METROLOGY METHOD AND APPARATUS, COMPUTER PROGRAM AND LITHOGRAPHIC SYSTEM
    3.
    发明申请
    METROLOGY METHOD AND APPARATUS, COMPUTER PROGRAM AND LITHOGRAPHIC SYSTEM 审中-公开
    计量方法与装置,计算机程序和计算机系统

    公开(公告)号:WO2016169901A1

    公开(公告)日:2016-10-27

    申请号:PCT/EP2016/058582

    申请日:2016-04-18

    CPC classification number: G03F7/70633 G01B11/24 G01B11/272

    Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

    Abstract translation: 公开了用于测量光刻工艺的参数的方法,计算机程序和相关联的装置。 该方法包括以下步骤:获得包括与多个第一结构相关的结构不对称性的测量的第一测量,所述多个测量结构不对称中的每一个对应于测量辐射的不同测量组合和至少第一参数的值 ; 获得与多个目标相关的目标不对称性的多个第二测量值,所述多个测量目标不对称中的每一个对应于所述不同测量组合之一,确定描述所述第一测量和所述第二测量之间的关系的关系函数, 对于每个所述测量组合; 根据所述关系函数确定校正的重叠值,所述校正重叠值由于至少所述第一结构中的结构不对称而被校正为结构贡献。

    SETUP AND CONTROL METHODS FOR A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUSES

    公开(公告)号:EP4250009A1

    公开(公告)日:2023-09-27

    申请号:EP22163435.5

    申请日:2022-03-22

    Abstract: Disclosed is a method for performing a lithographic apparatus setup calibration and/or drift correction for a specific lithographic apparatus of a population of lithographic apparatuses to be used in a manufacturing process for manufacturing an integrated circuit extending across a plurality of layers on a substrate. The method comprises determining a spatial error distribution of an apparatus parameter across spatial coordinates on the substrate for each lithographic apparatus of the population of lithographic apparatuses and/or each layer of the plurality of layers; determining a reference distribution by aggregating each of the spatial error distributions to optimize the reference distribution such that a spatial distribution of a parameter of interest of the manufacturing process is co-optimized across the population of lithographic apparatuses and/or plurality of layers; and using the reference distribution as a target distribution for the apparatus parameter for each lithographic apparatus and/or layer.

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