公开(公告)号：WO2004036175A3

公开(公告)日：2004-06-17

申请号：PCT/US0332521

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

Abstract translation: 气体检测器（54）和用于检测含有气体的气体中的含氟物质的方法，例如用HF，NF3等进行蚀刻清洗的半导体加工工具的流出物。优选结构布置中的检测器采用微机电 系统（MEMS）的装置结构和/或自立式金属元件（8），其在需要高温感测时用作感测部件并且可选地作为热源。 独立金属元件可以直接制造在标准芯片载体/器件封装（6）上，使得封装成为检测器的平台。

公开(公告)号：WO2005081931A3

公开(公告)日：2006-02-02

申请号：PCT/US2005005607

申请日：2005-02-23

Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  WELCH JAMES

Inventor： DIMEO FRANK JR ,  CHEN PHILIP S H ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  WELCH JAMES

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/16 ,  G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981

Abstract: A (MEMS)-based gas sensor assembly (35) for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide (4) support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds (16) that are subsequently removable for forming structure layers.

Abstract translation: 一种用于检测含有它的气体中的含氟物质的（MEMS）的气体传感器组件（35），例如用HF，NF3等进行蚀刻清洁的半导体处理工具的流出物。这种气体传感器组件 优选实施例包括具有涂覆在其上的气体感测材料层，优选镍或镍合金层的独立式碳化硅（4）支撑结构。 这种气体传感器组件优选地通过使用牺牲模具（16）的微型模制技术来制造，该模具随后可拆卸以形成结构层。

公开(公告)号：SG135180A1

公开(公告)日：2007-09-28

申请号：SG2007058092

申请日：2005-02-08

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN ING-SHIN ,  NEUNER JEFFREY W

IPC: H05B1/02

Abstract: A method for determining presence and/or concentration of a target gas species in an environment, said method comprising electrically heating a gas sensing element whose electrical resistance changes in correspondence to presence and/or concentration of the target gas species, wherein said electrically heating comprises maintenance of constant power input to the gas sensing element, and determining from change in electrical resistance of the gas sensing element the presence and/or concentration of the target gas species.

公开(公告)号：WO2007041454A3

公开(公告)日：2009-05-22

申请号：PCT/US2006038358

申请日：2006-10-03

Applicant: ADVANCED TECH MATERIALS ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  ROEDER JEFFREY F ,  BILODEAU STEVEN M ,  HENDRIX BRYAN C ,  CHEN PHILIP S H

Inventor： CHEN ING-SHIN ,  NEUNER JEFFREY W ,  ROEDER JEFFREY F ,  BILODEAU STEVEN M ,  HENDRIX BRYAN C ,  CHEN PHILIP S H

IPC: H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC classification number: H01L21/67253 ,  C23C16/4405 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67069

Abstract: Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.

Abstract translation: 用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。 清洁过程包括使清洁流体与待清洁的结构接触并产生具有对应于结构清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生 指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。 还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。

公开(公告)号：WO2005072161A3

公开(公告)日：2005-12-29

申请号：PCT/US2005001409

申请日：2005-01-14

Applicant: ADVANCED TECH MATERIALS ,  CHEN PHILIP S H ,  CHEN ING-SHIN ,  DIMEO FRANK JR ,  NEUNER JEFFREY W ,  WELCH JAMES ,  ROEDER JEFFREY F

Inventor： CHEN PHILIP S H ,  CHEN ING-SHIN ,  DIMEO FRANK JR ,  NEUNER JEFFREY W ,  WELCH JAMES ,  ROEDER JEFFREY F

IPC: G01N9/00 ,  G01N27/12 ,  G01N33/00

CPC classification number: G01N27/16

Abstract: A gas detector and process for detecting a target gas species, such as a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The gas detector in one aspect employs a nickel-containing filament that is sensitive to the fluorine-containing species, which can function both as a sensing component and as a heat source when elevated temperature sensing is required. The gas detector in one aspect employs an elongated gas sensor element that can be vertically mounted on a support structure. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of such gas sensor element.

Abstract translation: 一种用于检测目标气体种类的气体检测器和方法，例如含有其的气体中的含氟物质，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。一个方面的气体检测器 采用对含氟物质敏感的含镍丝，当需要高温检测时，它们既可以作为传感元件又可作为热源。 气体检测器在一个方面使用可以垂直安装在支撑结构上的细长的气体传感器元件。 这种细长气体传感器元件在支撑结构上的垂直安装显着地改善了信号强度，减少了响应时间，使气体检测器的占地面积最小化，并提供了用于适应这种气体传感器元件的热膨胀/收缩的结构灵活性。

公开(公告)号：WO2006101897A2

公开(公告)日：2006-09-28

申请号：PCT/US2006009330

申请日：2006-03-15

Applicant: ADVANCED TECH MATERIALS ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  WELCH JAMES ,  ROEDER JEFFREY F

Inventor： CHEN ING-SHIN ,  NEUNER JEFFREY W ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  WELCH JAMES ,  ROEDER JEFFREY F

IPC: H01L21/302 ,  C23F1/00 ,  G01L21/30

CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

Abstract: A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

Abstract translation: 一种气体传感器和气体传感方法，例如，对于使用含卤素等离子体和/或含氧的半导体蚀刻设备中用于确定等离子体条件（例如，等离子体蚀刻终点）的下游传感器元件有用的类型 等离子体。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

公开(公告)号：WO2004036175B1

公开(公告)日：2004-07-22

申请号：PCT/US0332521

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

Abstract translation: 一种气体检测器（54）和用于检测含有它的气体中的含氟物质的方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的结构布置中的检测器采用微机电 基于系统（MEMS）的器件结构和/或独立的金属元件（8），当需要高温感测时，其用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装（6）上，使得封装成为检测器的平台。

公开(公告)号：EP1554561A4

公开(公告)日：2009-11-11

申请号：EP03809006

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

IPC: G01N33/00 ,  G01N27/12 ,  G01N9/00 ,  G01N27/16

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

公开(公告)号：EP1861868A4

公开(公告)日：2010-11-24

申请号：EP06738395

申请日：2006-03-15

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN ING-SHIN ,  NEUNER JEFFREY W ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  WELCH JAMES ,  ROEDER JEFFREY F

IPC: H01L21/302

CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

公开(公告)号：EP1056594A4

公开(公告)日：2003-08-20

申请号：EP99902332

申请日：1999-01-19

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY R ,  CHEN ING-SHIN ,  BILODEAU STEVEN ,  BAUM THOMAS H

IPC: B32B9/00 ,  C07C55/02 ,  C23C16/40 ,  C30B25/02 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/187 ,  C30B23/00

CPC classification number: H01L41/187 ,  C30B25/02 ,  C30B29/32

Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Abstract translation: 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿型晶体材料包括晶格A位和B位，其中至少一个是通过存在选自（i）A位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 可以通过从薄膜的金属成分的金属有机前体的液体输送MOCVD形成钙钛矿晶体薄膜材料，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非易失性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。