公开(公告)号：WO2016091529A1

公开(公告)日：2016-06-16

申请号：PCT/EP2015/076432

申请日：2015-11-12

Applicant: ASML NETHERLANDS B.V.

Inventor： MENGER, Jasper ,  ABEN, Paul, Cornelis, Hubertus ,  MOS, Everhardus, Cornelis

IPC: G03F9/00

CPC classification number: G03F9/7046

Abstract: Offline metrology measurements 804 are performed on wafer substrates that have been subjected to lithographic processing. Model parameters 808 are calculated 806 by fitting the measurements to an extended high-order substrate model defined 802 using a combination of basis functions that include an edge basis function related to a substrate edge. The radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may for example be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled 820 using the calculated high-order substrate model parameters 808, in combination 81 8 with low-order substrate model parameters 816 obtained by fitting 814 inline measurements 812 to a low order model 810.

Abstract translation: 在经过光刻处理的晶片衬底上进行离线测量测量804。 通过使用包括与衬底边缘相关的边缘基函数的基函数的组合来将测量拟合到限定802的扩展高阶衬底模型来计算806，模型参数808。 径向基础函数可以用距基板边缘的距离表示。 边缘基函数可以例如是指数衰减函数或有理函数。 使用计算出的高阶衬底模型参数808（组合81,8）与通过将814个在线测量812拟合到低阶模型810而获得的低阶衬底模型参数816来控制后续衬底的平版印刷处理。

公开(公告)号：WO2015110191A1

公开(公告)日：2015-07-30

申请号：PCT/EP2014/073645

申请日：2014-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： WILDENBERG, Jochem ,  MOS, Everhardus, Cornelis

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F7/70775 ,  G01B11/272 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7003 ,  G03F9/7046

Abstract: Disclosed is a method of determining a measurement subset of metrology point locations which comprises a subset of potential metrology point locations on a substrate. The method comprises identifying a plurality of candidate metrology point locations from the potential metrology point locations. A change in the level of informativity imparted by said measurement subset of metrology point locations which is attributable to the inclusion of that candidate metrology point location into the measurement subset of metrology point locations is evaluated for each of the candidate metrology point locations. The candidate metrology point locations which have the greatest increase in the level of informativity attributed thereto are selected for inclusion into the measurement subset of metrology point locations.

Abstract translation: 公开了一种确定度量点位置的测量子集的方法，其包括衬底上的潜在测量点位置的子集。 该方法包括从潜在的计量点位置识别多个候选计量点位置。 对于候选计量点位置中的每一个，评估归因于将该候选计量点位置包含在计量点位置的测量子集中的测量点位置的所述测量子集所赋予的信息水平的变化。 选择归因于其的信息水平增加最大的候选计量点位置以包含在度量点位置的测量子集中。

公开(公告)号：WO2018233966A1

公开(公告)日：2018-12-27

申请号：PCT/EP2018/063527

申请日：2018-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： HARUTYUNYAN, Davit ,  JIA, Fei ,  STAALS, Frank ,  WANG, Fuming ,  LOOIJESTIJN, Hugo, Thomas ,  RIJNIERSE, Cornelis, Johannes ,  PISARENCO, Maxim ,  WERKMAN, Roy ,  THEEUWES, Thomas ,  VAN HEMERT, Tom ,  BASTANI, Vahid ,  WILDENBERG, Jochem, Sebastiaan ,  MOS, Everhardus, Cornelis ,  WALLERBOS, Erik, Johannes, Maria

IPC: G03F7/20 ,  G05B13/04 ,  G05B19/418 ,  H01L21/66

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method comprising: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

公开(公告)号：WO2018197146A1

公开(公告)日：2018-11-01

申请号：PCT/EP2018/057982

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： SIMONS, Hubertus, Johannes, Gertrudus ,  MOS, Everhardus, Cornelis ,  WEI, Xiuhong ,  MAHMOODI BARAM, Reza ,  YAGUBIZADE, Hadi ,  ZHANG, Yichen

IPC: G03F7/20

Abstract: A device manufacturing method comprising: exposing a first substrate using a lithographic apparatus to form a patterned layer comprising first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer comprising the first features; wherein the correction is applied during the exposing the second substrate.

