公开(公告)号：WO2015094549A2

公开(公告)日：2015-06-25

申请号：PCT/US2014/066310

申请日：2014-11-19

Applicant: ASM IP HOLDING B.V. ,  ASM AMERICA, INC.

Inventor： HAUKKA, Suvi, P. ,  TANG, Fu ,  GIVENS, Michael, E. ,  MAES, Jan, Willem ,  XIE, Qi

IPC: H01L21/02

CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜以循环方法沉积在反应空间中的基底上，其中至少一个循环包括交替地且顺序地使基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面中，提供了在衬底表面上形成三维结构的方法。 在一些实施例中，该方法包括在基板表面上形成金属硫化物薄膜并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

公开(公告)号：WO2019142176A1

公开(公告)日：2019-07-25

申请号：PCT/IB2019/050974

申请日：2019-02-07

Applicant: ASM IP HOLDING B.V.

Inventor： ZHU, Chiyu ,  JUSSILA, Henri ,  XIE, Qi

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/285

Abstract: There is provided a method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：WO2015094551A1

公开(公告)日：2015-06-25

申请号：PCT/US2014/066316

申请日：2014-11-19

Applicant: ASM IP HOLDING B.V.

Inventor： HAUKKA, Suvi, P. ,  TANG, Fu ,  GIVENS, Michael, E. ,  MAES, Jan, William ,  XIE, Qi

IPC: C23C16/06

CPC classification number: H01L21/02175 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/78

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜在循环过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面，提供了在衬底表面上形成三维结构的方法。 在一些实施方案中，该方法包括在基材表面上形成金属硫化物薄膜，并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。