公开(公告)号：JPS6215407A

公开(公告)日：1987-01-23

申请号：JP15450485

申请日：1985-07-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SAKAMOTO SUMINORI ,  OOTA KIMIHIRO ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  KOJIMA TAKESHI

IPC: G01B15/00 ,  G01B15/02 ,  G01N23/207

Abstract: PURPOSE:To make one period of an hourly variation of an intensity of a diffraction image correspond to a variation of a film thickness of a specified atomic layer, by making an electron beam incident from a specified direction of an Si substrate in the course of growth of a thin film crystal, and observing the hourly variation of the intensity of the diffraction image. CONSTITUTION:In the course of growth of a silicon thin film crystal, an electron beam 102 is made incident an bearing of a silicon substrate 100 on which a (001) surface for a crystal growth is a main surface. In this way, an hourly variation of an intensity of a diffraction image 103 of a reflected high speed electron beam diffracting method is observed. By this method, one period of the hourly variation can be made to correspond to a film thickness of two atomic layers. Also, when the hourly variation of the intensity of the diffraction image is observed by making the electron beam 102 incident on other direction than of the silicon substrate 100, for instance, , , , etc., one period of the variation can be made to correspond to a film thickness of one atomic layer.

公开(公告)号：JPS61227164A

公开(公告)日：1986-10-09

申请号：JP6813085

申请日：1985-03-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  KOJIMA TAKESHI ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  SAKAMOTO SUMINORI ,  KAWASHIMA MITSUO

IPC: C23C14/30 ,  C23C14/54 ,  C30B23/08 ,  C30B29/68 ,  C30B33/00

Abstract: PURPOSE:To evaporate the extra-thin film layer on the surface of a solid material precisely and exactly by controlling the evaporation of the material on the surface of the solid material in synchronization with the change of the intensity of the reflected electron rays, etc., of the electron rays made incident on the solid material in order to evaporate said material. CONSTITUTION:The electron rays 3 are made incident from an electron gun 2 on the surface of a substrate 1 in a vacuum vessel 36 to evaporate the substrate 1. The intensity of the reflected, diffracted and scattered electron rays 4, 5, 6 generated on the surface of the substrate 1 in this stage is detected with a photodetector 11 provided with a fluorescent screen, an ammeter 25 provided with an electron multiplier 24, etc., or the absorbing current flowing in the substrate 1 is detected by an ammeter 23 and is inputted to a computer 13 via an A/D converter 12. The computer adjusts a light source 27, ion gun 30, electron gun 32, molecular ray generating cell 34, shutter 17, heater 20, etc., for the above-mentioned substrate 1 via a controller 14 in synchronization with the time change of the detected value thereby controlling precisely the evaporation of the material on the surface of the substrate 1.

公开(公告)号：JPH03115190A

公开(公告)日：1991-05-16

申请号：JP24511090

申请日：1990-09-14

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OTA KIMIHIRO ,  SAKAMOTO SUMINORI ,  NAKAGAWA ITARU ,  KAWAI NAOYUKI ,  KOJIMA TAKESHI

IPC: C30B23/00 ,  C30B23/08 ,  C30B29/40 ,  C30B29/68 ,  H01L21/203

Abstract: PURPOSE:To grow a standard crystal having exact mixed crystal compsn. ratios by determining the mixed crystal compsn. ratios of mixed crystals by the change, with time, in the intensity of the reflected electron diffraction image formed by a reflected electron beam diffraction device at the time of crystal growth in a vacuum. CONSTITUTION:The reflected electron beam diffraction device (RHEED) image projected on a screen 14 is formed on an X-Y stage 18 by a camera lens 16. The light at a suitable one point of this image is introduced by a fiber 17 to a photodetector 19, the output signal of which is supplied through an A/D converts 21 to a computer 22. On the other hand, the output signal of the photodetector 19 is outputted to a recorder 20 and is thereby monitored. A controller 23 is then operated in accordance with the command from the computer 22 to execute the control, etc., of the drawing out voltages, gas flow rates, etc., of shutters 8, main shutters 9 and ion guns 4 of respective sources 3. The mixed crystal compsn. ratios of the mixed crystals formed on the substrate 1 are exactly determined in this way by the change, with time, in the intensity of the above-mentioned diffraction image.

