公开(公告)号：WO2019158682A1

公开(公告)日：2019-08-22

申请号：PCT/EP2019/053785

申请日：2019-02-15

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  LIU, Jingjing ,  HOWELL, Rafael C. ,  PENG, Xingyue

IPC: G03F1/36 ,  G06F17/50

Abstract: Described herein is a method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, (ii) an initial continuous tone image of the patterning device corresponding to the target pattern, (iii) a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and (iv) a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating, by a hardware computer system, a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.

公开(公告)号：WO2021249720A1

公开(公告)日：2021-12-16

申请号：PCT/EP2021/062795

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： PENG, Xingyue ,  SHI, Zhan ,  HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Gerui

IPC: G03F7/20 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70891

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process is described. Scanner aberration impact modeling may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model comprises a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form in lieu of a full simulation without involving calculation of an aerial image or a representation thereof.

公开(公告)号：WO2019162346A1

公开(公告)日：2019-08-29

申请号：PCT/EP2019/054246

申请日：2019-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： CAO, Yu ,  LUO, Ya ,  LU, Yen-Wen ,  CHEN, Been-Der ,  HOWELL, Rafael C. ,  ZOU, Yi ,  SU, Jing ,  SUN, Dezheng

IPC: G06N20/00 ,  G03F1/36 ,  G06N3/04 ,  G06N3/08 ,  G06F17/50

Abstract: Described herein are different methods of training machine learning models related to a patterning process. Described herein is a method for training a machine learning model configured to predict a mask pattern. The method including obtaining (i) a process model of a patterning process configured to predict a pattern on a substrate, wherein the process model comprises one or more trained machine learning models, and (ii) a target pattern, and training, by a hardware computer system, the machine learning model configured to predict a mask pattern based on the process model and a cost function that determines a difference between the predicted pattern and the target pattern.

公开(公告)号：WO2018138123A1

公开(公告)日：2018-08-02

申请号：PCT/EP2018/051669

申请日：2018-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： FENG, Mu ,  SHAYEGAN SALEK, Mir Farrokh ,  ZHU, Dianwen ,  ZHENG, Leiwu ,  HOWELL, Rafael C. ,  WANG, Jen-Shiang

IPC: G03F7/20

Abstract: Disclosed herein are methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust the parameters of the process model.

公开(公告)号：WO2022248217A1

公开(公告)日：2022-12-01

申请号：PCT/EP2022/062691

申请日：2022-05-10

Applicant: ASML NETHERLANDS B.V.

Inventor： PENG, Xingyue ,  HOWELL, Rafael C. ,  LU, Yen-Wen ,  CHEN, Xiaorui

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20 ,  G06F30/398 ,  G06T7/00

Abstract: Described herein are methods and systems for determining mask rule check violations (MRC) associated with mask features using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.

公开(公告)号：WO2020002143A1

公开(公告)日：2020-01-02

申请号：PCT/EP2019/066446

申请日：2019-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  HENNERKES, Christoph, Rene, Konrad, Cebulla ,  HOWELL, Rafael C. ,  SHI, Zhan ,  LI, Xiaoyang ,  STAALS, Frank

IPC: G03F7/20

Abstract: Described herein is a method for determining a wavefront of a patterning apparatus of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model of a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movements, and a lens fingerprint of a tuning scanner (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., wavefront parameters such as tilt, offset, etc.) based on the lens fingerprint of the tuning scanner, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning scanner performance.

公开(公告)号：WO2019179747A1

公开(公告)日：2019-09-26

申请号：PCT/EP2019/055067

申请日：2019-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Quan ,  CHEN, Been-Der ,  HOWELL, Rafael C. ,  SU, Jing ,  ZOU, Yi ,  LU, Yen-Wen

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20 ,  G06F17/50

Abstract: Described herein is a method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

公开(公告)号：WO2016192964A1

公开(公告)日：2016-12-08

申请号：PCT/EP2016/060891

申请日：2016-05-13

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  JIA, Jianjun

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70125 ,  G06F17/5036 ,  G06F2217/12

Abstract: Disclosed herein is a computer-implemented method including: determining a first partial image formed from a first radiation portion propagating along a first group of one or more directions, by a lithographic projection apparatus; determining a second partial image formed from a second radiation portion propagating along a second group of one or more directions, by the lithographic projection apparatus; determining an image by incoherently adding the first partial image and the second partial image; wherein the first group of one or more directions and the second group of one or more directions are different.

Abstract translation: 这里公开了一种计算机实现的方法，包括：通过光刻投影设备确定由沿一个或多个方向的第一组传播的第一辐射部分形成的第一部分图像; 确定由沿着一个或多个方向的第二组传播的第二辐射部分由光刻投影装置形成的第二部分图像; 通过非相干地添加所述第一部分图像和所述第二部分图像来确定图像; 其中一个或多个方向的第一组和一个或多个方向的第二组是不同的。

公开(公告)号：WO2015158444A1

公开(公告)日：2015-10-22

申请号：PCT/EP2015/053099

申请日：2015-02-13

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Xiaofeng

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70

CPC classification number: G03F7/70641 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70191 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70558

Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illumination source and projection optics, the method comprising: obtaining a source shape and a mask defocus value; optimizing a dose of the lithographic process; optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

Abstract translation: 本文公开了一种计算机实现的方法，用于使用包括照明源和投影光学器件的光刻投影设备来改进用于将设计布局的一部分成像到基板上的光刻处理，该方法包括：获得源形状和掩模散焦值 ; 优化光刻工艺的剂量; 优化照明源的多个狭缝位置中的每一个的设计布局的部分。

公开(公告)号：WO2014127986A1

公开(公告)日：2014-08-28

申请号：PCT/EP2014/052110

申请日：2014-02-04

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Xiaofeng ,  HOWELL, Rafael C.

IPC: G03F7/20

CPC classification number: G03F7/2008 ,  G03F7/70116 ,  G03F7/70125 ,  G03F7/705 ,  G03F7/70508

Abstract: Disclosed herein is a computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising: providing a desired pupil profile; calculating a discrete pupil profile based on the desired pupil profile; selecting a discrete change to the discrete pupil profile; and applying the selected discrete change to the discrete pupil profile. The methods according to various embodiments disclosed herein may reduce the computational cost of discrete optimization from O(a n ) to O(n) wherein a is constant and n is the number of knobs that can generate discrete change in the pupil profile.

Abstract translation: 本文公开了一种用于改进光刻处理的计算机实现的方法，用于使用光刻投影设备将设计布局的一部分成像到基板上，该方法包括：提供期望的瞳孔轮廓; 基于所需的瞳孔轮廓来计算离散的瞳孔轮廓; 选择离散瞳孔轮廓的离散变化; 以及将所选择的离散变化应用于离散光瞳轮廓。 根据本文公开的各种实施例的方法可以将离散优化的计算成本从O（a）减小到O（n），其中a是常数，n是可以在瞳孔轮廓中产生离散变化的旋钮的数量。