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公开(公告)号：WO2018106955A1
公开(公告)日：2018-06-14
申请号：PCT/US2017/065170
申请日：2017-12-07
Applicant: ASM IP HOLDING B.V. , ASM AMERICA, INC.
Inventor： BLOMBERG, Tom, E. , ZHU, Chiyu , TUOMINEN, Marko, J. , HAUKKA, Suvi, P. , SHARMA, Varun
IPC: H01L21/3065 , H01L29/20 , H01J37/32 , H01L21/306
Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.
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公开(公告)号：WO2017066059A1
公开(公告)日：2017-04-20
申请号：PCT/US2016/055496
申请日：2016-10-05
Applicant: ASM IP HOLDING B.V. , ASM AMERICA, INC.
Inventor： BLOMBERG, Tom, E. , HUOTARI, Hannu
IPC: H01L27/15 , H01L31/0256
CPC classification number: H01L31/02322 , C23C14/06 , C23C14/0694 , C23C16/22 , C23C16/30 , C23C16/45525 , H01L31/032 , H01L31/062 , H01L31/072 , H01L31/18 , H01L33/005 , H01L33/58 , H01L2933/0016 , H01L2933/0025 , Y02E10/50
Abstract: Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.
Abstract translation: 本文公开了用于在反应空间中在衬底上沉积包含介电过渡金属化合物相和导电或半导体过渡金属化合物相的薄膜的沉积方法。 沉积过程可以包括多个超级循环。 每个超级循环可以包括介电过渡金属化合物子循环和还原子循环。 介电过渡金属化合物子循环可以包括使衬底与介电过渡金属化合物接触。 还原子循环可以包括交替地和顺序地将衬底与还原剂和氮反应物接触。 薄膜可以包含嵌入导电或半导体过渡金属化合物相中的介电过渡金属化合物相。
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公开(公告)号：WO2015160499A1
公开(公告)日：2015-10-22
申请号：PCT/US2015/023492
申请日：2015-03-31
Applicant: ASM IP HOLDING B.V.
Inventor： BLOMBERG, Tom, E. , LINDROOS, Linda , HUOTARI, Hannu
IPC: C23C16/08
CPC classification number: H01L23/48 , C23C16/34 , C23C16/45527 , H01L21/28562 , H01L21/76841 , H01L21/76898 , H01L2924/0002 , H01L2924/0001
Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.
Abstract translation: 用于在衬底上沉积含氟薄膜的原子层沉积（ALD）工艺可以包括多个超级循环。 每个超级循环可以包括金属氟化物子循环和还原子循环。 金属氟化物子循环可以包括使基底与金属氟化物接触。 还原子循环可以包括交替地和顺序地将底物与还原剂和氮反应物接触。
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公开(公告)号：WO2011049816A2
公开(公告)日：2011-04-28
申请号：PCT/US2010/052741
申请日：2010-10-14
Applicant: ASM INTERNATIONAL N.V. , ASM AMERICA, INC. , BLOMBERG, Tom, E. , TOIS, Eva, E. , HUGGARE, Robert , MAES, Jan, Willem , MACHKAOUTSAN, Vladimir , PIERREUX, Dieter
Inventor： BLOMBERG, Tom, E. , TOIS, Eva, E. , HUGGARE, Robert , MAES, Jan, Willem , MACHKAOUTSAN, Vladimir , PIERREUX, Dieter
CPC classification number: C23C16/34 , C23C16/36 , C23C16/409 , C23C16/45531
Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.
Abstract translation: 本文公开了用于在对氯，溴和碘敏感的电介质材料上沉积包含氟的钝化层的方法。 钝化层可以保护敏感介电层，从而使得能够在钝化层上沉积使用包含氯，溴和碘的前体。
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