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    WAVEFRONT OPTIMIZATION FOR TUNING SCANNER BASED ON PERFORMANCE MATCHING
    1.
    发明申请
    WAVEFRONT OPTIMIZATION FOR TUNING SCANNER BASED ON PERFORMANCE MATCHING 审中-公开

    公开(公告)号：WO2020002143A1

    公开(公告)日：2020-01-02

    申请号：PCT/EP2019/066446

    申请日：2019-06-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： HSU, Duan-Fu, Stephen ,  HENNERKES, Christoph, Rene, Konrad, Cebulla ,  HOWELL, Rafael C. ,  SHI, Zhan ,  LI, Xiaoyang ,  STAALS, Frank

    IPC: G03F7/20

    Abstract: Described herein is a method for determining a wavefront of a patterning apparatus of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model of a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movements, and a lens fingerprint of a tuning scanner (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., wavefront parameters such as tilt, offset, etc.) based on the lens fingerprint of the tuning scanner, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning scanner performance.

    ABERRATION IMPACT SYSTEMS, MODELS, AND MANUFACTURING PROCESSES
    2.
    发明申请
    ABERRATION IMPACT SYSTEMS, MODELS, AND MANUFACTURING PROCESSES 审中-公开

    公开(公告)号：WO2021249720A1

    公开(公告)日：2021-12-16

    申请号：PCT/EP2021/062795

    申请日：2021-05-14

    Applicant: ASML NETHERLANDS B.V.

    Inventor： PENG, Xingyue ,  SHI, Zhan ,  HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Gerui

    IPC: G03F7/20 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70891

    Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process is described. Scanner aberration impact modeling may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model comprises a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form in lieu of a full simulation without involving calculation of an aerial image or a representation thereof.

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