Metrology method and apparatus, lithographic system and device manufacturing method

    公开(公告)号:US10126662B2

    公开(公告)日:2018-11-13

    申请号:US15912036

    申请日:2018-03-05

    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

    Metrology method and apparatus, computer program and lithographic system

    公开(公告)号:US09869940B2

    公开(公告)日:2018-01-16

    申请号:US15133866

    申请日:2016-04-20

    CPC classification number: G03F7/70633 G01B11/24 G01B11/272

    Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

    Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method

    公开(公告)号:US20180196357A1

    公开(公告)日:2018-07-12

    申请号:US15912036

    申请日:2018-03-05

    CPC classification number: G03F7/70633

    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

    Lithographic apparatus and device manufacturing method
    10.
    发明授权
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号:US09383655B2

    公开(公告)日:2016-07-05

    申请号:US14541037

    申请日:2014-11-13

    Abstract: An immersion lithography apparatus comprises a temperature controller configured to adjust a temperature of a projection system, a substrate and a liquid towards a common target temperature. Controlling the temperature of these elements and reducing temperature gradients may improve imaging consistency and general lithographic performance. Measures to control the temperature may include controlling the immersion liquid flow rate and liquid temperature, for example, via a feedback circuit.

    Abstract translation: 浸没式光刻设备包括温度控制器,该温度控制器被配置为朝向共同的目标温度调节投影系统,基板和液体的温度。 控制这些元件的温度并降低温度梯度可以提高成像的一致性和一般的光刻性能。 控制温度的措施可以包括例如经由反馈电路来控制浸没液体流速和液体温度。

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