公开(公告)号：JPH04154114A

公开(公告)日：1992-05-27

申请号：JP27999390

申请日：1990-10-18

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SAKAMOTO KUNIHIRO ,  SAKAMOTO SUMINORI ,  MIKI ICHIJI

IPC: H01L29/04 ,  H01L21/20

Abstract: PURPOSE:To laminate fine line structures whose cycle is different by a method wherein a part near a plane (001) at an Si or Ge single-crystal substrate is kept in such a way that its temperature can be controlled, the growth operation of a crystal is interrupted by controlling the temperature and the crystal is grown by being separated into two monoatomic layers. CONSTITUTION:An Si substrate 100 is housed in a vacuum chamber; and it is kept at a required temperature by using a heater or a cooling device. When both orientations of the substrate are close to , step edges are situated along and two kinds of monoatomic-layer steps are produced. A monoatomic-layer step SA where atoms on the terrace on the step, unbonded hands and a step end are vertical and a step SB which is parallel to it are arranged. A temperature is controlled; the Ge monoatomic-layer step SB is used as a starting point; a 0.5 atomic layer is formed selectively; and the steps SA, SB are separated. When the growth interruption time is set sufficiently, the interval between the steps GA, SB is returned to an interval before the growth operation. The step SB is used again as a starting point; a selective growth operation is executed in the same manner; and the steps are separated. When the operation is repeated, it is possible to form the extremely fine line structure of Ge in which the diffusion and the adhesion rate of Ge are controlled and which uses the interval between the monoatomic-layer steps SA, SB of the Si substrate is used as a cycle.

公开(公告)号：JPH06302840A

公开(公告)日：1994-10-28

申请号：JP11390593

申请日：1993-04-16

Applicant: AGENCY IND SCIENCE TECHN

Inventor： MIKI ICHIJI ,  SAKAMOTO KUNIHIRO ,  SAKAMOTO SUMINORI

IPC: H01L31/04

Abstract: PURPOSE:To obtain a solar cell wherein incident light in a long wavelength region is absorbed and photoelectric conversion efficiency is increased by a method wherein a quantum well layer or a superlattice layer is formed in a bonding part. CONSTITUTION:Two semiconductor layers out of an n-type semiconductor layer 2, a p-type semiconductor layer 5 and an i-type semiconductor layer are bonded in a bonding part, and incident light L is photoelectrically converted and taken out as electric power from electrodes 1, 6 connected respectively to the two semiconductor layers. In such a solar cell, a quantum well layer 3 or a superlattice layer is formed in the bonding part. Alternatively, a graded layer which has changed a potential continuously is formed at least in the quantum well layer 3 or the superlattice layer and between the two semiconductor layers. For example, an n-type semiconductor layer 2 and a p-type semiconductor layer 5 in which crystal Si has been doped respectively with As and Ga are formed, a mixed-crystal semiconductor layer in which the composition ratio of Si to Ge is 80% to 20% is formed between them and it is used as a quantum well layer 3.

公开(公告)号：JPS6215407A

公开(公告)日：1987-01-23

申请号：JP15450485

申请日：1985-07-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SAKAMOTO SUMINORI ,  OOTA KIMIHIRO ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  KOJIMA TAKESHI

IPC: G01B15/00 ,  G01B15/02 ,  G01N23/207

Abstract: PURPOSE:To make one period of an hourly variation of an intensity of a diffraction image correspond to a variation of a film thickness of a specified atomic layer, by making an electron beam incident from a specified direction of an Si substrate in the course of growth of a thin film crystal, and observing the hourly variation of the intensity of the diffraction image. CONSTITUTION:In the course of growth of a silicon thin film crystal, an electron beam 102 is made incident an bearing of a silicon substrate 100 on which a (001) surface for a crystal growth is a main surface. In this way, an hourly variation of an intensity of a diffraction image 103 of a reflected high speed electron beam diffracting method is observed. By this method, one period of the hourly variation can be made to correspond to a film thickness of two atomic layers. Also, when the hourly variation of the intensity of the diffraction image is observed by making the electron beam 102 incident on other direction than of the silicon substrate 100, for instance, , , , etc., one period of the variation can be made to correspond to a film thickness of one atomic layer.

