公开(公告)号：WO2021083608A1

公开(公告)日：2021-05-06

申请号：PCT/EP2020/077611

申请日：2020-10-01

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Qiang ,  GUO, Yunbo ,  CAO, Yu ,  WANG, Jen-Shiang ,  LU, Yen-Wen ,  CHEN, Danwu ,  YANG, Pengcheng ,  LIANG, Haoyi ,  CHEN, Zhichao ,  PU, Lingling

IPC: G03F7/20

Abstract: A method for training a machine learning model to generate a predicted measured image includes obtaining (a) an input target image associated with a reference design pattern, and (b) a reference measured image associated with a specified design pattern printed on a substrate, wherein the input target image and the reference measured image are non-aligned images; and training, by a hardware computer system and using the input target image, the machine learning model to generate a predicted measured image.

公开(公告)号：WO2018104073A1

公开(公告)日：2018-06-14

申请号：PCT/EP2017/080324

申请日：2017-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： LU, Yen-Wen ,  CHEN, Xiaorui ,  LIN, Yang

IPC: G03F7/20 ,  G06F17/50 ,  G05B19/418

CPC classification number: G03F7/70483 ,  G03F7/70491 ,  G03F7/70525 ,  G05B19/418 ,  G05B19/41875 ,  G06F17/5009 ,  Y02P90/265

Abstract: A method of controlling a computer process for designing or verifying a photolithographic component includes building a source tree comprising nodes of the process, including dependency relationships among the nodes, defining, for some nodes, at least two different process conditions, expanding the source tree to form an expanded tree, including generating a separate node for each different defined process condition, and duplicating dependent nodes having an input relationship to each generated separate node, determining respective computing hardware requirements for processing the node, selecting computer hardware constraints based on capabilities of the host computing system, determining, based on the requirements and constraints and on dependency relations in the expanded tree, an execution sequence for the computer process, and performing the computer process on the computing system.

公开(公告)号：WO2021115766A1

公开(公告)日：2021-06-17

申请号：PCT/EP2020/082995

申请日：2020-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Quan ,  CHOW, Tatung ,  CHEN, Been-Der ,  LU, Yen-Wen

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20 ,  G06N20/00

Abstract: Described herein is a method (400) of determining a mask pattern for a target pattern to be printed on a substrate. The method includes partitioning (P401) a portion of a design layout (401) including the target pattern into a plurality of cells (402) with reference to a given location on the target pattern; assigning (P403) a plurality of variables (403) within a particular cell of the plurality of cells, the particular cell including the target pattern or a portion thereof; and determining (P405), based on values of the plurality of variables, the mask pattern (405) for the target pattern such that a performance metric of a patterning process utilizing the mask pattern is within a desired performance range.

公开(公告)号：WO2016078861A1

公开(公告)日：2016-05-26

申请号：PCT/EP2015/074450

申请日：2015-10-22

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Guangqing ,  BAI, Shufeng ,  KENT, Eric, Richard ,  LU, Yen-Wen ,  TUFFY, Paul, Anthony ,  WANG, Jen-Shiang ,  ZHANG, Youping ,  ZWARTJES, Gertjan ,  BIJLSMA, Jan, Wouter

IPC: G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70633 ,  G03F7/70683 ,  G06F17/12 ,  G06F17/14

Abstract: The present disclosure teaches methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. The methodology is referred to as "Design for Control". Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical wafer processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than "building" the device geometry element-by-element.

Abstract translation: 本公开教导了用于自动生成可容纳各种光刻处理和处理扰动的鲁棒测量目标的方法和系统。 该方法被称为“控制设计”。 整个光刻过程的各个步骤被建模为单个过程序列以模拟物理晶片处理。 该过程顺序驱动了整体的三维设备几何的创建，而不是逐个“构建”设备几何。

公开(公告)号：WO2023088649A1

公开(公告)日：2023-05-25

申请号：PCT/EP2022/079894

申请日：2022-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： CHENG, Jin ,  CHEN, Feng ,  ZHENG, Leiwu ,  FAN, Yongfa ,  LU, Yen-Wen ,  WANG, Jen-Shiang ,  MA, Ziyang ,  ZHU, Dianwen ,  CHEN, Xi ,  ZHAO, Yu

IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering the curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.

