公开(公告)号：WO2018153872A1

公开(公告)日：2018-08-30

申请号：PCT/EP2018/054175

申请日：2018-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  LIU, Jingjing

IPC: G03F1/24 ,  G03F1/36 ,  G03F1/38

Abstract: A patterning device (100), includes: an absorber layer (106) on a patterning device substrate (102); and a reflective or transmissive layer (104) on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature (112) and an attenuated sub-resolution assist feature (110) paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.

公开(公告)号：WO2021043596A1

公开(公告)日：2021-03-11

申请号：PCT/EP2020/073448

申请日：2020-08-21

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Jingjing ,  HSU, Duan-Fu, Stephen ,  PENG, Xingyue

IPC: G03F7/20

Abstract: Described herein is a method (300) for determining process window limiting patterns (PWLP) based on aberration sensitivity associated with a patterning apparatus. The method includes (P301) obtaining (i) a first set of kernels (301) and a second set of kernels (302) associated with an aberration wavefront of the patterning apparatus and (ii) a design layout (303) to be printed on a substrate via the patterning apparatus; and determining (P303), via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map (310) associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining (P305), based on the aberration sensitivity map, the PWLP (315) associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

公开(公告)号：WO2020108902A1

公开(公告)日：2020-06-04

申请号：PCT/EP2019/079562

申请日：2019-10-29

Applicant: ASML NETHERLANDS B.V.

Inventor： BISWAS, Roshni ,  HOWELL, Rafael C. ,  ZHANG, Cuiping ,  JIA, Ningning ,  LIU, Jingjing ,  ZHANG, Quan

IPC: G03F1/36 ,  G03F7/20

Abstract: Described herein is a method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

公开(公告)号：WO2019214909A1

公开(公告)日：2019-11-14

申请号：PCT/EP2019/059741

申请日：2019-04-16

Applicant: ASML NETHERLANDS B.V.

Inventor： PENG, Xingyue ,  LIU, Jingjing

IPC: G03F7/20

Abstract: Described herein is a method for determining electromagnetic fields associated with a mask model of a patterning process. The method comprises obtaining a mask stack region of interest and an interaction order corresponding to the mask stack region of interest. The mask stack region of interest is divided into sub regions. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The method comprises generating one or more electromagnetic field determination expressions based on the Maxwell Equations and the Quantum Schrodinger Equation. The method comprises determining an electromagnetic field associated with the mask stack region of interest based on the sub regions of the mask stack region of interest and the characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest, using the one or more electromagnetic field determination expressions.

公开(公告)号：WO2019158682A1

公开(公告)日：2019-08-22

申请号：PCT/EP2019/053785

申请日：2019-02-15

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  LIU, Jingjing ,  HOWELL, Rafael C. ,  PENG, Xingyue

IPC: G03F1/36 ,  G06F17/50

Abstract: Described herein is a method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, (ii) an initial continuous tone image of the patterning device corresponding to the target pattern, (iii) a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and (iv) a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating, by a hardware computer system, a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.

公开(公告)号：WO2017178276A1

公开(公告)日：2017-10-19

申请号：PCT/EP2017/057931

申请日：2017-04-04

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  LIU, Jingjing

IPC: G03F1/36 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F1/16 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70441 ,  G06F17/5009

Abstract: Disclosed herein is a method comprising: obtaining at least a clip of a design layout; and determining a representation of the clip on a patterning device, under a condition that a reduction ratio from the representation to the clip is anisotropic. In a further embodiment of the method, the method comprises: obtaining a relationship between a first geometric characteristic in a design layout or an image thereof, and a second geometric characteristic in a representation of the design layout on a patterning device, wherein the relationship is a function involving reduction ratios in two different directions.

Abstract translation: 这里公开了一种方法，包括：获得设计布局的至少一个剪辑; 以及在从所述表示到所述剪辑的缩减率是各向异性的条件下，确定所述剪辑在图案形成装置上的表示。 在该方法的另一实施例中，该方法包括：获得设计布局或其图像中的第一几何特征与图案形成装置上的设计布局的表示中的第二几何特征之间的关系，其中关系为 一个涉及两个不同方向的缩小比率的功能。