公开(公告)号：JPS61227164A

公开(公告)日：1986-10-09

申请号：JP6813085

申请日：1985-03-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  KOJIMA TAKESHI ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  SAKAMOTO SUMINORI ,  KAWASHIMA MITSUO

IPC: C23C14/30 ,  C23C14/54 ,  C30B23/08 ,  C30B29/68 ,  C30B33/00

Abstract: PURPOSE:To evaporate the extra-thin film layer on the surface of a solid material precisely and exactly by controlling the evaporation of the material on the surface of the solid material in synchronization with the change of the intensity of the reflected electron rays, etc., of the electron rays made incident on the solid material in order to evaporate said material. CONSTITUTION:The electron rays 3 are made incident from an electron gun 2 on the surface of a substrate 1 in a vacuum vessel 36 to evaporate the substrate 1. The intensity of the reflected, diffracted and scattered electron rays 4, 5, 6 generated on the surface of the substrate 1 in this stage is detected with a photodetector 11 provided with a fluorescent screen, an ammeter 25 provided with an electron multiplier 24, etc., or the absorbing current flowing in the substrate 1 is detected by an ammeter 23 and is inputted to a computer 13 via an A/D converter 12. The computer adjusts a light source 27, ion gun 30, electron gun 32, molecular ray generating cell 34, shutter 17, heater 20, etc., for the above-mentioned substrate 1 via a controller 14 in synchronization with the time change of the detected value thereby controlling precisely the evaporation of the material on the surface of the substrate 1.

公开(公告)号：JPH04154113A

公开(公告)日：1992-05-27

申请号：JP27999290

申请日：1990-10-18

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SAKAMOTO KUNIHIRO ,  SAKAMOTO SUMINORI ,  MIKI ICHIJI

IPC: H01L29/04 ,  H01L21/20

Abstract: PURPOSE:To laminate fine lines whose cycle is different by a method wherein a part near a (001) plane of an Si or Ge single-crystal substrate is kept in such a way that its degree of vacuum and its temperature can be controlled, the temperature of the substrate and the supply amount of a raw material are controlled and a crystal growth operation is made to progress selectively on the surface of the substrate. CONSTITUTION:A vacuum chamber 21 is provided with an Si substrate 100 and raw-material supply devices 22, 23. The Si substrate is kept at a required temperature by using a heater or a cooling device 24. Since the plane orientation of the substrate is close to , two kinds of monoatomic layer steps whose step edge is situated along exist. They are a monoatomic-layer step SA where unbonded hands of atoms on the terrace on the upper side of the step and a step edge are vertical and a step SB which is parallel to it. On the surface which is tilted to , the steps SA and SB are arranged in parallel. For example, an Si step SB is used as a stating point, a 0.5 atomic layer is grown selectively and two atomic-layer steps are formed. When one atomic layer of Ge is grown in succession, it is grown to two atomic-layer thicknesses and a half of the terrace is covered with Ge. Then, Si is grown by the portion of one atomic layer. When this operation is repeated, an extremely fine line structure by Ge can be obtained at a cycle of 2l which is twice a monoatomic-layer step interval l of the Si substrate 100.

公开(公告)号：JPH04316316A

公开(公告)日：1992-11-06

申请号：JP10970091

申请日：1991-04-15

Applicant: AGENCY IND SCIENCE TECHN

Inventor： MIKI ICHIJI ,  SAKAMOTO KUNIHIRO ,  SAKAMOTO SUMINORI ,  MATSUHATA HIROFUMI ,  OKUMURA HAJIME ,  YOSHIDA SADAJI

IPC: H01L21/20

Abstract: PURPOSE:To obtain a method for growing crystal over a critical thickness with no restriction of the in-lane lattice constant on the surface of substrate crystal. CONSTITUTION:Superlattice crystal 4 composed of first and second constituent crystals 2, 3 is laminated over a critical thickness on a substrate crystal 1 to cause dislocation T therein thus growing crystal having in-plane lattice constant different from that of the substrate crystal 1.

公开(公告)号：JPS61225625A

公开(公告)日：1986-10-07

申请号：JP6813185

申请日：1985-03-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  KOJIMA TAKESHI ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  SAKAMOTO SUMINORI ,  KAWASHIMA MITSUO

IPC: G01K11/00 ,  G01K11/30

Abstract: PURPOSE:To measure the surface temperature of solid material accurately with a better reproducibility, by detecting hourly changes in the intensity of electron reflected, diffracted or scattered on the surface of the solid material or the cycle of hourly changes in the absorption current flowing through the solid material. CONSTITUTION:An incident electron beam 11 from an electron gun 10 is reflected, diffracted or scattered on the surface of a substrate and the reflected electron beam and the diffracted electron beam obtained in a proper direction projects spot images on a fluorescent screen 12. These spot images are formed on an X-Y stage 14 with a camera or a lens 13 and one thereof is supplied to a photodetector 16 through an optical fiber 15 from the stage 14 to record the hourly changes in the output thereof by observing with a recorder 17. It is already discovered that the intensity of the specular spot in which the normal reflection highest in the intensity among those of the diffracted images is overlapped with the 0-order Laue point vibrates during the grow of crystal but the vibration thereof continues even after the growth is stopped. The relationship between the cycle of the vibration after the stoppage of the growth and the substrate temperature is memorized into a computer to be compared with the actually measured cycle, thereby enabling automatic measurement of temperature.

