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    DETERMINING EDGE ROUGHNESS PARAMETERS
    1.
    发明申请
    DETERMINING EDGE ROUGHNESS PARAMETERS 审中-公开

    公开(公告)号：WO2018233947A1

    公开(公告)日：2018-12-27

    申请号：PCT/EP2018/062778

    申请日：2018-05-16

    Applicant: ASML NETHERLANDS B.V.

    Inventor： JAK, Martin Jacobus Johan ,  QUINTANILHA, Richard ,  DEN BOEF, Arie Jeffrey ,  KUBIS, Michael

    IPC: G03F7/20

    Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth / pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

    METHOD AND APPARATUS FOR MEASURING LINE END SHORTENING, SUBSTRATE AND PATTERNING DEVICE
    4.
    发明申请
    METHOD AND APPARATUS FOR MEASURING LINE END SHORTENING, SUBSTRATE AND PATTERNING DEVICE 审中-公开
    用于测量线端部封装，基板和图案装置的方法和装置

    公开(公告)号：WO2009130010A1

    公开(公告)日：2009-10-29

    申请号：PCT/EP2009/002915

    申请日：2009-04-22

    Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie Jeffrey ,  VAN HAREN, Richard Johannes Franciscus ,  VAN DE KERKHOF, Marcus Adrianus

    Inventor： VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie Jeffrey ,  VAN HAREN, Richard Johannes Franciscus ,  VAN DE KERKHOF, Marcus Adrianus

    IPC: G03F7/20

    CPC classification number: G03F7/70683 ,  G01N21/95607 ,  G03F1/0092 ,  G03F1/14 ,  G03F1/44 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/70641

    Abstract: End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

    Abstract translation: 在使用光刻设备的部件的制造期间可能发生线路效应的结束。 这些线路效应的结束可能导致正在制造的功能的线端缩短。 这种线端缩短可能对正在制造的部件产生不利影响。 因此，希望预测和/或监视线端缩短。 提供了具有两个独立区域的测试图案，使得如设计的那样，当两个区域被辐射照射时（例如，从角度分辨的散射仪）照射，它们导致具有彼此相等的不对称性的漫射辐射， 但在数量上相反。 当实际制造测试图形时，发生线端缩短，因此两个区域的不对称性不相等。 根据制造的测试图案的测量不对称性，可以估计发生的线端缩短量。

    RECIPE SELECTION BASED ON INTER-RECIPE CONSISTENCY
    6.
    发明公开
    RECIPE SELECTION BASED ON INTER-RECIPE CONSISTENCY 审中-公开
    基于相互间相容性的配方选择

    公开(公告)号：EP3311224A1

    公开(公告)日：2018-04-25

    申请号：EP16728320.9

    申请日：2016-06-10

    Applicant: ASML Netherlands B.V.

    Inventor： DEN BOEF, Arie Jeffrey ,  DAVIS, Timothy Dugan ,  ENGBLOM, Peter David ,  BHATTACHARYYA, Kaustuve

    IPC: G03F7/20

    CPC classification number: G03F9/7069 ,  G01B11/272 ,  G03F7/70633

    Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.

    METROLOGY APPARATUS AND A METHOD OF DETERMINING A CHARACTERISTIC OF INTEREST
    7.
    发明公开
    METROLOGY APPARATUS AND A METHOD OF DETERMINING A CHARACTERISTIC OF INTEREST 审中-公开

    公开(公告)号：EP3499312A1

    公开(公告)日：2019-06-19

    申请号：EP17207587.1

    申请日：2017-12-15

    Applicant: ASML Netherlands B.V.

    Inventor： DEN BOEF, Arie Jeffrey ,  VAN DEN OETELAAR, Ronald Joseph Antonius

    IPC: G03F7/20

    Abstract: A metrology apparatus for determining a characteristic of interest relating to at least one structure on a substrate, the characteristic of interest is an overlay value between a first layer and a second layer on the substrate and the at least one structure comprising features in the first layer and features in the second layer, the metrology apparatus comprising a sensor for detecting characteristics of radiation impinging on the sensor; an optical system being configured to illuminate the at least one structure with radiation received from a source and the optical system being configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor, the optical system being configured to image the at least one structure on the sensor, the optical system being configured to prevent a transmission of radiation of the 0 th diffraction order of the scattered radiation towards the sensor, and the sensor being arranged in an image plane of the optical system or the sensor being arranged in a plane conjugate with the image plane; a determining system being configured to receive a signal from the sensor representing an image being recorded on the sensor and being configured to determine the overlay value on basis of a displacement of the features in the first layer of the substrate with respect to the features in the second layer of the substrate.

    DETERMINING EDGE ROUGHNESS PARAMETERS
    9.
    发明公开
    DETERMINING EDGE ROUGHNESS PARAMETERS 审中-公开

    公开(公告)号：EP3467589A1

    公开(公告)日：2019-04-10

    申请号：EP17195151.0

    申请日：2017-10-06

    Applicant: ASML Netherlands B.V.

    Inventor： JAK, Martin Jacobus Johan ,  QUINTANILHA, Richard ,  DEN BOEF, Arie Jeffrey ,  KUBIS, Michael

    IPC: G03F7/20

    Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth / pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

    METROLOGY METHOD FOR MEASURING AN ETCHED TRENCH AND ASSOCIATED METROLOGY APPARATUS
    10.
    发明公开
    METROLOGY METHOD FOR MEASURING AN ETCHED TRENCH AND ASSOCIATED METROLOGY APPARATUS 审中-公开

    公开(公告)号：EP4016186A1

    公开(公告)日：2022-06-22

    申请号：EP20215422.5

    申请日：2020-12-18

    Applicant: ASML Netherlands B.V.

    Inventor： MATHIJSSEN, Simon Gijsbert Josephus ,  DEN BOEF, Arie Jeffrey

    IPC: G03F1/80 ,  G03F1/84

    Abstract: A method of determining at least one homogeneity metric describing homogeneity of an etched trench on a substrate formed by a lithographic manufacturing process. The method comprises obtaining one or more images of the etched trench, wherein each of said one or more images comprises a spatial representation of one or more parameters of scattered radiation as detected by a detector or camera (365) following scattering and/or diffraction from the etched trench; and measuring homogeneity along the length of the etched trench on said one or more images to determine said at least one homogeneity metric.

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