/0047 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281

Abstract: Compositions useful in microelectronic device manufacturing for cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that include copper metallization, for example, in operations such as post-chemical mechanical polishing cleaning of microelectronic device wafers. The aqueous compositions include at least one alkanolamine, at least one quaternary ammonium hydroxide, uric acid, at least one alcohol and at least one additional organic acid antioxidant.

Abstract translation: 可用于微电子器件制造中用于清洁晶片衬底如微电子器件前体结构的组合物。 该组合物可用于处理包括铜金属化的晶片，例如在诸如微电子器件晶片的化学后机械抛光清洁的操作中。 含水组合物包括至少一种链烷醇胺，至少一种季铵氢氧化物，尿酸，至少一种醇和至少一种另外的有机酸抗氧化剂。

公开(公告)号：WO2015095175A1

公开(公告)日：2015-06-25

申请号：PCT/US2014070566

申请日：2014-12-16

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： BILODEAU STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  WANG CHIEH JU ,  WU HSING-CHEN ,  TU SHENG-HUNG ,  PARSON THOMAS ,  YANG MIN-CHIEH

IPC: H01L21/18 ,  H01L21/306

CPC classification number: H01L21/32134 ,  H01L21/24 ,  H01L21/246 ,  H01L21/32051 ,  H01L29/16 ,  H01L29/26 ,  H01L29/45

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

Abstract translation: 用于相对于金属锗化物（例如，NiGe），金属III-V族材料和锗的微量电子器件选择性地除去未反应的金属材料（例如未反应的镍）的组合物和方法。 组合物基本上与微电子器件上存在的其它材料相容，如低k电介质和氮化硅。

公开(公告)号：WO2007092800A2

公开(公告)日：2007-08-16

申请号：PCT/US2007061588

申请日：2007-02-05

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY A

Inventor： BARNES JEFFREY A

CPC classification number: H01L21/02074 ,  C11D3/3409 ,  C11D11/0047

Abstract: An acidic composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The acidic composition includes surfactant, dispersing agent, sulfonic acid-containing hydrocarbon, and water. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 酸性组合物和方法，用于清洁来自其上具有所述残余物和污染物的微电子装置的化学机械抛光（CMP）残余物和污染物。 酸性组合物包括表面活性剂，分散剂，含磺酸的烃和水。 该组合物实现了对微电子器件表面上的CMP后残留物和污染物质的高效清洁，而不损害低k介电材料或铜互连材料。

公开(公告)号：SG158920A1

公开(公告)日：2010-02-26

申请号：SG2010005627

申请日：2006-01-26

Applicant: ADVANCED TECH MATERIALS

Inventor： WALKER ELIZABETH ,  NAGHSHINEH SHAHRI ,  BARNES JEFFREY A ,  OLDAK EWA ,  PETERS DARRYL W ,  YANDERS KEVIN P

Abstract: COMPOSITIONS FOR PROCESSING OF SEMICONDUTOR SUBSTRATES Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation- resistant in exposure to oxygen. Fig. 27A & 27B

公开(公告)号：SG11201403556WA

公开(公告)日：2014-07-30

申请号：SG11201403556W

申请日：2012-12-27

Applicant: ADVANCED TECH MATERIALS

Inventor： BARNES JEFFREY A ,  COOPER EMANUEL I ,  CHEN LI-MIN ,  LIPPY STEVEN ,  RAJARAM REKHA ,  TU SHENG-HUNG

IPC: H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.