公开(公告)号：US20240071748A1

公开(公告)日：2024-02-29

申请号：US18238063

申请日：2023-08-25

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  SungHa Choi ,  JuHyuk Park ,  KiHun Kim ,  JiHye Yang

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing method includes providing, in a reaction space, a substrate including two gaps in a surface thereof, and filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space, wherein a difference of filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced by adjusting a pulse frequency of pulsed plasma.