公开(公告)号：WO2021259738A1

公开(公告)日：2021-12-30

申请号：PCT/EP2021/066323

申请日：2021-06-17

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Jen-Shiang ,  YANG, Pengcheng ,  HUANG, Jiao ,  LU, Yen-Wen ,  LIU, Liang ,  ZHANG, Chen

IPC: G03F7/20 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705

Abstract: Described herein is a method for determining a likelihood that an assist feature of a mask pattern will print on a substrate. The method includes obtaining (i) a plurality of images of a pattern printed on a substrate and (ii) variance data the plurality of images of the pattern; determining, based on the variance data, a model configured to generate variance data associated with the mask pattern; and determining, based on model-generated variance data for a given mask pattern and a resist image or etch image associated with the given mask pattern, the likelihood that an assist feature of the given mask pattern will be printed on the substrate. The likelihood can be applied to adjust one or more parameters related to a patterning process or a patterning apparatus to reduce the likelihood that the assist feature will print on the substrate.

公开(公告)号：WO2019162346A1

公开(公告)日：2019-08-29

申请号：PCT/EP2019/054246

申请日：2019-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： CAO, Yu ,  LUO, Ya ,  LU, Yen-Wen ,  CHEN, Been-Der ,  HOWELL, Rafael C. ,  ZOU, Yi ,  SU, Jing ,  SUN, Dezheng

IPC: G06N20/00 ,  G03F1/36 ,  G06N3/04 ,  G06N3/08 ,  G06F17/50

Abstract: Described herein are different methods of training machine learning models related to a patterning process. Described herein is a method for training a machine learning model configured to predict a mask pattern. The method including obtaining (i) a process model of a patterning process configured to predict a pattern on a substrate, wherein the process model comprises one or more trained machine learning models, and (ii) a target pattern, and training, by a hardware computer system, the machine learning model configured to predict a mask pattern based on the process model and a cost function that determines a difference between the predicted pattern and the target pattern.

公开(公告)号：WO2019048506A1

公开(公告)日：2019-03-14

申请号：PCT/EP2018/073914

申请日：2018-09-05

Applicant: ASML NETHERLANDS B.V.

Inventor： SU, Jing ,  LU, Yen-Wen ,  LUO, Ya

IPC: G03F7/20 ,  G03F1/36 ,  G06F17/50 ,  G06N99/00

Abstract: A method including: obtaining an optical proximity correction for a spatially shifted version of a training design pattern (5000); and training a machine learning model (5200) configured to predict optical proximity corrections for design patterns using data (5051; 5053) regarding the spatially shifted version of the training design pattern and data (5041; 5043) based on the optical proximity corrections for the spatially shifted version of the training design pattern.

公开(公告)号：WO2019233711A1

公开(公告)日：2019-12-12

申请号：PCT/EP2019/062271

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, Jen-Shiang ,  ZHAO, Qian ,  GUO, Yunbo ,  LU, Yen-Wen ,  FENG, Mu ,  ZHANG, Qiang

IPC: G03F7/20

Abstract: A method for improving a process model for a patterning process includes obtaining a) a measured contour (330) from an image capture device, and b) a simulated contour (510) generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：WO2018153735A1

公开(公告)日：2018-08-30

申请号：PCT/EP2018/053589

申请日：2018-02-13

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Peng ,  LUO, Ya ,  CAO, Yu ,  LU, Yen-Wen

IPC: G03F7/20 ,  G06F17/50

Abstract: A method including: obtaining characteristics of a portion of a design layout; determining characteristics of M3D of a patterning device including or forming the portion; by using a computer, training a neural network using training data including a sample whose feature vector includes the characteristics of the portion and whose supervisory signal comprises the characteristics of the M3D. Also disclosed is a method including: obtaining characteristics of a portion of a design layout; obtaining characteristics of a lithographic process that uses a patterning device including or forming the portion; determining characteristics of a result of the lithographic process; by using a computer, training a neural network using training data including a sample whose feature vector comprises the characteristics of the portion and the characteristics of the lithographic process, and whose supervisory signal comprises the characteristics of the result.