公开(公告)号：WO2010088194A2

公开(公告)日：2010-08-05

申请号：PCT/US2010022050

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

IPC: C11D3/43 ,  C11D3/44

CPC classification number: C11D11/0041 ,  C11D1/66 ,  C11D1/667 ,  C11D1/825 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/70341 ,  G03F7/70925

Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

Abstract translation: 使用所述组合物从表面除去聚合材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。

公开(公告)号：WO2015095175A1

公开(公告)日：2015-06-25

申请号：PCT/US2014070566

申请日：2014-12-16

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： BILODEAU STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  WANG CHIEH JU ,  WU HSING-CHEN ,  TU SHENG-HUNG ,  PARSON THOMAS ,  YANG MIN-CHIEH

IPC: H01L21/18 ,  H01L21/306

CPC classification number: H01L21/32134 ,  H01L21/24 ,  H01L21/246 ,  H01L21/32051 ,  H01L29/16 ,  H01L29/26 ,  H01L29/45

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

Abstract translation: 用于相对于金属锗化物（例如，NiGe），金属III-V族材料和锗的微量电子器件选择性地除去未反应的金属材料（例如未反应的镍）的组合物和方法。 组合物基本上与微电子器件上存在的其它材料相容，如低k电介质和氮化硅。

公开(公告)号：WO2010088194A3

公开(公告)日：2010-11-25

申请号：PCT/US2010022050

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

IPC: C11D3/43 ,  C11D3/44

CPC classification number: C11D11/0041 ,  C11D1/66 ,  C11D1/667 ,  C11D1/825 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/70341 ,  G03F7/70925

Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.

Abstract translation: 使用所述组合物从表面除去聚合物材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。 所述组合物包含至少一种有机溶剂和一种非离子表面活性剂。 此外，所述组合物的pH为约5至9。

公开(公告)号：WO2012027667A3

公开(公告)日：2012-05-10

申请号：PCT/US2011049347

申请日：2011-08-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  SHEU CHIMIN ,  NAKANISHI MUTSUMI ,  MATSUOKA MASAHIRO ,  NAKAYAMA FUMIO ,  ZHANG PENG ,  KORZENSKI MICHAEL B ,  COOPER EMANUEL I ,  VECCHARELLI KATE ,  PAYNE MAKONNEN

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  SHEU CHIMIN ,  NAKANISHI MUTSUMI ,  MATSUOKA MASAHIRO ,  NAKAYAMA FUMIO ,  ZHANG PENG ,  KORZENSKI MICHAEL B ,  COOPER EMANUEL I ,  VECCHARELLI KATE ,  PAYNE MAKONNEN

IPC: H01L21/302

CPC classification number: C09C3/08 ,  B81C1/00619 ,  B81C1/00928 ,  H01L21/02082 ,  H01L21/302 ,  H01L21/306

Abstract: Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.

Abstract translation: 在干燥过程中减少脆性高纵横比结构所经受的毛细管力的方法，以基本上防止在干燥过程中对所述高纵横比结构造成损坏。 它们包括改变高纵横比结构的表面，使得力被充分地最小化，并且因此在其具有所述特征的结构的干燥期间，小于10％的高纵横比特征将具有弯曲或折叠。

公开(公告)号：WO2005010941A3

公开(公告)日：2006-04-20

申请号：PCT/US2004022721

申请日：2004-07-01

Applicant: ADVANCED TECH MATERIALS ,  BOROVIK ALEXANDER S ,  XU CHONGYING ,  BAUM THOMAS H ,  BILODEAU STEVEN ,  ROEDER JEFFREY R ,  EBBING ABIGAIL ,  VESTYCK DANIEL

Inventor： BOROVIK ALEXANDER S ,  XU CHONGYING ,  BAUM THOMAS H ,  BILODEAU STEVEN ,  ROEDER JEFFREY R ,  EBBING ABIGAIL ,  VESTYCK DANIEL

IPC: C07F7/18 ,  C09D4/00 ,  C23C16/40 ,  C07F7/08

CPC classification number: C23C16/401 ,  C07F7/0814 ,  C07F7/1836 ,  C07F7/184 ,  C07F7/1844 ,  C09D4/00 ,  C08G77/04

Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (

Abstract translation: 一种用于气相沉积的有机硅前体，例如低k（高于100托）的低k高强度电介质膜的等离子体增强化学气相沉积（PECVD），其中所述前体包括以下中的至少一种：（i） 侧链环氧乙烷基官能团; 和（ii）下式的二甲硅烷基部分，其中x是0至4的整数，包括端值在内。 这些前体可用于形成绝缘膜的介电常数约为3以下，硬度超过1吉比帕斯卡。

公开(公告)号：SG2014005136A

公开(公告)日：2014-03-28

申请号：SG2014005136

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

公开(公告)号：AU2234099A

公开(公告)日：1999-09-06

申请号：AU2234099

申请日：1999-01-19

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY R ,  CHEN SHIN ING ,  BILODEAU STEVEN ,  BAUM THOMAS H

IPC: B32B9/00 ,  C07C55/02 ,  C23C16/40 ,  C30B25/02 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/187 ,  C30B23/00

Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

公开(公告)号：SG187959A1

公开(公告)日：2013-03-28

申请号：SG2013014071

申请日：2011-08-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  SHEU CHIMIN ,  NAKANISHI MUTSUMI ,  MATSUOKA MASAHIRO ,  NAKAYAMA FUMIO ,  ZHANG PENG ,  KORZENSKI MICHAEL B ,  COOPER EMANUEL I ,  VECCHARELLI KATE ,  PAYNE MAKONNEN

Abstract: Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.

公开(公告)号：SG173172A1

公开(公告)日：2011-08-29

申请号：SG2011054442

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.

公开(公告)号：EP1056594A4

公开(公告)日：2003-08-20

申请号：EP99902332

申请日：1999-01-19

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY R ,  CHEN ING-SHIN ,  BILODEAU STEVEN ,  BAUM THOMAS H

IPC: B32B9/00 ,  C07C55/02 ,  C23C16/40 ,  C30B25/02 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/187 ,  C30B23/00

CPC classification number: H01L41/187 ,  C30B25/02 ,  C30B29/32

Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Abstract translation: 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿型晶体材料包括晶格A位和B位，其中至少一个是通过存在选自（i）A位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 可以通过从薄膜的金属成分的金属有机前体的液体输送MOCVD形成钙钛矿晶体薄膜材料，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非易失性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。