Abstract:
Embodiments herein describe systems, methods, and devices for thermal conditioning of patterning devices at a lithographic apparatus. A patterning device cooling system for thermally conditioning a patterning device (202) of a lithographic apparatus is described, the cooling system including a thermal conditioner that thermally conditions the patterning device, and a controller that controls the thermal conditioner to determine a temperature state of the patterning device, determine a production state of the lithographic apparatus, and thermally condition the patterning device for exposures based on the temperature state and a production state of the lithographic apparatus.
Abstract:
Disclosed herein is a method for determining thermally-induced deformation of a structure in a lithographic apparatus, the method comprising: obtaining timing data for a structure in a lithographic apparatus, wherein the timing data comprises timing data for the current state of the structure and timing history data that comprises timing data for at least one previous state of the structure; and using one or more models to determine thermally-induced deformation data for the structure in dependence on the timing history data and the timing data for the current state of the structure.
Abstract:
The invention relates to a setpoint generator for moving a patterning device of a lithographic apparatus, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the setpoint generator comprises a finite number of movement profiles for the patterning device, and wherein the setpoint generator is configured to select one of the finite number of movement profiles based on a desired movement profile and to output the selected movement profile as a setpoint for the patterning device.
Abstract:
Controlling, based on characteristics, a lithographic apparatus having an exposure mode configured to expose a wafer held by a substrate table to an image of a pattern on a production reticle via a projection system, wherein in the exposure mode the production reticle is held at a reticle stage and is protected by a pellicle, the method comprising determining the characteristics of the projecting in a calibration mode, and the controlling comprising moving in the exposure mode at least one of the projection system, the reticle stage and the substrate table during the exposing in dependence on the characteristics.
Abstract:
A lithographic apparatus comprises an illumination system configured to condition a radiation beam, a support to support a patterning device, a substrate table to hold a substrate; and a projection system to project the patterned radiation beam onto a target portion of the substrate. The support is provided with a transparent layer to protect the pattering device. The apparatus further comprises a transparent layer deformation-determining device to determine a deformation profile of the transparent layer, the deformation profile of the transparent layer expressing a deformation of the transparent layer during a scanning movement of the lithographic apparatus, a compensator device which is configured to control at least one of the projection system, the substrate table and the support in response to the deformation profile of the transparent layer to compensate for the deformation of the transparent layer during the scanning movement of the apparatus.
Abstract:
A patterning apparatus (10) for a lithographic apparatus, the patterning apparatus including a patterning device support structure (13, MT) configured to support a patterning device (11) having a planar surface (12); a patterning device conditioning system including a first gas outlet (20) configured to provide a first gas flow (25) over the planar surface in use and a second gas outlet (30) configured to provide a second gas flow (35) over the planar surface in use, wherein the first gas outlet and the second gas outlet are arranged at different distances perpendicular to the planar surface; and a control system (14) configured to independently control a first momentum of gas exiting the first gas outlet and a second momentum of gas exiting the second gas outlet or to independently vary the first gas flow and/or the second gas flow over the planar surface of the patterning device.
Abstract:
A patterning device cooling system (30) for thermally conditioning a patterning device (MA) of a lithographic apparatus, wherein the patterning device in use, is being irradiated by exposure radiation, wherein the patterning device cooling system comprises: a thermal conditioner (20) configured to thermally condition the patterning device; and a controller (500) configured to control the thermal conditioner to thermally condition the patterning device dependent on an amount of the exposure radiation absorbed by the patterning device.