公开(公告)号：US20210132509A1

公开(公告)日：2021-05-06

申请号：US17049707

申请日：2019-04-03

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Simon Reinald HUISMAN ,  Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY ,  Yuxiang LIN ,  Vu Quang TRAN ,  Sebastianus Adrianus GOORDEN ,  Justin Lloyd KREUZER ,  Christopher John MASON ,  Igor Matheus Petronella AARTS ,  Krishanu SHOME ,  Irit TZEMAH

IPC: G03F7/20 ,  G03F9/00

Abstract: An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.

公开(公告)号：US20250060680A1

公开(公告)日：2025-02-20

申请号：US18721405

申请日：2022-12-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Aabid PATEL ,  Joshua ADAMS ,  Lisa DIXON ,  Igor Matheus Petronella AARTS

IPC: G03F7/00 ,  G01B11/27

Abstract: Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods can be faster and/or generate more information than typical methods for generating alignment signals because they utilize one or more existing structures in a patterned semiconductor wafer instead of a dedicated alignment structure. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning includes: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.

公开(公告)号：US20230176494A1

公开(公告)日：2023-06-08

申请号：US17922922

申请日：2021-04-22

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

Inventor： Zahrasadat DASTOURI ,  Igor Matheus Petronella AARTS ,  Simon Gijsbert Josephus MATHIJISSEN ,  Peter David ENGBLOM

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F9/7088 ,  G03F9/7092 ,  G03F9/7049 ,  G03F7/70633

Abstract: A method for generating an alignment signal that includes detecting local dimensional distortions of an alignment mark and generating the alignment signal based on the alignment mark. The alignment signal is weighted based on the local dimensional distortions of the alignment mark. Detecting the local dimensional distortions can include irradiating the alignment mark with radiation, the alignment mark including a geometric feature, and detecting one or more phase and/or amplitude shifts in reflected radiation from the geometric feature. The one or more phase and/or amplitude shifts correspond to the local dimensional distortions of the geometric feature. A parameter of the radiation, an alignment inspection location within the geometric feature, an alignment inspection location on a layer of a structure, and/or a radiation beam trajectory across the geometric feature may be determined based on the one or more detected phase and/or amplitude shifts.

公开(公告)号：US20240263941A1

公开(公告)日：2024-08-08

申请号：US18562675

申请日：2022-05-24

Applicant: ASML Netherlands B.V.

Inventor： Rui CHENG ,  Joshua ADAMS ,  Franciscus Godefridus Casper BIJNEN ,  Eric Brian CATEY ,  Igor Matheus Petronella AARTS

IPC: G01B11/27 ,  G03F9/00

CPC classification number: G01B11/272 ,  G03F9/7046 ,  G03F9/7065 ,  G03F9/7069 ,  G03F9/7076 ,  G03F9/7092

Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.

公开(公告)号：US20240168397A1

公开(公告)日：2024-05-23

申请号：US18552623

申请日：2022-03-21

Applicant: ASML Netherlands B.V.

Inventor： Joshua ADAMS ,  Leonardo Gabriel MONTILLA ,  Nick Franciscus Wilhelmus THISSEN ,  Leendert Jan KARSSEMEIJER ,  Igor Matheus Petronella AARTS ,  Zahrasadat DASTOURI

IPC: G03F9/00 ,  G01B9/02055 ,  G01B11/16 ,  G01B11/27 ,  G03F7/00

CPC classification number: G03F9/7049 ,  G01B9/02062 ,  G01B11/161 ,  G01B11/272 ,  G03F7/70616 ,  G03F7/706841 ,  G03F9/7065 ,  G03F9/7088 ,  G03F9/7092

Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to ensure accurate exposure of one or more patterns on the substrate. An example method can include receiving measurement data indicative of an interference between light diffracted from a plurality of alignment marks disposed on a substrate or reflected from the substrate. The example method can further include determining substrate deformation data based on the measurement data. The example method can further include determining alignment mark deformation data based on the measurement data. The alignment mark deformation data can include alignment mark deformation spectral pattern data, alignment mark deformation amplitude data, and alignment mark deformation offset data. Subsequently, the example method can include determining a correction to the measurement data based on the substrate deformation data and the alignment mark deformation data.

公开(公告)号：US20190196341A1

公开(公告)日：2019-06-27

申请号：US16328750

申请日：2017-08-18

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

Inventor： Kevin J VIOLETTE ,  Igor Matheus Petronella AARTS ,  Haico Victor KOK ,  Eric Brian CATEY

IPC: G03F7/20 ,  G03F9/00

Abstract: A method, including printing an apparatus mark onto a structure while the structure is at least partly within a lithographic apparatus. The structure may be part of, or is located on, a substrate table, but is separate from a substrate to be held by the apparatus. The method further includes measuring the apparatus mark using a sensor system within the apparatus.