公开(公告)号：US20200002812A1

公开(公告)日：2020-01-02

申请号：US16454063

申请日：2019-06-27

Applicant: ASM IP Holding B.V.

Inventor： ManSu Lee ,  SungKyu Kang ,  EunSook Lee ,  MinSoo Kim ,  SeungWoo Choi

IPC: C23C16/455 ,  H01L21/033

Abstract: A method of depositing a thin film having a desired etching characteristic while improving a loss amount and loss uniformity of a lower film includes, on the semiconductor substrate and the pattern structure: a first operation of depositing a portion of the thin film by repeating a first cycle comprising (a1) a source gas supply operation, (b1) a reactant gas supply operation, and (c1) a plasma supply operation for a certain number of times; a second operation of depositing a remaining portion of the thin film by repeating a second cycle comprising (a2) a source gas supply operation, (b2) a reactant gas supply operation, and (c2) a plasma supply operation for a certain number of times after the first operation, wherein a supply time of the source gas supply operation (a1) is longer than a supply time of the source gas supply operation (a2).

公开(公告)号：US20210407813A1

公开(公告)日：2021-12-30

申请号：US17358860

申请日：2021-06-25

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/3065 ,  H01J37/305 ,  H01L21/308

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.

公开(公告)号：US20250157819A1

公开(公告)日：2025-05-15

申请号：US19018312

申请日：2025-01-13

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US12154824B2

公开(公告)日：2024-11-26

申请号：US17399049

申请日：2021-08-11

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US20210327714A1

公开(公告)日：2021-10-21

申请号：US17233382

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US20250038048A1

公开(公告)日：2025-01-30

申请号：US18912027

申请日：2024-10-10

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US12020934B2

公开(公告)日：2024-06-25

申请号：US17233384

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0228 ,  H01L21/31144

Abstract: A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.

公开(公告)号：US20230392278A1

公开(公告)日：2023-12-07

申请号：US18235589

申请日：2023-08-18

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  YongMin Yoo ,  SeungWoo Choi ,  DongSeok Kang ,  JongWon Shon

IPC: C25D11/04 ,  C23C16/44 ,  C25D11/02 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32 ,  C23C16/455

CPC classification number: C25D11/04 ,  C23C16/4404 ,  C23C16/4409 ,  C25D11/022 ,  H01L21/68735 ,  H01L21/6719 ,  C23C16/4583 ,  C23C16/5096 ,  H01J37/3244 ,  C23C16/45525 ,  H01J37/32715 ,  H01L21/68757 ,  C23C16/4412 ,  H01J37/32477

Abstract: A substrate supporting plate that provides improved processing uniformity is disclosed. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. A portion of the peripheral portion may include an insulating layer. A central portion of the top surface may not include the insulating layer.

公开(公告)号：US11658035B2

公开(公告)日：2023-05-23

申请号：US17358860

申请日：2021-06-25

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/305

CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01L21/308

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.

公开(公告)号：US20220013358A1

公开(公告)日：2022-01-13

申请号：US17233384

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

Abstract: A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.