公开(公告)号：US20250157819A1

公开(公告)日：2025-05-15

申请号：US19018312

申请日：2025-01-13

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US20220068647A1

公开(公告)日：2022-03-03

申请号：US17460673

申请日：2021-08-30

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  YeaHyun Gu ,  Hyunchul Kim ,  Naoki Inoue

IPC: H01L21/033 ,  H01J37/32 ,  C23C16/455

Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include using a plasma-enhanced cyclical deposition process to form a transformable layer including a first material and exposing the transformable layer to energy to form a second material. The first or second material can be selectively etched relative to the other of the first and second material.

公开(公告)号：US20210407813A1

公开(公告)日：2021-12-30

申请号：US17358860

申请日：2021-06-25

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/3065 ,  H01J37/305 ,  H01L21/308

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.

公开(公告)号：US12154824B2

公开(公告)日：2024-11-26

申请号：US17399049

申请日：2021-08-11

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US20240026532A1

公开(公告)日：2024-01-25

申请号：US18222012

申请日：2023-07-14

Applicant: ASM IP Holding B.V.

Inventor： YeaHyun Gu ,  KwangMan Ko ,  HyunChul Kim ,  HakJoo Lee ,  Takahiro Arai ,  Hiroshi Kou

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/45553 ,  C23C16/56 ,  C23C16/402 ,  C23C16/405

Abstract: Provided is a method for forming a TiO2—SiO2 laminated layer for suppressing a crystallization of TiO2 layer. In one embodiment, a TiO2—SiO2 laminated layer may be formed by alternately forming and stacking a TiO2 layer and a SiO2 layer by plasma atomic layer deposition. A TiO2—SiO2 laminated layer has a high film strength compared to the conventional SiO2 layer and a crystallization of TiO2 layer is suppressed by forming a laminated layer and controlling a cycle ratio of the step of forming a TiO2 layer to the step of forming a SiO2 layer.

公开(公告)号：US20210327714A1

公开(公告)日：2021-10-21

申请号：US17233382

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US20250038048A1

公开(公告)日：2025-01-30

申请号：US18912027

申请日：2024-10-10

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US12020934B2

公开(公告)日：2024-06-25

申请号：US17233384

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0228 ,  H01L21/31144

Abstract: A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.

公开(公告)号：US11658035B2

公开(公告)日：2023-05-23

申请号：US17358860

申请日：2021-06-25

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/305

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01L21/308

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.

公开(公告)号：US20220013358A1

公开(公告)日：2022-01-13

申请号：US17233384

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

Abstract: A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.