公开(公告)号：WO2012034829A1

公开(公告)日：2012-03-22

申请号：PCT/EP2011/064390

申请日：2011-09-01

Applicant: ASML Netherlands B.V. ,  LIU, Hua-Yu ,  LIU, Wei ,  LI, Jiangwei ,  CHEN, Luoqi ,  JIANG, Jiong

Inventor： LIU, Hua-Yu ,  LIU, Wei ,  LI, Jiangwei ,  CHEN, Luoqi ,  JIANG, Jiong

IPC: G03F7/20

CPC classification number: G06F17/5045 ,  G03F7/705 ,  G03F7/70941 ,  G06F17/5009

Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare. Some of the system-specific effects included in the simulation are: a flare effect due to reflection from black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due reflections from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and a flare effect due to contribution from neighboring exposure fields.

Abstract translation: 描述了一种用于降低由用于将设计布局成像到基底上的光刻设备产生的火炬的影响的方法。 通过将曝光场上的设计布局的密度图与点扩散函数（PSF）进行数学组合来模拟光刻设备的曝光区域中的闪光图，其中可以在闪光图中对系统特定的影响 模拟。 通过使用确定的耀斑图来计算设计布局的位置相关的闪光校正，从而减少耀斑的影响。 仿真中包括的一些系统特定效果是：由于掩模的黑色边缘的反射引起的耀斑效应，由于限定曝光狭缝的一个或多个掩模版掩模片的反射引起的耀斑效应，由于 过扫描，来自动态气体锁（DGL）机构的气体锁定子孔的反射引起的耀斑效应，以及由于相邻曝光场的贡献而产生的耀斑效应。

公开(公告)号：WO2016078862A1

公开(公告)日：2016-05-26

申请号：PCT/EP2015/074460

申请日：2015-10-22

Applicant: ASML NETHERLANDS B.V.

Inventor： LU, Yen-Wen ,  CHEN, Jay, Jianhui ,  LIU, Wei ,  MENCHTCHIKOV, Boris ,  WANG, Jen-Shiang ,  HUANG, Te-Chih

IPC: G03F7/20

CPC classification number: G01N21/8806 ,  G01B11/272 ,  G01N21/9501 ,  G01N2021/8822 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683

Abstract: Disclosed herein is a method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction order; determining the overlay error from by the corrected characteristics; and adjusting characteristics of the lithographic process based on the overlay error.

Abstract translation: 本文公开了一种确定第一结构和第二结构之间的覆盖误差的方法，其中第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到衬底上，该方法包括：获得 明显叠加错误; 获得由除了第一和第二结构的不对准之外的因素引起的系统误差; 并通过从明显重叠错误中去除系统误差来确定覆盖误差。 该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 通过校正的特征确定覆盖误差; 并基于叠加误差调整光刻过程的特性。

公开(公告)号：WO2015101460A1

公开(公告)日：2015-07-09

申请号：PCT/EP2014/076544

申请日：2014-12-04

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEN, Guangqing ,  LIU, Wei ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01B11/00 ,  G01B11/303 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.

Abstract translation: 描述了一种计量目标设计方法。 该方法包括将测量目标设计的参数的灵敏度确定为用于形成或测量计量目标的形成的过程参数的扰动，以及基于灵敏度之和确定度量目标设计的鲁棒性 乘以至少一个过程参数的扰动。