公开(公告)号：WO2011103062A2

公开(公告)日：2011-08-25

申请号：PCT/US2011/024762

申请日：2011-02-14

Applicant: ASM AMERICA, INC.

Inventor： SHERO, Eric ,  VERGHESE, Mohith ,  MUSCAT, Anthony ,  MILLER, Shawn

IPC: H01L21/316 ,  H01L21/205

CPC classification number: C23C16/45525 ,  B05D1/32 ,  B05D1/60 ,  B05D5/08 ,  B82Y30/00 ,  C23C16/04 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28194 ,  H01L29/517

Abstract: Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM (322) can be formed on surfaces (308) for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length (334) and a second SAM precursor having molecules of a second length (338) shorter than the first. Examples of exposed surfaces for which a mixed SAM (322) can be provided over include reactor surfaces and select surfaces of integrated circuit structures (800), such as insulator and dielectric layers.

Abstract translation: 描述了与形成用于防止反应器内的暴露表面上的不期望的生长或成核的混合SAM相关的方法和结构。 可以通过引入具有第一长度（334）的分子的第一SAM前体和具有第二长度（338）的分子的第二SAM前体，在表面（308）上形成混合的SAM（322） 比第一个。 可以提供混合SAM（322）的暴露表面的实例包括反应器表面和诸如绝缘体和电介质层的集成电路结构（800）的选择表面。