公开(公告)号：WO2021249720A1

公开(公告)日：2021-12-16

申请号：PCT/EP2021/062795

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： PENG, Xingyue ,  SHI, Zhan ,  HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Gerui

IPC: G03F7/20 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70891

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process is described. Scanner aberration impact modeling may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model comprises a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form in lieu of a full simulation without involving calculation of an aerial image or a representation thereof.

公开(公告)号：EP4165471A1

公开(公告)日：2023-04-19

申请号：EP21727387.9

申请日：2021-05-14

Applicant: ASML Netherlands B.V.

Inventor： PENG, Xingyue ,  SHI, Zhan ,  HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Gerui

IPC: G03F7/20

公开(公告)号：EP4449204A1

公开(公告)日：2024-10-23

申请号：EP22822563.7

申请日：2022-11-30

Applicant: ASML Netherlands B.V.

Inventor： HSU, Duan-Fu, Stephen ,  LIU, Gerui ,  JIN, Wenjie ,  SUN, Dezheng

IPC: G03F7/20