公开(公告)号：US12204255B2

公开(公告)日：2025-01-21

申请号：US18300094

申请日：2023-04-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Nicolaas Ten Kate ,  Joost Jeroen Ottens ,  Bastiaan Andreas Wilhelmus Hubertus Knarren ,  Robbert Jan Voogd ,  Giovanni Francisco Nino ,  Marinus Jan Remie ,  Johannes Henricus Wilhelmus Jacobs ,  Thibault Simon Mathieu Laurent ,  Johan Gertrudis Cornelis Kunnen

IPC: G03F7/00

Abstract: A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.

公开(公告)号：US20230273533A1

公开(公告)日：2023-08-31

申请号：US18300094

申请日：2023-04-13

Applicant: ASML NETHERLANDS B.V.

Inventor： NICOLAAS TEN KATE ,  Joost Jeroen Ottens ,  Bastiaan Andreas Wilhelmus Hubertus Knarren ,  Robbert Jan Voogd ,  Giovanni Francisco Nino ,  Marinus Jan Remie ,  Johannes Henricus Wilhelmus Jacobs ,  Thibault Simon Mathieu Laurent ,  Johan Gertrudis Cornelis Kunnen

IPC: G03F7/00

CPC classification number: G03F7/70875 ,  G03F7/7085

Abstract: A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.

公开(公告)号：US10031428B2

公开(公告)日：2018-07-24

申请号：US14762450

申请日：2014-02-20

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Koen Cuypers ,  Marcelo Henrique De Andrade Oliveira ,  Marinus Jan Remie ,  Chattarbir Singh ,  Laurentius Johannes Adrianus Van Bokhoven ,  Henricus Anita Jozef Wilhemus Van De Ven ,  José Nilton Fonseca Junior ,  Frank Johannes Jacobus Van Boxtel ,  Daniel Nathan Burbank ,  Erik Roelof Loopstra ,  Johannes Onvlee ,  Mark Josef Schuster ,  Robertus Nicodemus Jacobus Van Ballegoij ,  Christopher Charles Ward ,  Jan Steven Christiaan Westerlaken

IPC: G03B27/52 ,  G03F7/20

Abstract: A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate (410) positioned between the movable stage (401) and the projection system (208). The plate includes an opening (411) that comprises a first sidewall (411a) and a second sidewall (411b). The plate may be configured to provide a gas flow pattern (424) in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.

公开(公告)号：US11630399B2

公开(公告)日：2023-04-18

申请号：US17698100

申请日：2022-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Nicolaas Ten Kate ,  Joost Jeroen Ottens ,  Bastiaan Andreas Wilhelmus Hubertus Knarren ,  Robbert Jan Voogd ,  Giovanni Francisco Nino ,  Marinus Jan Remie ,  Johannes Henricus Wilhelmus Jacobs ,  Thibault Simon Mathieu Laurent ,  Johan Gertrudis Cornelis Kunnen

IPC: G03F7/20

Abstract: A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.

公开(公告)号：US11300890B2

公开(公告)日：2022-04-12

申请号：US16722924

申请日：2019-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Johan Gertrudis Cornelis Kunnen ,  Johannes Henricus Wilhelmus Jacobs ,  Coen Cornelis Wilhelmus Verspaget ,  Ronald Van Der Ham ,  Ivo Adam Johannes Thomas ,  Martijn Houben ,  Thibault Simon Mathieu Laurent ,  Gregory Martin Mason Corcoran ,  Ruud Hendrikus Martinus Johannes Bloks ,  Gerben Pieterse ,  Pieter Lein Joseph Gunter ,  Marinus Jan Remie ,  Sander Catharina Reinier Derks

IPC: G03F7/20

Abstract: A support table configured to support a substrate, the support table having a support section to support a substrate and a conditioning system to supply heat energy to and/or remove heat energy from the support section, wherein the conditioning system comprises a plurality of conditioning units that are independently controllable.

公开(公告)号：US10990025B2

公开(公告)日：2021-04-27

申请号：US16289875

申请日：2019-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Laurentius Johannes Adrianus Van Bokhoven ,  Ruud Hendrikus Martinus Johannes Bloks ,  Günes Nakiboglu ,  Marinus Jan Remie ,  Johan Gertrudis Cornelis Kunnen

IPC: G03F7/20

Abstract: An apparatus and method for controlling temperature of a patterning device in a lithographic apparatus, by flowing gas across the patterning device. A patterning apparatus includes: a patterning device support structure configured to support a patterning device; a patterning device conditioning system including a first gas outlet configured to provide a gas flow over a surface of the patterning device and a second gas outlet configured to provide a gas flow over a part of a surface of the patterning device support structure not supporting the patterning device; and a control system configured to separately control the temperature of the gas exiting the first and second gas outlets such that the gas exiting the second gas outlet is at a higher temperature than the gas exiting the first gas outlet and/or to separately control the temperature and gas flow rate of the gas exiting the first and second gas outlets.

公开(公告)号：US11281115B2

公开(公告)日：2022-03-22

申请号：US16734579

申请日：2020-01-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Nicolaas Ten Kate ,  Joost Jeroen Ottens ,  Bastiaan Andreas Wilhelmus Hubertus Knarren ,  Robbert Jan Voogd ,  Giovanni Francisco Nino ,  Marinus Jan Remie ,  Johannes Henricus Wilhelmus Jacobs ,  Thibault Simon Mathieu Laurent ,  Johan Gertrudis Cornelis Kunnen

IPC: G03F7/20

Abstract: A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.

公开(公告)号：US10520837B2

公开(公告)日：2019-12-31

申请号：US15932215

申请日：2018-02-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Johan Gertrudis Cornelis Kunnen ,  Johannes Henricus Wilhelmus Jacobs ,  Coen Cornelis Wilhelmus Verspaget ,  Ronald Van Der Ham ,  Ivo Adam Johannes Thomas ,  Martijn Houben ,  Thibault Simon Mathieu Laurent ,  Gregory Martin Mason Corcoran ,  Ruud Hendrikus Martinus Johannes Bloks ,  Gerben Pieterse ,  Pieter Lein Joseph Gunter ,  Marinus Jan Remie ,  Sander Catharina Reinier Derks

IPC: G03F7/20

Abstract: A support table configured to support a substrate, the support table having a support section to support a substrate and a conditioning system to supply heat energy to and/or remove heat energy from the support section, wherein the conditioning system comprises a plurality of conditioning units that are independently controllable.

公开(公告)号：US10222713B2

公开(公告)日：2019-03-05

申请号：US16061043

申请日：2016-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Laurentius Johannes Adrianus Van Bokhoven ,  Ruud Hendrikus Martinus Johannes Bloks ,  Günes Nakiboglu ,  Marinus Jan Remie ,  Johan Gertrudis Cornelis Kunnen

IPC: G03F7/20

Abstract: An apparatus and method for controlling temperature of a patterning device in a lithographic apparatus, by flowing gas across the patterning device. A patterning apparatus includes: a patterning device support structure configured to support a patterning device; a patterning device conditioning system including a first gas outlet configured to provide a gas flow over a surface of the patterning device and a second gas outlet configured to provide a gas flow over a part of a surface of the patterning device support structure not supporting the patterning device; and a control system configured to separately control the temperature of the gas exiting the first and second gas outlets such that the gas exiting the second gas outlet is at a higher temperature than the gas exiting the first gas outlet and/or to separately control the temperature and gas flow rate of the gas exiting the first and second gas outlets.