公开(公告)号：JPS61222986A

公开(公告)日：1986-10-03

申请号：JP16912584

申请日：1984-08-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  SAKAMOTO SUMINORI ,  NAKAGAWA ITARU ,  KAWAI NAOYUKI ,  KOJIMA TAKESHI

IPC: C30B29/40 ,  C30B23/00 ,  C30B23/08 ,  H01L21/02 ,  H01L21/20 ,  H01L21/66

Abstract: PURPOSE:To estimate the state of crystal growth and to control the titled thickness of film, by measuring change of intensity of diffraction pattern of reflection electron rays with time, corresponding a monoatomic layer. CONSTITUTION:The image of diffusion pattern of reflection electron rays of crystal on the substrate 1 formed on the screen 14 by the gun 12 of a diffusion device of reflection electron rays is made on the X-Y stage 18 by the camera lens 16, light at one point of the image is transferred to the receptor 19 by the fiber 17, its output signal is fed from the A-D converter 21 to the computer 22. On the other hand, the output signal of the receptor 19 is made to output to the recorder 20, and monitered. The shutter make-and-break drive control device 23 is operated by the order of the computer 22, so the shutters 8 of the material 3 required for crystal growth, the main shutter 9, the pulling voltage of the ion gun 4, regulation of gas flow rate, closing and opening, half opening, ON, OFF, etc. of electronic current flow of the electron gun 35 are controlled. Since one period of vibration of the diffusion pattern of reflection electron beam is correspondent to a monoatomic layer, the order of the growing layer can be estimated by the number of vibrations from biginning of crystal growth.

公开(公告)号：JPH06283432A

公开(公告)日：1994-10-07

申请号：JP3454193

申请日：1993-01-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SAKAMOTO KUNIHIRO ,  MIKI ICHIJI ,  SAKAMOTO SUMINORI

IPC: C30B23/02 ,  C30B29/68 ,  H01L21/205

Abstract: PURPOSE:To form a lightly doped crystalline layer with a good heterojunction by forming a bismuth-absorbing layer on a single-crystal silicon substrate, and supplying a source gas over the substrate to grow single-crystal film under the bismuth-absorbing layer. CONSTITUTION:A bismuth-absorbing layer 8 is formed on a silicon substrate 4, and germanium is supplied. The germanium enters under the bismuth- absorbing layer 8, but it is prevented from diffusing. As a result, the three- dimensional growth of germanium is prevented and thus a flat germanium layer 9 is formed on the substrate 4. Silicon is supplied so that it may enter under the bismuth-absorbing layer 8. This prevents the germanium from depositing on the surface, resulting in a good heterojunction. After bismuth is removed, silicon is further supplied to form a flat silicon layer of good crystallinity. According to this method, it is possible to form a lightly doped crystalline layer with a good heterojunction.

公开(公告)号：JPH03115190A

公开(公告)日：1991-05-16

申请号：JP24511090

申请日：1990-09-14

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OTA KIMIHIRO ,  SAKAMOTO SUMINORI ,  NAKAGAWA ITARU ,  KAWAI NAOYUKI ,  KOJIMA TAKESHI

IPC: C30B23/00 ,  C30B23/08 ,  C30B29/40 ,  C30B29/68 ,  H01L21/203

Abstract: PURPOSE:To grow a standard crystal having exact mixed crystal compsn. ratios by determining the mixed crystal compsn. ratios of mixed crystals by the change, with time, in the intensity of the reflected electron diffraction image formed by a reflected electron beam diffraction device at the time of crystal growth in a vacuum. CONSTITUTION:The reflected electron beam diffraction device (RHEED) image projected on a screen 14 is formed on an X-Y stage 18 by a camera lens 16. The light at a suitable one point of this image is introduced by a fiber 17 to a photodetector 19, the output signal of which is supplied through an A/D converts 21 to a computer 22. On the other hand, the output signal of the photodetector 19 is outputted to a recorder 20 and is thereby monitored. A controller 23 is then operated in accordance with the command from the computer 22 to execute the control, etc., of the drawing out voltages, gas flow rates, etc., of shutters 8, main shutters 9 and ion guns 4 of respective sources 3. The mixed crystal compsn. ratios of the mixed crystals formed on the substrate 1 are exactly determined in this way by the change, with time, in the intensity of the above-mentioned diffraction image.