公开(公告)号：WO2019101447A1

公开(公告)日：2019-05-31

申请号：PCT/EP2018/078591

申请日：2018-10-18

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  THEEUWES, Thomas ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  SHAHRJERDY, Mir, Homayoun ,  DEN BOEF, Arie, Jeffrey ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：WO2017149009A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054761

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  VAN WITTEVEEN, Koen ,  ZAAL, Martijn, Maria ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

Abstract translation: 度量目标包括：布置成通过第一图案化工艺形成的第一结构; 以及布置成通过第二图案化工艺形成的第二结构，其中第一结构和/或第二结构不用于创建器件图案的功能方面，并且其中第一和第二结构一起形成一个或多个 单位单元，所述单位单元在标称物理配置处具有几何对称性，并且其中所述单位单元具有如下特征：由于所述第一图案化工艺中的图案布置的相对偏移，在与所述标称物理配置不同的物理配置下， 第二次构图工艺和/或其他图案化工艺，单元格中的不对称性。

公开(公告)号：WO2019038054A9

公开(公告)日：2019-02-28

申请号：PCT/EP2018/071059

申请日：2018-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN WITTEVEEN, Koen ,  WANG, Wei-Chun ,  TURNER, Paul, Jonathan ,  MC NAMARA, Elliott, Gerard ,  MICELI, Giacomo

IPC: G03F7/20

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method comprises obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

公开(公告)号：WO2017194289A1

公开(公告)日：2017-11-16

申请号：PCT/EP2017/059474

申请日：2017-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： CEKLI, Hakki, Ergun ,  ISHIBASHI, Masashi ,  VAN DE VEN, Wendy, Johanna, Martina ,  ROELOFS, Willem, Seine, Christian ,  MC NAMARA, Elliott, Gerard ,  RAHMAN, Rizvi ,  KUPERS, Michiel ,  SCHMITT-WEAVER, Emil, Peter ,  DELVIGNE, Erik, Henri, Adriaan

IPC: G03F7/20 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

Abstract: Measurements are obtained from locations across a substrate (W') before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of performance parameters such as overlay, after a pattern has been applied. A set of measurement locations (606, 606' or 606") is selected from among all possible measurement locations (302). At least a subset of the selected measurement locations are selected dynamically (202c), in response to measurements obtained using a preliminary selection (610) of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect of the disclosure, outlier measurements are detected based on supplementary data such as height measurements or historic data.

Abstract translation: 在执行光刻工艺步骤之前或之后，从衬底上的位置（W'）获得测量结果。 这种测量的例子包括在将图案施加到基底之前进行对准测量，以及在施加图案之后测量性能参数，例如覆盖。 从所有可能的测量位置（302）中选择一组测量位置（606,606'或606“）。 响应于使用测量位置的初步选择（610）获得的测量，动态地选择所选测量位置的至少一个子集（202c）。 可以使用高度的初步测量来选择用于对准的测量位置。 在本公开的另一方面中，基于诸如高度测量或历史数据的补充数据来检测异常值测量。

公开(公告)号：WO2020141049A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/084684

申请日：2019-12-11

Applicant: ASML NETHERLANDS B.V.

Inventor： REHMAN, Samee, Ur ,  TSIATMAS, Anagnostis ,  TARABRIN, Sergey ,  MC NAMARA, Elliott, Gerard ,  HINNEN, Paul, Christiaan

IPC: G03F7/20 ,  H01L21/66

Abstract: A method to calculate a model of a metrology process including receiving a multitude of SEM measurements of a parameter of a semiconductor process, receiving a multitude of optical measurements of the parameter of a semiconductor process, determining a model of a metrology process wherein the optical measurements of the parameter of semiconductor process are mapped to the SEM measurements of the parameter of the semiconductor process using a regression algorithm.

公开(公告)号：WO2020074261A1

公开(公告)日：2020-04-16

申请号：PCT/EP2019/075899

申请日：2019-09-25

Applicant: ASML NETHERLANDS B.V.

Inventor： GARCIA GRANDA, Miguel ,  MC NAMARA, Elliott, Gerard ,  GUITTET, Pierre-Yves, Jerome, Yvan ,  BROUWER, Eric, Jos, Anton ,  SEGERS, Bart, Peter, Bert

IPC: G03F7/20

Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.

公开(公告)号：WO2019052747A1

公开(公告)日：2019-03-21

申请号：PCT/EP2018/071498

申请日：2018-08-08

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DONGEN, Jeroen ,  MC NAMARA, Elliott, Gerard ,  HINNEN, Paul, Christiaan ,  JOCHEMSEN, Marinus

IPC: G03F7/20

Abstract: Methods of controlling a patterning process are disclosed. In one arrangement, tilt data resulting from a measurement of tilt in an etching path through a target layer of a structure on a substrate is obtained. The tilt represents a deviation in a direction of the etching path from a perpendicular to the plane of the target layer. The tilt data is used to control a patterning process used to form a pattern in a further layer.

公开(公告)号：WO2019038054A1

公开(公告)日：2019-02-28

申请号：PCT/EP2018/071059

申请日：2018-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN WITTEVEEN, Koen ,  WANG, Wei-Chun ,  TURNER, Paul, Jonathan ,  MC NAMARA, Elliott, Gerard ,  MICELI, Giacomo

IPC: G03F7/20

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method comprises obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

公开(公告)号：WO2019034409A1

公开(公告)日：2019-02-21

申请号：PCT/EP2018/070709

申请日：2018-07-31

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  MC NAMARA, Elliott, Gerard

IPC: G03F7/20

Abstract: A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.

公开(公告)号：WO2017148996A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054737

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

Abstract translation: 一种配置参数确定过程的方法，所述方法包括：获得结构的数学模型，所述数学模型被配置为预测用辐射束照射所述结构时的光学响应，并且所述结构具有 在标称物理配置下的几何对称性; 由硬件计算机系统使用数学模型来模拟特定量的结构的物理配置中的扰动以确定多个像素中的每一个中的光学响应的​​对应变化以获得多个像素灵敏度; 并且基于像素灵敏度，确定用于与基板上的结构的测量像素光学特性值组合的多个权重，以产生与物理配置中的变化相关联的参数的值，每个权重对应于像素。 p>