公开(公告)号：WO2011045132A1

公开(公告)日：2011-04-21

申请号：PCT/EP2010/063378

申请日：2010-09-13

Applicant: ASML Netherlands B.V. ,  CRAMER, Hugo ,  MEGENS, Henricus

Inventor： CRAMER, Hugo ,  MEGENS, Henricus

IPC: G03F1/00 ,  G03F7/20 ,  G01N21/956 ,  G01N21/95

CPC classification number: G03F1/84 ,  G03F7/70625

Abstract: A system and method determines an approximate structure of an object on a substrate, by reconstruction. This may be applied, for example, in model based metrology of microscopic structures, for example to assess critical dimensions (CD) or overlay performance of a lithographic apparatus. A scatterometer is used to determine approximate structure of an object, such as a grating on a stack, on a substrate. The wafer substrate has an upper layer and an underlying layer. The substrate has a first scatterometry target region, comprising the grating on a stack object. The grating on a stack is made up of the upper and underlying layers. The upper layer is patterned with a periodic grating. The substrate further has a neighboring second scatterometry target region, where the upper layer is absent. The second region has just the unpatterned underlying layers.

Abstract translation: 系统和方法通过重建来确定衬底上的对象的近似结构。 这可以应用于例如基于模型的微观结构计量学，例如以评估光刻设备的临界尺寸（CD）或覆盖性能。 散射仪用于确定物体的近似结构，例如堆叠上的光栅，在衬底上。 晶片衬底具有上层和下层。 衬底具有第一散射测量目标区域，其包括在堆叠物体上的光栅。 堆叠上的光栅由上层和下层组成。 上层用周期性光栅图案化。 衬底还具有相邻的第二散射测量目标区域，其中上层不存在。 第二个地区只是没有图案的下层。

公开(公告)号：WO2011012624A1

公开(公告)日：2011-02-03

申请号：PCT/EP2010/060894

申请日：2010-07-27

Applicant: ASML Netherlands B.V. ,  CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

Inventor： CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation, the first image being formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在衬底上形成结构，该结构具有至少一个特征，该特征在印刷轮廓中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像，第一图像使用非零次衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

公开(公告)号：WO2014198516A1

公开(公告)日：2014-12-18

申请号：PCT/EP2014/060625

申请日：2014-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： CRAMER, Hugo ,  DEN BOEF, Arie, Jeffrey ,  MEGENS, Henricus ,  VAN DER SCHAAR, Maurits ,  HUANG, Te-Chih

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70625

Abstract: A method of determining a critical-dimension-related property such as critical dimension (CD) or exposure dose. Process a wafer using a lithography apparatus in a lithographic process to produce periodic targets with different respective critical dimension biases on the wafer. Illuminate each of the targets. Measure intensity of radiation scattered by the targets. Recognize and extract each grating from the image. Determine a differential signal. Then determine the CD-related property, such as CD or exposure dose, based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use the determined critical-dimension-related property to control the lithography apparatus in the lithographic processing of subsequent wafers. In order to use just two CD biases, a calibration step may use measurements on a "golden wafer" (i.e. a reference wafer) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

Abstract translation: 确定关键尺寸相关属性（如临界尺寸（CD））或曝光剂量的方法。 在光刻工艺中使用光刻设备处理晶片以在晶片上产生具有不同相应临界尺寸偏差的周期性靶。 照亮每个目标。 测量目标散射的辐射强度。 从图像中识别和提取每个光栅。 确定差分信号。 然后基于差分信号，CD偏差和差分信号以这种周期性目标的1：1线间比比接近零的知识来确定CD相关属性，例如CD或曝光剂量。 使用确定的临界尺寸相关属性来控制后续晶片的光刻处理中的光刻设备。 为了仅使用两个CD偏移，校准步骤可以使用“金色晶片”（即，参考晶片）上的测量来确定每个CD对与已知CD的强度梯度。 或者，校准可以基于对CD的强度梯度的灵敏度的模拟。

公开(公告)号：WO2010006935A3

公开(公告)日：2010-01-21

申请号：PCT/EP2009/058404

申请日：2009-07-03

Applicant: ASML Netherlands B.V. ,  MOS, Everhardus ,  MEGENS, Henricus ,  VAN DER SCHAAR, Maurits ,  SIMONS, Hubertus ,  MIDDLEBROOKS, Scott

Inventor： MOS, Everhardus ,  MEGENS, Henricus ,  VAN DER SCHAAR, Maurits ,  SIMONS, Hubertus ,  MIDDLEBROOKS, Scott

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.

公开(公告)号：WO2014082813A3

公开(公告)日：2014-06-05

申请号：PCT/EP2013/072719

申请日：2013-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： GROOTJANS, Willem, Jan ,  GARCIA GRANDA, Miguel ,  KRIST, Jouke ,  MEGENS, Henricus ,  XU, Lu

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

Abstract: Method for determining lithographic quality of a structure produced by a lithographic process using a periodic pattern, such as a grating, detects lithographic process window edges and optimum process conditions. Method steps are: 602: printing a structure using a lithographic process using a grating pattern; 604: selecting a first characteristic, such as a polarization direction, for the illumination; 606: illuminating the structure with incident radiation with the first characteristic; 608: detecting scattered radiation; 610: selecting a second characteristic, such as a different polarization direction, for the illumination; 612: illuminating the structure with incident radiation with the second characteristic; 614: detecting scattered radiation; 616: rotating one or more angularly resolved spectrum to line up the polarizations, thus correcting for different orientations of the polarizations; 618: determining a difference between the measured angularly resolved spectra; and 620: determining a value of lithographic quality of the structure using the determined difference.

公开(公告)号：WO2010076254A1

公开(公告)日：2010-07-08

申请号：PCT/EP2009/067620

申请日：2009-12-21

Applicant: ASML Netherlands B.V. ,  MEGENS, Henricus ,  FINDERS, Jozef ,  KIERS, Antoine ,  QUAEDACKERS, Johannes ,  VAN DER SCHAAR, Maurits ,  LEEWIS, Christian ,  VAN LAARHOVEN, Hendrik

Inventor： MEGENS, Henricus ,  FINDERS, Jozef ,  KIERS, Antoine ,  QUAEDACKERS, Johannes ,  VAN DER SCHAAR, Maurits ,  LEEWIS, Christian ,  VAN LAARHOVEN, Hendrik

IPC: G03F7/20

CPC classification number: G03F7/70466 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: A first target population and a second target population are etched into a substrate. The second target population has an asymmetry with respect to the first target population. This can allow the different target populations to be distinguished and characteristics of the different target populations determined.

Abstract translation: 将第一目标群体和第二目标群体蚀刻到基底中。 第二个目标人口与第一个目标人群有不对称性。 这可以允许区分不同的目标群体并确定不同目标群体的特征。