公开(公告)号：WO2019038054A1

公开(公告)日：2019-02-28

申请号：PCT/EP2018/071059

申请日：2018-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN WITTEVEEN, Koen ,  WANG, Wei-Chun ,  TURNER, Paul, Jonathan ,  MC NAMARA, Elliott, Gerard ,  MICELI, Giacomo

IPC: G03F7/20

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method comprises obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

公开(公告)号：WO2020187514A1

公开(公告)日：2020-09-24

申请号：PCT/EP2020/054087

申请日：2020-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TURNER, Paul, Jonathan ,  TSIATMAS, Anagnostis

IPC: G03F7/20

Abstract: Disclosed are a method, computer program and associated apparatuses for metrology. The method includes determining whether a substrate or substrate portion is subject to a process effect. The method comprises: obtaining inspection data comprising a plurality of sets of measurement data associated with a structure on the substrate or portion thereof;, for example measurement pupils; and obtaining fingerprint data describing a spatial variation of a parameter of interest. An iterative mapping of the inspection data to the fingerprint data is performed. Whether the structure is subject to a process effect is based on the degree to which the iterative mapping converges on a solution.

公开(公告)号：WO2019038054A9

公开(公告)日：2019-02-28

申请号：PCT/EP2018/071059

申请日：2018-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN WITTEVEEN, Koen ,  WANG, Wei-Chun ,  TURNER, Paul, Jonathan ,  MC NAMARA, Elliott, Gerard ,  MICELI, Giacomo

IPC: G03F7/20

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method comprises obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.