Systems and methods for thermally conditioning a wafer in a charged particle beam apparatus

    公开(公告)号:US11139141B2

    公开(公告)日:2021-10-05

    申请号:US16675192

    申请日:2019-11-05

    Abstract: An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including a thermal conditioning station for preconditioning a temperature of a wafer is disclosed. The charged particle beam apparatus may scan the wafer to measure one or more characteristics of the structures on the wafer and analyze the one or more characteristics. The charged particle beam apparatus may further determine a temperature characteristic of the wafer based on the analysis of the one or more characteristics of the structure and adjust the thermal conditioning station based on the temperature characteristic.

    Particle beam apparatus
    4.
    发明授权

    公开(公告)号:US11385556B2

    公开(公告)日:2022-07-12

    申请号:US17054194

    申请日:2019-05-22

    Abstract: An apparatus having: a vacuum chamber for enclosing an article support, the article support configured to support an article such that a volume is defined between the article support and the article, the article support including a plurality of supporting protrusions configured to provide a plane of support for the article; a conduit for providing a fluid to the volume such that the fluid provides heat transfer between the article and the article support; and a controller for controlling the fluid supply to the volume, wherein the controller is configured to control a fluid supply unit to start removing the fluid substantially at a time the article reaches a stable temperature.

    Systems and methods for thermally conditioning a wafer in a charged particle beam apparatus

    公开(公告)号:US12217930B2

    公开(公告)日:2025-02-04

    申请号:US18467642

    申请日:2023-09-14

    Abstract: An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including a thermal conditioning station for preconditioning a temperature of a wafer is disclosed. The charged particle beam apparatus may scan the wafer to measure one or more characteristics of the structures on the wafer and analyze the one or more characteristics. The charged particle beam apparatus may further determine a temperature characteristic of the wafer based on the analysis of the one or more characteristics of the structure and adjust the thermal conditioning station based on the temperature characteristic.

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