公开(公告)号：WO2018099690A1

公开(公告)日：2018-06-07

申请号：PCT/EP2017/078288

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  CALADO, Victor, Emanuel ,  VAN DIJK, Leon, Paul ,  WERKMAN, Roy ,  MOS, Everhardus, Cornelis ,  WILDENBERG, Jochem, Sebastiaan ,  JOCHEMSEN, Marinus ,  RAJASEKHARAN, Bijoy ,  JENSEN, Erik ,  URBANCZYK, Adam, Jan

IPC: G03F7/20 ,  H01L21/30 ,  H01L21/67 ,  H01L21/66

Abstract: A method to change an etch parameter of a substrate etching process, the method comprising: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

公开(公告)号：WO2018077651A1

公开(公告)日：2018-05-03

申请号：PCT/EP2017/076338

申请日：2017-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： MOS, Everhardus, Cornelis ,  WILDENBERG, Jochem, Sebastiaan ,  WALLERBOS, Erik, Johannes, Maria ,  VAN DER SCHAAR, Maurits ,  STAALS, Frank ,  ELICH, Franciscus, Hendricus, Arnoldus

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method comprising: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

Abstract translation: 1.一种用于改进光刻过程的产量的方法，所述方法包括：确定衬底上的性能参数的参数指纹，所述参数指纹包括与所述性能参数中的不确定性有关的信息; 确定所述衬底上的所述性能参数的处理窗口指纹，所述处理窗口与所述性能参数的可允许范围相关联; 以及确定与性能参数在可允许范围之外的概率相关联的概率度量。 可选地，基于概率度量来确定光刻过程的校正。

公开(公告)号：WO2018153711A1

公开(公告)日：2018-08-30

申请号：PCT/EP2018/053412

申请日：2018-02-12

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  SEGERS, Bart, Peter, Bert ,  MOS, Everhardus, Cornelis ,  SCHMITT-WEAVER, Emil, Peter ,  ZHANG, Yichen ,  LIU, Xing, Lan ,  JUNGBLUT, Reiner, Maria ,  YU, Hyun-Woo ,  VAN RHEE, Petrus, Gerardus ,  KILITZIRAKI, Maria

IPC: G03F7/20 ,  G03F9/00

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may comprise a correlation.

公开(公告)号：WO2017067748A1

公开(公告)日：2017-04-27

申请号：PCT/EP2016/072852

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  MOS, Everhardus, Cornelis ,  TEN BERGE, Peter ,  WARDENIER, Peter, Hanzen ,  JENSEN, Erik ,  CEKLI, Hakki, Ergun

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705

Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining, by a computer system, a patterning error offset for use with the modification apparatus based on the determined nonlinearity.

Abstract translation: 一种方法，包括：获得关于涉及图案形成装置的图案化过程中的图案化错误的信息; 根据所述图案误差信息，通过修改装置修改所述图案误差引入的一段时间内确定非线性度; 以及由计算机系统基于所确定的非线性确定供修改装置使用的图案化误差偏移。

公开(公告)号：WO2016128190A1

公开(公告)日：2016-08-18

申请号：PCT/EP2016/051074

申请日：2016-01-20

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  JOCHEMSEN, Marinus ,  STAALS, Frank ,  PRENTICE, Christopher ,  DEPRE, Laurent, Michel, Marcel ,  BELTMAN, Johannes, Marcus, Maria ,  WERKMAN, Roy ,  WILDENBERG, Jochem, Sebastiaan ,  MOS, Everhardus, Cornelis

IPC: G03F1/36 ,  G03F1/70

CPC classification number: G03F1/70 ,  G03F1/22 ,  G03F1/36 ,  G06T7/0006 ,  G06T2207/30148

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

Abstract translation: 一种方法包括确定用于光刻成像系统的基板的地形信息，基于地形信息确定或估计平版印刷成像系统的图像场中的多个点的成像误差信息，使设计适于 基于成像误差信息的图案形成装置。 在一个实施例中，基于用于光刻成像系统的图像场中的多个点的成像误差信息优化用于度量目标的多个位置，其中所述优化涉及最小化描述成像误差信息的成本函数。 在一个实施例中，基于图像场的成像要求的差异对位置进行加权。

公开(公告)号：WO2008066375A2

公开(公告)日：2008-06-05

申请号：PCT/NL2007/000298

申请日：2007-12-03

Applicant: ASML NETHERLANDS B.V. ,  MOS, Everhardus, Cornelis ,  VAN DER SCHAAR, Maurits ,  SIMONS, Hubertus, Johannes, Gertrudus

Inventor： MOS, Everhardus, Cornelis ,  VAN DER SCHAAR, Maurits ,  SIMONS, Hubertus, Johannes, Gertrudus

IPC: G03F7/20

CPC classification number: G03F7/70725 ,  G03F7/70258 ,  G03F7/70358 ,  G03F7/70458 ,  G03F7/70525 ,  G03F7/70633 ,  G03F7/70783

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.

Abstract translation: 光刻设备包括配置成调节辐射束的照明系统，图案形成装置的支撑件，用于衬底的衬底台，投影系统和控制系统。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 投影系统被配置为沿着扫描路径将图案化的辐射束作为图像投影到基板的目标部分上。 扫描路径由光刻设备的曝光场的扫描方向上的轨迹限定。 控制系统耦合到支撑件，基板台和投影系统，用于分别控制支撑件，基板台和投影系统的作用。 控制系统被配置为通过在该区域中的图像的时间调整来校正沿着扫描路径的区域中的图像的局部失真。