公开(公告)号：US20210327714A1

公开(公告)日：2021-10-21

申请号：US17233382

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US12020934B2

公开(公告)日：2024-06-25

申请号：US17233384

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0228 ,  H01L21/31144

Abstract: A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.

公开(公告)号：US11658035B2

公开(公告)日：2023-05-23

申请号：US17358860

申请日：2021-06-25

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/305

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01L21/308

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.

公开(公告)号：US20220013358A1

公开(公告)日：2022-01-13

申请号：US17233384

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

Abstract: A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.

公开(公告)号：US20250157819A1

公开(公告)日：2025-05-15

申请号：US19018312

申请日：2025-01-13

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US20230395370A1

公开(公告)日：2023-12-07

申请号：US18205089

申请日：2023-06-02

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee

IPC: H01L21/02

CPC classification number: H01L21/02304 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/02167

Abstract: Provided is a substrate processing method for preventing a conductive layer from being oxidized due to activated oxygen gas when filling a gap contacting a conductive layer with oxide film. In an embodiment, a high frequency RF power and a low frequency RF power may be applied to form a dense protective layer in the lower portion of the gap and prevent the activated oxygen gas from reacting with and oxidizing the conductive layer when forming an insulating layer on the protective layer. In another embodiment, a film conversion gas and an inhibiting gas may be supplied to improve a step coverage of the protective layer and a uniform blocking to the activated oxygen gas into the conductive layer along the surface of the gap.

公开(公告)号：US20220267903A1

公开(公告)日：2022-08-25

申请号：US17677287

申请日：2022-02-22

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/52

Abstract: Methods for forming phosphosilicate glass layers are disclosed. Exemplary methods include forming a silicon-containing layer overlying the substrate and depositing a phosphorus-containing layer overlying the substrate. The deposited phosphorus-containing layer can include P2O3 and/or exhibit a melting temperature less than or equal to 500° C. The deposited phosphorus-containing layer can be heated to flow and oxidized to provide desired properties.

公开(公告)号：US20220068647A1

公开(公告)日：2022-03-03

申请号：US17460673

申请日：2021-08-30

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  YeaHyun Gu ,  Hyunchul Kim ,  Naoki Inoue

IPC: H01L21/033 ,  H01J37/32 ,  C23C16/455

Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include using a plasma-enhanced cyclical deposition process to form a transformable layer including a first material and exposing the transformable layer to energy to form a second material. The first or second material can be selectively etched relative to the other of the first and second material.

公开(公告)号：US20210407813A1

公开(公告)日：2021-12-30

申请号：US17358860

申请日：2021-06-25

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/3065 ,  H01J37/305 ,  H01L21/308

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.