公开(公告)号：WO2019034409A1

公开(公告)日：2019-02-21

申请号：PCT/EP2018/070709

申请日：2018-07-31

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  MC NAMARA, Elliott, Gerard

IPC: G03F7/20

Abstract: A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.

公开(公告)号：WO2017148996A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054737

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

Abstract translation: 一种配置参数确定过程的方法，所述方法包括：获得结构的数学模型，所述数学模型被配置为预测用辐射束照射所述结构时的光学响应，并且所述结构具有 在标称物理配置下的几何对称性; 由硬件计算机系统使用数学模型来模拟特定量的结构的物理配置中的扰动以确定多个像素中的每一个中的光学响应的​​对应变化以获得多个像素灵敏度; 并且基于像素灵敏度，确定用于与基板上的结构的测量像素光学特性值组合的多个权重，以产生与物理配置中的变化相关联的参数的值，每个权重对应于像素。 p>

公开(公告)号：WO2017148986A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054719

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.

Abstract translation: 确定图案化过程的参数的方法，所述方法包括：获得在标称物理配置下由具有几何对称性的结构重新引导的辐射的检测到的表示，其中所检测到的辐射表示为 通过用辐射束照射衬底获得，使得衬底上的束斑填充有该结构; 以及由硬件计算机系统基于来自检测到的辐射表示的不对称光学特性分布部分中的光学特性值以比所检测到的辐射表示的另一部分更高的权重来确定图案化处理参数的值，所述不对称光学特性分布 由于结构的物理配置不同于名义物理配置。

公开(公告)号：WO2019158328A1

公开(公告)日：2019-08-22

申请号：PCT/EP2019/051618

申请日：2019-01-23

Applicant: ASML NETHERLANDS B.V.

Inventor： PANDEY, Nitesh ,  ZHOU, Zili ,  VAN DER ZOUW, Gerbrand ,  DEN BOEF, Arie ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan ,  VAN WEERT, Martinus, Hubertus, Maria ,  TSIATMAS, Anagnostis ,  WANG, Shu-jin ,  FAGGINGER AUER, Bastiaan, Onne ,  VERMA, Alok

IPC: G03F7/20

Abstract: A inspection apparatus, method, and system associated therewith are described herein. In a non-limiting embodiment, a inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, and the illumination beam being polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization; generate image data representing an image of each of the feature(s) based on the intensity data; and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

公开(公告)号：WO2019042726A1

公开(公告)日：2019-03-07

申请号：PCT/EP2018/071418

申请日：2018-08-07

Applicant: ASML NETHERLANDS B.V.

Inventor： VERMA, Alok ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas ,  TSIATMAS, Anagnostis ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A substrate comprising a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features, wherein the plurality of features comprise first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, and wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

公开(公告)号：WO2018086968A1

公开(公告)日：2018-05-17

申请号：PCT/EP2017/077914

申请日：2017-10-31

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  VERMA, Alok ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method comprises measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target comprises a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation comprises at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.

Abstract translation: 公开了一种测量器件制造工艺的参数的方法。 该方法包括通过用测量辐射照射目标并使用光学设备来检测由目标散射的测量辐射来测量衬底上的目标。 目标包括具有第一周期性分量和第二周期性分量的目标结构。 该光学设备接收来自目标结构的测量辐射的衍射所产生的辐射。 所接收的辐射包括将不从仅来自第一周期性成分的测量辐射的衍射接收的接收的至少一个衍射级，也不接收来自仅来自第二周期性成分的测量辐射的衍射。

公开(公告)号：WO2020141049A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/084684

申请日：2019-12-11

Applicant: ASML NETHERLANDS B.V.

Inventor： REHMAN, Samee, Ur ,  TSIATMAS, Anagnostis ,  TARABRIN, Sergey ,  MC NAMARA, Elliott, Gerard ,  HINNEN, Paul, Christiaan

IPC: G03F7/20 ,  H01L21/66

Abstract: A method to calculate a model of a metrology process including receiving a multitude of SEM measurements of a parameter of a semiconductor process, receiving a multitude of optical measurements of the parameter of a semiconductor process, determining a model of a metrology process wherein the optical measurements of the parameter of semiconductor process are mapped to the SEM measurements of the parameter of the semiconductor process using a regression algorithm.

公开(公告)号：WO2019149496A1

公开(公告)日：2019-08-08

申请号：PCT/EP2019/050561

申请日：2019-01-10

Applicant: ASML NETHERLANDS B.V.

Inventor： MEDVEDYEVA, Mariya, Vyacheslavivna ,  TSIATMAS, Anagnostis ,  CRAMER, Hugo, Augustinus, Joseph ,  VAN WEERT, Martinus, Hubertus, Maria ,  FAGGINGER AUER, Bastiaan, Onne ,  SHANG, Xiaoxin ,  VAN BOXMEER, Johan, Maria ,  VERSTRAETEN, Bert

IPC: G03F7/20 ,  G02B7/38

Abstract: Methods of determining an optimal focus height are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a target are obtained. Each application of the metrology process comprises illuminating the target with a radiation spot and detecting radiation redirected by the target. The applications of the metrology process include applications at different nominal focus heights. The measurement data comprises, for each application of the metrology process, at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method comprises determining an optimal focus height for the metrology process using the obtained measurement data.

公开(公告)号：WO2019081211A1

公开(公告)日：2019-05-02

申请号：PCT/EP2018/077594

申请日：2018-10-10

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHOU, Zili ,  VAN DER ZOUW, Gerbrand ,  PANDEY, Nitesh ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  VAN WEERT, Martinus, Hubertus, Maria ,  TSIATMAS, Anagnostis ,  TARABRIN, Sergey ,  BOS, Hilko, Dirk

IPC: G03F7/20 ,  G03F1/24

Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.

公开(公告)号：WO2017032736A1

公开(公告)日：2017-03-02

申请号：PCT/EP2016/069790

申请日：2016-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZHANG, Youping ,  SMILDE, Hendrik, Jan, Hidde ,  TSIATMAS, Anagnostis ,  VAN LEEST, Adriaan, Johan ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70491 ,  G01N21/47 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has first and second target structures formed thereon by a lithographic process, lithographic process comprising at least two lithographic steps. Each target structure has two-dimensional periodic structure formed in a single material layer, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount. An angle- resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构，光刻工艺包括至少两个光刻步骤。 每个目标结构具有形成在单个材料层中的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第一偏置量， 在第二目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第二偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理参数的测量 第一和第二目标结构。