公开(公告)号：WO2020141140A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/087015

申请日：2019-12-24

Applicant: ASML NETHERLANDS B.V.

Inventor： MATHIJSSEN, Simon, Gijsbert, Josephus ,  NOOT, Marc, Johannes ,  BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie, Jeffrey ,  GRZELA, Grzegorz ,  DAVIS, Timothy, Dugan ,  ZWIER, Olger, Victor ,  HUIJGEN, Ralph, Timotheus ,  ENGBLOM, Peter, David ,  GEMMINK, Jan-Willem

IPC: G03F7/20 ,  G06T5/00 ,  G06T5/50

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：WO2019233738A1

公开(公告)日：2019-12-12

申请号：PCT/EP2019/062767

申请日：2019-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TRIPODI, Lorenzo ,  WARNAAR, Patrick ,  GRZELA, Grzegorz ,  HAJIAHMADI, Mohammadreza ,  FARHADZADEH, Farzad ,  TINNEMANS, Patricius, Aloysius Jacobus ,  MIDDLEBROOKS, Scott, Anderson ,  KOOPMAN, Adrianus, Cornelis, Matheus ,  STAALS, Frank ,  PETERSON, Brennan ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F7/20

Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

公开(公告)号：WO2019166190A1

公开(公告)日：2019-09-06

申请号：PCT/EP2019/052658

申请日：2019-02-04

Applicant: STICHTING VU ,  STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN ,  UNIVERSITEIT VAN AMSTERDAM ,  ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius, Aloysius, Jacobus ,  TENNER, Vasco, Tomas ,  DEN BOEF, Arie, Jeffrey ,  CRAMER, Hugo, Augustinus, Joseph ,  WARNAAR, Patrick ,  GRZELA, Grzegorz ,  JAK, Martin, Jacobus, Johan

IPC: G02B27/42 ,  G03F7/20 ,  G03H1/04 ,  G03H1/00

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

公开(公告)号：WO2018206227A1

公开(公告)日：2018-11-15

申请号：PCT/EP2018/059606

申请日：2018-04-13

Applicant: ASML NETHERLANDS B.V.

Inventor： BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  JAK, Martin, Jacobus, Johan ,  HAJIAHMADI, Mohammadreza ,  GRZELA, Grzegorz ,  MACHT, Lukasz, Jerzy

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G03F9/00

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As') are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

公开(公告)号：WO2019029933A1

公开(公告)日：2019-02-14

申请号：PCT/EP2018/068786

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  TINNEMANS, Patricius, Aloysius Jacobus ,  GRZELA, Grzegorz ,  MOS, Everhardus, Cornelis ,  TEL, Wim, Tjibbo ,  JOCHEMSEN, Marinus ,  SEGERS, Bart, Peter, Bert ,  STAALS, Frank

IPC: G03F7/20

Abstract: A method, includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distributions for use in design, control or modification of the patterning process.

公开(公告)号：WO2018108527A1

公开(公告)日：2018-06-21

申请号：PCT/EP2017/080770

申请日：2017-11-29

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  GRZELA, Grzegorz ,  KOOP, Erik, Johan ,  CALADO, Victor, Emanuel ,  ZENG, Si-Han

IPC: G03F7/20

Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured W t times, where W t is an integer greater than 2 so as to obtain N*W t measurement values; and determining R property values using Q equations and the N*W t measurement values, where R t ; wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.

公开(公告)号：EP3441819A1

公开(公告)日：2019-02-13

申请号：EP17185116.5

申请日：2017-08-07

Applicant: ASML Netherlands B.V.

Inventor： WARNAAR, Patrick ,  TINNEMANS, Patricius, Aloysius Jacobus ,  GRZELA, Grzegorz ,  MOS, Everhardus, Cornelis

IPC: G03F7/20

Abstract: A method, includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distributions for use in design, control or modification of the patterning process.

公开(公告)号：EP3336607A1

公开(公告)日：2018-06-20

申请号：EP16204764.1

申请日：2016-12-16

Applicant: ASML Netherlands B.V.

Inventor： WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  GRZELA, Grzegorz ,  KOOP, Erik Johan ,  CALADO, Victor Emanuel ,  ZENG, Si-Han

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G01N21/47 ,  G03F7/70633

Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising:
measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured W t times, where W t is an integer greater than 2 so as to obtain N*W t measurement values; and
determining R property values using Q equations and the N*W t measurement values, where R t ;
wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.