公开(公告)号：WO2019110238A1

公开(公告)日：2019-06-13

申请号：PCT/EP2018/080708

申请日：2018-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： WERKMAN, Roy ,  RAJASEKHARAN, Bijoy ,  VERGAIJ-HUIZER, Lydia, Marianna ,  WILDENBERG, Jochem, Sebastiaan ,  VAN ITTERSUM, Ronald ,  SMORENBERG, Pieter, Gerardus, Jacobus ,  VAN DER HEIJDEN, Robertus, Wilhelmus ,  WEI, Xiuhong ,  YAGUBIZADE, Hadi

IPC: G03F7/20

Abstract: Disclosed is s method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method comprising: determining the plurality of corrections comprising a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein said determining step comprises determining corrections for each layer simultaneously in terms of a matching parameter.

公开(公告)号：WO2021047841A1

公开(公告)日：2021-03-18

申请号：PCT/EP2020/072473

申请日：2020-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： CUI, Yingchao ,  YAGUBIZADE, Hadi ,  WEI, Xiuhong ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  ROY, Sarathi ,  ZHANG, Yichen ,  KAMALI, Mohammad, Reza ,  KIM, Sang-Uk

IPC: G03F7/20

Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data E1M, E3M, E4M from recurrent monitoring for stability control for the available EUV scanners EUV1, EUV3 and EUV4. For a DUV scanner, second monitoring data D2M, is similarly obtained from recurrent monitoring (DMW, MT, OV, SM) for stability control. The EUV monitoring data E1M, E3M, E4M are in a first layout. The DUV monitoring data D2M are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing 900, 1000 at least one of the first and second monitoring data into a common layout E1S, E3S, E4S, D2S to allow comparison 802 of the first and second monitoring data.

公开(公告)号：WO2018197146A1

公开(公告)日：2018-11-01

申请号：PCT/EP2018/057982

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： SIMONS, Hubertus, Johannes, Gertrudus ,  MOS, Everhardus, Cornelis ,  WEI, Xiuhong ,  MAHMOODI BARAM, Reza ,  YAGUBIZADE, Hadi ,  ZHANG, Yichen

IPC: G03F7/20

Abstract: A device manufacturing method comprising: exposing a first substrate using a lithographic apparatus to form a patterned layer comprising first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer comprising the first features; wherein the correction is applied during the exposing the second substrate.

公开(公告)号：EP4439176A1

公开(公告)日：2024-10-02

申请号：EP23165332.0

申请日：2023-03-30

Applicant: ASML Netherlands B.V.

Inventor： OTTEN, Ronald, Henricus, Johannes ,  WEI, Xiuhong

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70783 ,  G03F7/7085 ,  G03F7/70633 ,  G03F9/7034 ,  G03F9/7092

Abstract: Disclosed is a method of determining the presence of stressors on a substrate. The method comprises obtaining substrate position data describing positional information of structures on the substrate in a substrate plane; obtaining substrate shape data describing a shape of the substrate; determining a first warp value from the substrate position data, the first warp value describing a warpage of the substrate; determining a second warp value from the substrate shape data, the second warp value describing the warpage of the substrate; and determining the presence of stressors on a back-side of the substrate based on the first warp value and second warp value.