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公开(公告)号：GB2347145B
公开(公告)日：2001-05-02
申请号：GB0004398
申请日：2000-02-24
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MIZUTA SUSUMA , TSUCHIVA TETSUO , WATANABE AKIO , IMAI YOJI , YAMAGUCHI IWAO , KUMAGAI TOSHIYA , MANABE TAKAAKI , NIINO HIROYUKI , YABE AKIRA
Abstract: There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provide a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can be produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.
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公开(公告)号：AU742356B2
公开(公告)日：2002-01-03
申请号：AU2518900
申请日：2000-03-31
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MIZUTA SUSUMU , TSUCHIYA TETSUO , WATANABE AKIO , IMAI YOJI , YAMAGUCHI IWAO , KUMAGAI TOSHIYA , MANABE TAKAAKI , NIINO HIROYUKI , YABE AKIRA
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公开(公告)号：AU2518900A
公开(公告)日：2000-11-23
申请号：AU2518900
申请日：2000-03-31
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MIZUTA SUSUMU , TSUCHIYA TETSUO , WATANABE AKIO , IMAI YOJI , YAMAGUCHI IWAO , KUMAGAI TOSHIYA , MANABE TAKAAKI , NIINO HIROYUKI , YABE AKIRA
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公开(公告)号：GB2347145A
公开(公告)日：2000-08-30
申请号：GB0004398
申请日：2000-02-24
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MIZUTA SUSUMA , TSUCHIVA TETSUO , WATANABE AKIO , IMAI YOJI , YAMAGUCHI IWAO , KUMAGAI TOSHIYA , MANABE TAKAAKI , NIINO HIROYUKI , YABE AKIRA
Abstract: A method for producing a metal oxide, comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, or a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provide a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or shorter wavelength, to form a metal oxide on the substrate. According to this method a metal oxide can be produced without applying a heat treatment at a high temperature to the degree adopted in the conventionally known application thermal decomposition method. A minute pattern can be obtained by irradiation with a laser light according to a pattern shape or through a mask pattern.
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Patent Agency Ranking
公开(公告)号：CA2303549C
公开(公告)日：2004-05-25
申请号：CA2303549
申请日：2000-03-30
Applicant: AGENCY IND SCIENCE TECHN
Inventor： WATANABE AKIO , KUMAGAI TOSHIYA , TSUCHIYA TETSUO , IMAI YOJI , YAMAGUCHI IWAO , MANABE TAKAAKI , NIINO HIROYUKI , YABE AKIRA , MIZUTA SUSUMU
Abstract: There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provides a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can be produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.
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公开(公告)号：CA2303549A1
公开(公告)日：2000-11-17
申请号：CA2303549
申请日：2000-03-30
Applicant: AGENCY IND SCIENCE TECHN
Inventor： KUMAGAI TOSHIYA , YABE AKIRA , MANABE TAKAAKI , NIINO HIROYUKI , MIZUTA SUSUMU , IMAI YOJI , TSUCHIYA TETSUO , YAMAGUCHI IWAO , WATANABE AKIO
Abstract: There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provides a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can beg produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.
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公开(公告)号：JP2001131747A
公开(公告)日：2001-05-15
申请号：JP30803299
申请日：1999-10-29
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKODA MASAKAZU , TSUNODA TATSURO , IMAI YOJI
IPC: C23C16/42
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacture which produces high-purity β-FeSi2 having a desired film thickness in a short period of time without requiring intricate stages which take a long time. SOLUTION: This method for multi-stage manufacture of the β-FeSi2 consists in executing a stage of supplying an iron source as a raw material, then supplying a silicon source as one stage and repetitively executing this stage >=2 times, in which the molar ratio of the silicon atoms to the iron atoms in the raw material supply in the respective stages is specified to >=0.5 to
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公开(公告)号：JPH0383892A
公开(公告)日：1991-04-09
申请号：JP22215889
申请日：1989-08-29
Applicant: AGENCY IND SCIENCE TECHN
Inventor： IMAI YOJI , WATANABE AKIO , OSATO KAZUO , KAMEYAMA TETSUYA , FUKUDA KENZO
Abstract: PURPOSE:To readily control crystal growth direction by decomposing gas of an oxygen-containing metallic compound with light irradiation, forming a thin film-like crystal of metal oxide on a base plate and growing the crystal to direction of light irradiation. CONSTITUTION:A base plate 2 is installed in a chamber 1 and gas of an oxygen- containing metallic compound (e.g. tantalum pentamethoxide gas) is introduced into the chamber 1 together with carrier gas 7. Simultaneously, light 4 from light source 11 is irradiated to the base plate 2 and the gas of oxygen-containing metallic compound is decomposed, then thin film-like crystal of metal oxide (e.g. tantalum pentoxide) is formed on the base plate, thus said crystal is grown to the irradiated direction of the light 4. By said method, the crystal growth direction is able to be controlled to a desired direction by controlling angle of the base plate 2 to the light 4, then various chemical and physical properties of the thin film are able to be controlled.
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公开(公告)号：JP2001031417A
公开(公告)日：2001-02-06
申请号：JP30864499
申请日：1999-10-29
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MIZUTA SUSUMU , TSUCHIYA TETSUO , WATANABE AKIO , IMAI YOJI , YAMAGUCHI IWAO , KUMAGAI TOSHIYA , MANABE TAKAAKI , NIINO HIROYUKI , YABE AKIRA
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a metal oxide without carrying out a high temperature thermal treatment which has been known as a coating thermal decomposition method. SOLUTION: This method for producing a metal oxide comprises dissolving a metal organic compound (a metal organic acid salt, a metal acetylacetonate complex, a metal alkoxide having a >=6C organic group) in a solvent, coating the obtained solution on a substrate, drying the coated solution, and then irradiating the formed coating film with laser light having a wavelength of
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