中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.034 seconds)

    SULFUR-CONTAINING THIN FILMS
    1.
    发明申请
    SULFUR-CONTAINING THIN FILMS 审中-公开
    含硫薄膜

    公开(公告)号：WO2015094549A2

    公开(公告)日：2015-06-25

    申请号：PCT/US2014/066310

    申请日：2014-11-19

    Applicant: ASM IP HOLDING B.V. ,  ASM AMERICA, INC.

    Inventor： HAUKKA, Suvi, P. ,  TANG, Fu ,  GIVENS, Michael, E. ,  MAES, Jan, Willem ,  XIE, Qi

    IPC: H01L21/02

    CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

    Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜以循环方法沉积在反应空间中的基底上，其中至少一个循环包括交替地且顺序地使基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面中，提供了在衬底表面上形成三维结构的方法。 在一些实施例中，该方法包括在基板表面上形成金属硫化物薄膜并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

    SULFUR-CONTAINING THIN FILMS
    2.
    发明申请
    SULFUR-CONTAINING THIN FILMS 审中-公开
    含硫的薄膜

    公开(公告)号：WO2015094551A1

    公开(公告)日：2015-06-25

    申请号：PCT/US2014/066316

    申请日：2014-11-19

    Applicant: ASM IP HOLDING B.V.

    Inventor： HAUKKA, Suvi, P. ,  TANG, Fu ,  GIVENS, Michael, E. ,  MAES, Jan, William ,  XIE, Qi

    IPC: C23C16/06

    CPC classification number: H01L21/02175 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/78

    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

    Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜在循环过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面，提供了在衬底表面上形成三维结构的方法。 在一些实施方案中，该方法包括在基材表面上形成金属硫化物薄膜，并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

    INTEGRATION OF HIGH K GATE DIELECTRIC
    4.
    发明申请
    INTEGRATION OF HIGH K GATE DIELECTRIC 审中-公开
    高K门电介质的集成

    公开(公告)号：WO2002065525A1

    公开(公告)日：2002-08-22

    申请号：PCT/US2002/004745

    申请日：2002-02-12

    Applicant: ASM AMERICA, INC.

    Inventor： POMAREDE, Christophe ,  GIVENS, Michael, E. ,  SHERO, Eric, J. ,  TODD, Michael, A.

    IPC: H01L21/28

    CPC classification number: H01L21/28194 ,  B82Y10/00 ,  C23C16/0272 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28525 ,  H01L21/28556 ,  H01L29/4925 ,  H01L29/517 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Methods are provided herein for forming electrode layers over high dielectric constant ("high k") materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is first formed (70) and then protected from reduction during a subsequent deposition (79) of silicon-containing gate electrode. In particular, a seed deposition phase (74) includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably altered (76) for higher deposition rates and deposition continues in a bulk phase (78). Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, a higher order silanes, such as disilane and trisilane, aid in reducing hydrogen content for a given deposition rate.

    Abstract translation: 本文提供了用于在高介电常数（“高k”）材料上形成电极层的方法。 在所示实施例中，首先形成高k栅极电介质，例如氧化锆，然后在随后的含硅栅电极的沉积（79）期间保护不被还原。 特别地，种子沉积阶段（74）包括设计用于最小化栅极电介质的氢还原的条件，包括硅源气体的低氢含量，低温和/或低分压。 优选改变条件（76）以获得更高的沉积速率，并且在体相中继续沉积（78）。 然而，尽管通过控制上述参数仍然使氢扩散最小化。 在一个实施例中，通过省略氢载体气体来最小化高k电介质的减小。 在另一个实施方案中，高级硅烷如乙硅烷和丙硅烷可有助于降低给定沉积速率的氢含量。

    SUBLIMATION SYSTEM EMPLOYING CARRIER GAS
    5.
    发明公开
    SUBLIMATION SYSTEM EMPLOYING CARRIER GAS 审中-公开
    与运营商气升华

    公开(公告)号：EP1525337A2

    公开(公告)日：2005-04-27

    申请号：EP03772108.1

    申请日：2003-07-29

    Applicant: ASM America, Inc.

    Inventor： SHERO, Eric, J. ,  GIVENS, Michael, E. ,  SCHMIDT, Ryan

    IPC: C23C16/448

    CPC classification number: C23C16/45544 ,  C23C16/4481 ,  C23C16/4483

    Abstract: Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium (60) onto which a solid source material (7) for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.

Patent Agency Ranking