公开(公告)号：AU2002368046A1

公开(公告)日：2004-01-19

申请号：AU2002368046

申请日：2002-10-23

Applicant: ANALOG DEVICES INC

Inventor： COLLINS DAVID J ,  MARTIN JOHN R ,  WEBSTER WILLIAM A ,  FELTON LAWRENCE E ,  FARRELL PETER W ,  LUO JING

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/10

公开(公告)号：DE602005020148D1

公开(公告)日：2010-05-06

申请号：DE602005020148

申请日：2005-05-31

Applicant: ANALOG DEVICES INC

Inventor： MARTIN JOHN R ,  MENA MANOLO G ,  LACSAMANA ELMER S ,  DUFFY MICHAEL P ,  WEBSTER WILLIAM A ,  FELTON LAWRENCE E ,  KARPMAN MAURICE S

IPC: B81C1/00

Abstract: A method of producing a MEMS device removes the bottom side of a device wafer after its movable structure is formed. To that end, the method provides the device wafer, which has an initial bottom side. Next, the method forms the movable structure on the device wafer, and then removes substantially the entire initial bottom side of the device wafer. Removal of the entire initial bottom side effectively forms a final bottom side.

公开(公告)号：AU2002368046A8

公开(公告)日：2004-01-19

申请号：AU2002368046

申请日：2002-10-23

Applicant: ANALOG DEVICES INC

Inventor： WEBSTER WILLIAM A ,  COLLINS DAVID J ,  MARTIN JOHN R ,  FARRELL PETER W ,  LUO JING ,  FELTON LAWRENCE E

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/10

公开(公告)号：WO2004003965A3

公开(公告)日：2004-04-29

申请号：PCT/US0233811

申请日：2002-10-23

Applicant: ANALOG DEVICES INC

Inventor： FELTON LAWRENCE E ,  FARRELL PETER W ,  LUO JING ,  COLLINS DAVID J ,  MARTIN JOHN R ,  WEBSTER WILLIAM A

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/10

CPC classification number: B81B7/0077 ,  B81C1/00896 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A MEMS capping method and apparatus uses a cap structure on which is formed a MEMS cavity, a cut capture cavity, and a cap wall. The cap wall is essentially the outer wall of the MEMS cavity and the inner wall of the cut capture cavity. The cap structure is bonded onto a MEMS structure such that the MEMS cavity covers protected MEMS components. The cap structure is trimmed by cutting through to the cut capture cavity from the top of the cap structure without cutting all the way through to the MEMS structure.

Abstract translation: MEMS封盖方法和装置使用其上形成有MEMS腔体，切割捕获腔体和盖壁的盖结构。 帽壁基本上是MEMS腔的外壁和切割捕获腔的内壁。 帽结构被结合到MEMS结构上，使得MEMS腔覆盖受保护的MEMS部件。 通过从帽结构的顶部切割到切割捕获空腔而不切割到MEMS结构，修剪帽结构。