公开(公告)号：US20200341366A1

公开(公告)日：2020-10-29

申请号：US16765339

申请日：2018-11-27

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V

Inventor： Derk Servatius Gertruda BROUNS ,  Joshua ADAMS ,  Aage BENDIKSEN ,  Richard JACOBS ,  Andrew JUDGE ,  Veera Venkata Narasimha Narendra Phani KOTTAPALLI ,  Joseph Harry LYONS ,  Theodorus Marinus MODDERMAN ,  Manish RANJAN ,  Marcus Adrianus VAN DE KERKHOF ,  Xugang XIONG

IPC: G03F1/64 ,  G03F1/00 ,  G03F7/20

Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

公开(公告)号：US20240168397A1

公开(公告)日：2024-05-23

申请号：US18552623

申请日：2022-03-21

Applicant: ASML Netherlands B.V.

Inventor： Joshua ADAMS ,  Leonardo Gabriel MONTILLA ,  Nick Franciscus Wilhelmus THISSEN ,  Leendert Jan KARSSEMEIJER ,  Igor Matheus Petronella AARTS ,  Zahrasadat DASTOURI

IPC: G03F9/00 ,  G01B9/02055 ,  G01B11/16 ,  G01B11/27 ,  G03F7/00

CPC classification number: G03F9/7049 ,  G01B9/02062 ,  G01B11/161 ,  G01B11/272 ,  G03F7/70616 ,  G03F7/706841 ,  G03F9/7065 ,  G03F9/7088 ,  G03F9/7092

Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to ensure accurate exposure of one or more patterns on the substrate. An example method can include receiving measurement data indicative of an interference between light diffracted from a plurality of alignment marks disposed on a substrate or reflected from the substrate. The example method can further include determining substrate deformation data based on the measurement data. The example method can further include determining alignment mark deformation data based on the measurement data. The alignment mark deformation data can include alignment mark deformation spectral pattern data, alignment mark deformation amplitude data, and alignment mark deformation offset data. Subsequently, the example method can include determining a correction to the measurement data based on the substrate deformation data and the alignment mark deformation data.

公开(公告)号：US20220121129A1

公开(公告)日：2022-04-21

申请号：US17432443

申请日：2020-02-11

Applicant: ASML Netherlands B.V.

Inventor： Yuxiang LIN ,  Joshua ADAMS

IPC: G03F7/20 ,  G03F9/00 ,  H01L23/544

Abstract: A metrology system includes a radiation source configured to generate radiation, an optical element configured to direct the radiation toward a grating structure comprising a non-constant pitch, and a detector configured to receive radiation scattered by the grating structure and generate a measurement based on the received radiation. The metrology system is configured to generate a set of measurements corresponding to a set of locations on the grating structure along a direction of the non-constant pitch and determine a parameter of a lithographic process or a correction for the metrology system based on the set of measurements.

公开(公告)号：US20240103386A1

公开(公告)日：2024-03-28

申请号：US18376237

申请日：2023-10-03

Applicant: ASML NETHERLANDS B.V ,  ASML HOLDING N.V

Inventor： Derk Servatius Gertruda BROUNS ,  Joshua ADAMS ,  Aage BENDIKSEN ,  Richard JACOBS ,  Andrew JUDGE ,  Veera Venkata Narasimha Narendra Phani KOTTAPALLI ,  Joseph Harry LYONS ,  Theodorus Marinus MODDERMAN ,  Manish RANJAN ,  Marcus Adrianus VAN DE KERKHOF ,  Xugang XIONG

IPC: G03F7/00 ,  G03F1/62 ,  G03F1/64

CPC classification number: G03F7/7085 ,  G03F1/62 ,  G03F1/64 ,  G03F7/70033 ,  G03F7/70891 ,  G03F7/70983

Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

公开(公告)号：US20250147438A1

公开(公告)日：2025-05-08

申请号：US18835287

申请日：2023-01-04

Applicant: ASML Netherlands B.V.

Inventor： Krishanu SHOME ,  Emily Rose FINAN ,  Kirill Urievich SOBOLEV ,  Joshua ADAMS ,  Jonathan S. RODNEY ,  Yuxiang LIN ,  Eric Brian CATEY

IPC: G03F7/00 ,  G02B5/00 ,  G02B26/00

Abstract: A system includes an imaging system, a spatial filter, and a detector. The system is configured to receive a plurality of diffraction orders. The spatial filter is configured to block one or more undesired diffraction orders of the plurality of diffraction orders and to pass one or more desired diffraction orders of the plurality of diffraction orders. The spatial filter includes one or more obscurations having an angular dependent radius that varies azimuthally. The detector is configured to receive and measure an intensity of the one or more desired diffraction orders. The spatial filter is motorized.

公开(公告)号：US20240263941A1

公开(公告)日：2024-08-08

申请号：US18562675

申请日：2022-05-24

Applicant: ASML Netherlands B.V.

Inventor： Rui CHENG ,  Joshua ADAMS ,  Franciscus Godefridus Casper BIJNEN ,  Eric Brian CATEY ,  Igor Matheus Petronella AARTS

IPC: G01B11/27 ,  G03F9/00

CPC classification number: G01B11/272 ,  G03F9/7046 ,  G03F9/7065 ,  G03F9/7069 ,  G03F9/7076 ,  G03F9/7092

Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.

公开(公告)号：US20250060680A1

公开(公告)日：2025-02-20

申请号：US18721405

申请日：2022-12-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Aabid PATEL ,  Joshua ADAMS ,  Lisa DIXON ,  Igor Matheus Petronella AARTS

IPC: G03F7/00 ,  G01B11/27

Abstract: Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods can be faster and/or generate more information than typical methods for generating alignment signals because they utilize one or more existing structures in a patterned semiconductor wafer instead of a dedicated alignment structure. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning includes: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.