公开(公告)号：AU3564699A

公开(公告)日：1999-11-01

申请号：AU3564699

申请日：1999-04-15

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY R ,  BAUM THOMAS H

IPC: C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  H01L21/44 ,  H01L21/441 ,  H01L21/8246 ,  H01L27/105

Abstract: A method of fabricating an electrode structure for a ferroelectric device structure including a ferroelectric material, involving chemical vapor deposition of a hybrid electrode constituting a multilayer electrode structure or an alloyed electrode structure, using either bubbler delivery or liquid delivery chemical vapor deposition.

公开(公告)号：AU2234099A

公开(公告)日：1999-09-06

申请号：AU2234099

申请日：1999-01-19

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY R ,  CHEN SHIN ING ,  BILODEAU STEVEN ,  BAUM THOMAS H

IPC: B32B9/00 ,  C07C55/02 ,  C23C16/40 ,  C30B25/02 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/187 ,  C30B23/00

Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

公开(公告)号：WO2005010941A3

公开(公告)日：2006-04-20

申请号：PCT/US2004022721

申请日：2004-07-01

Applicant: ADVANCED TECH MATERIALS ,  BOROVIK ALEXANDER S ,  XU CHONGYING ,  BAUM THOMAS H ,  BILODEAU STEVEN ,  ROEDER JEFFREY R ,  EBBING ABIGAIL ,  VESTYCK DANIEL

Inventor： BOROVIK ALEXANDER S ,  XU CHONGYING ,  BAUM THOMAS H ,  BILODEAU STEVEN ,  ROEDER JEFFREY R ,  EBBING ABIGAIL ,  VESTYCK DANIEL

IPC: C07F7/18 ,  C09D4/00 ,  C23C16/40 ,  C07F7/08

CPC classification number: C23C16/401 ,  C07F7/0814 ,  C07F7/1836 ,  C07F7/184 ,  C07F7/1844 ,  C09D4/00 ,  C08G77/04

Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (

Abstract translation: 一种用于气相沉积的有机硅前体，例如低k（高于100托）的低k高强度电介质膜的等离子体增强化学气相沉积（PECVD），其中所述前体包括以下中的至少一种：（i） 侧链环氧乙烷基官能团; 和（ii）下式的二甲硅烷基部分，其中x是0至4的整数，包括端值在内。 这些前体可用于形成绝缘膜的介电常数约为3以下，硬度超过1吉比帕斯卡。

公开(公告)号：EP1056594A4

公开(公告)日：2003-08-20

申请号：EP99902332

申请日：1999-01-19

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY R ,  CHEN ING-SHIN ,  BILODEAU STEVEN ,  BAUM THOMAS H

IPC: B32B9/00 ,  C07C55/02 ,  C23C16/40 ,  C30B25/02 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/187 ,  C30B23/00

CPC classification number: H01L41/187 ,  C30B25/02 ,  C30B29/32

Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Abstract translation: 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿型晶体材料包括晶格A位和B位，其中至少一个是通过存在选自（i）A位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 可以通过从薄膜的金属成分的金属有机前体的液体输送MOCVD形成钙钛矿晶体薄膜材料，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非易失性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。