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    METHODS USING FINGERPRINT AND EVOLUTION ANALYSIS
    1.
    发明申请
    METHODS USING FINGERPRINT AND EVOLUTION ANALYSIS 审中-公开

    公开(公告)号：WO2019233743A1

    公开(公告)日：2019-12-12

    申请号：PCT/EP2019/062903

    申请日：2019-05-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： VAN DONGEN, Jeroen ,  TEL, Wim, Tjibbo ,  ROY, Sarathi ,  ZHANG, Yichen ,  CAVALLI, Andrea ,  SJENITZER, Bart, Laurens ,  HASTINGS, Simon, Philip, Spencer

    IPC: G03F7/20 ,  G03F9/00

    Abstract: The present invention provides a method of determining a sampling control scheme and/or a processing control for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a control scheme is generated for the device using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. The present invention also provides a method of determining which of the multiple devices contributed to a fingerprint of a processing parameter.

    A METHOD OF MONITORING A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES
    3.
    发明申请
    A METHOD OF MONITORING A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES 审中-公开

    公开(公告)号：WO2023036526A1

    公开(公告)日：2023-03-16

    申请号：PCT/EP2022/071985

    申请日：2022-08-04

    Applicant: ASML NETHERLANDS B.V.

    Inventor： BASTANI, Vahid ,  ZHANG, Yichen ,  DE ATHAYDE COSTA E SILVA, Marsil ,  DILLEN, Hermanus, Adrianus ,  VAN WIJK, Robert Jan

    IPC: G03F7/20

    Abstract: Disclosed is a computer implemented method of determining a placement metric relating to placement of one or more features on a substrate in a lithographic process. The method comprises obtaining setup data comprising placement error contributor data relating to a plurality of placement error contributor parameters and yield data representative of yield and defining a statistical model for predicting a yield metric, the statistical model being based on a placement metric, the placement metric being a function of said placement error contributor parameters, and associated model coefficients. The model coefficients are fitted based on said setup data; and the placement metric determined from said fitted model coefficients.

    COMPUTATIONAL METROLOGY BASED SAMPLING SCHEME
    4.
    发明申请
    COMPUTATIONAL METROLOGY BASED SAMPLING SCHEME 审中-公开

    公开(公告)号：WO2019145092A1

    公开(公告)日：2019-08-01

    申请号：PCT/EP2018/085153

    申请日：2018-12-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TEL, Wim, Tjibbo ,  ZHANG, Yichen ,  ROY, Sarathi

    IPC: G03F7/20 ,  G01N21/956

    CPC classification number: G03F7/705 ,  G01N21/956 ,  G03F7/70633

    Abstract: A method for generating metrology sampling scheme for a patterning process, the method comprising: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing, by a hardware computer system, the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating, by the hardware computer system, a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

    DETERMINING LITHOGRAPHIC MATCHING PERFORMANCE
    5.
    发明申请
    DETERMINING LITHOGRAPHIC MATCHING PERFORMANCE 审中-公开

    公开(公告)号：WO2021047841A1

    公开(公告)日：2021-03-18

    申请号：PCT/EP2020/072473

    申请日：2020-08-11

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CUI, Yingchao ,  YAGUBIZADE, Hadi ,  WEI, Xiuhong ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  ROY, Sarathi ,  ZHANG, Yichen ,  KAMALI, Mohammad, Reza ,  KIM, Sang-Uk

    IPC: G03F7/20

    Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data E1M, E3M, E4M from recurrent monitoring for stability control for the available EUV scanners EUV1, EUV3 and EUV4. For a DUV scanner, second monitoring data D2M, is similarly obtained from recurrent monitoring (DMW, MT, OV, SM) for stability control. The EUV monitoring data E1M, E3M, E4M are in a first layout. The DUV monitoring data D2M are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing 900, 1000 at least one of the first and second monitoring data into a common layout E1S, E3S, E4S, D2S to allow comparison 802 of the first and second monitoring data.

    DEVICE MANUFACTURING METHOD
    7.
    发明申请
    DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：WO2018197146A1

    公开(公告)日：2018-11-01

    申请号：PCT/EP2018/057982

    申请日：2018-03-28

    Applicant: ASML NETHERLANDS B.V.

    Inventor： SIMONS, Hubertus, Johannes, Gertrudus ,  MOS, Everhardus, Cornelis ,  WEI, Xiuhong ,  MAHMOODI BARAM, Reza ,  YAGUBIZADE, Hadi ,  ZHANG, Yichen

    IPC: G03F7/20

    Abstract: A device manufacturing method comprising: exposing a first substrate using a lithographic apparatus to form a patterned layer comprising first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer comprising the first features; wherein the correction is applied during the exposing the second substrate.

    A METHOD OF MONITORING A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES
    10.
    发明公开
    A METHOD OF MONITORING A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES 审中-公开

    公开(公告)号：EP4191337A1

    公开(公告)日：2023-06-07

    申请号：EP21211785.7

    申请日：2021-12-01

    Applicant: ASML Netherlands B.V.

    Inventor： BASTANI, Vahid ,  ZHANG, Yichen ,  DE ATHAYDE COSTA E SILVA, Marsil ,  DILLEN, Hermanus Adrianus ,  VAN WIJK, Robert Jan

    IPC: G03F7/20

    Abstract: Disclosed is a method of determining a placement metric relating to placement of one or more features on a substrate in a lithographic process. The method comprises obtaining setup data comprising placement error contributor data relating to a plurality of placement error contributor parameters and yield data representative of yield and defining a statistical model for predicting a yield metric, the statistical model being based on a placement metric, the placement metric being a function of said placement error contributor parameters, and associated model coefficients. The model coefficients are fitted based on said setup data; and the placement metric determined from said fitted model coefficients.

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