公开(公告)号：JPS6217093A

公开(公告)日：1987-01-26

申请号：JP15450385

申请日：1985-07-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SAKAMOTO SUMINORI ,  OOTA KIMIHIRO ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  KOJIMA TAKESHI

IPC: C30B1/02 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  C30B29/06 ,  H01L21/203 ,  H01L21/324

Abstract: PURPOSE:To enable the observation of the strengthened vibration of a reflective high-speed electron beam diffracted image in a range over a long period by holding a growing base plate at high temp. to even the surface and thereafter using a crystallization device in the vacuum atmosphere which is provided with a reflective electron beam diffraction device and growing a thin film crystal. CONSTITUTION:In a method for growing a thin film crystal by using a crystal growing device in the vacuum atmosphere which is provided with a reflective electron beam diffraction device, a base plate for growing the thin film is held at temp. higher than the temp. growing this thin film and annealed before starting the growth of the thin film crystal. The surface is flattened by the surface diffusion effect of atom and thereafter the thin film crystal is grown on the base plate. By this method, the strengthened vibration of a reflective high-speed electron beam diffracted image can stably be observed while growing the thin film and the thin film crystal can precisely be grown.

公开(公告)号：JPS61225625A

公开(公告)日：1986-10-07

申请号：JP6813185

申请日：1985-03-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  KOJIMA TAKESHI ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  SAKAMOTO SUMINORI ,  KAWASHIMA MITSUO

IPC: G01K11/00 ,  G01K11/30

Abstract: PURPOSE:To measure the surface temperature of solid material accurately with a better reproducibility, by detecting hourly changes in the intensity of electron reflected, diffracted or scattered on the surface of the solid material or the cycle of hourly changes in the absorption current flowing through the solid material. CONSTITUTION:An incident electron beam 11 from an electron gun 10 is reflected, diffracted or scattered on the surface of a substrate and the reflected electron beam and the diffracted electron beam obtained in a proper direction projects spot images on a fluorescent screen 12. These spot images are formed on an X-Y stage 14 with a camera or a lens 13 and one thereof is supplied to a photodetector 16 through an optical fiber 15 from the stage 14 to record the hourly changes in the output thereof by observing with a recorder 17. It is already discovered that the intensity of the specular spot in which the normal reflection highest in the intensity among those of the diffracted images is overlapped with the 0-order Laue point vibrates during the grow of crystal but the vibration thereof continues even after the growth is stopped. The relationship between the cycle of the vibration after the stoppage of the growth and the substrate temperature is memorized into a computer to be compared with the actually measured cycle, thereby enabling automatic measurement of temperature.

公开(公告)号：JPS61222986A

公开(公告)日：1986-10-03

申请号：JP16912584

申请日：1984-08-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  SAKAMOTO SUMINORI ,  NAKAGAWA ITARU ,  KAWAI NAOYUKI ,  KOJIMA TAKESHI

IPC: C30B29/40 ,  C30B23/00 ,  C30B23/08 ,  H01L21/02 ,  H01L21/20 ,  H01L21/66

Abstract: PURPOSE:To estimate the state of crystal growth and to control the titled thickness of film, by measuring change of intensity of diffraction pattern of reflection electron rays with time, corresponding a monoatomic layer. CONSTITUTION:The image of diffusion pattern of reflection electron rays of crystal on the substrate 1 formed on the screen 14 by the gun 12 of a diffusion device of reflection electron rays is made on the X-Y stage 18 by the camera lens 16, light at one point of the image is transferred to the receptor 19 by the fiber 17, its output signal is fed from the A-D converter 21 to the computer 22. On the other hand, the output signal of the receptor 19 is made to output to the recorder 20, and monitered. The shutter make-and-break drive control device 23 is operated by the order of the computer 22, so the shutters 8 of the material 3 required for crystal growth, the main shutter 9, the pulling voltage of the ion gun 4, regulation of gas flow rate, closing and opening, half opening, ON, OFF, etc. of electronic current flow of the electron gun 35 are controlled. Since one period of vibration of the diffusion pattern of reflection electron beam is correspondent to a monoatomic layer, the order of the growing layer can be estimated by the number of vibrations from biginning of crystal growth.