公开(公告)号：WO2020108902A1

公开(公告)日：2020-06-04

申请号：PCT/EP2019/079562

申请日：2019-10-29

Applicant: ASML NETHERLANDS B.V.

Inventor： BISWAS, Roshni ,  HOWELL, Rafael C. ,  ZHANG, Cuiping ,  JIA, Ningning ,  LIU, Jingjing ,  ZHANG, Quan

IPC: G03F1/36 ,  G03F7/20

Abstract: Described herein is a method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

公开(公告)号：WO2018121967A1

公开(公告)日：2018-07-05

申请号：PCT/EP2017/081744

申请日：2017-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： CAO, Yu ,  LU, Yen-Wen ,  LIU, Peng ,  HOWELL, Rafael C. ,  BISWAS, Roshni

IPC: G03F7/20 ,  G03F1/36

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.