公开(公告)号：WO2018197146A1

公开(公告)日：2018-11-01

申请号：PCT/EP2018/057982

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： SIMONS, Hubertus, Johannes, Gertrudus ,  MOS, Everhardus, Cornelis ,  WEI, Xiuhong ,  MAHMOODI BARAM, Reza ,  YAGUBIZADE, Hadi ,  ZHANG, Yichen

IPC: G03F7/20

Abstract: A device manufacturing method comprising: exposing a first substrate using a lithographic apparatus to form a patterned layer comprising first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer comprising the first features; wherein the correction is applied during the exposing the second substrate.